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    DIODE SCHOTTKY 1N5822 Search Results

    DIODE SCHOTTKY 1N5822 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SCHOTTKY 1N5822 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "Schottky Diode"

    Abstract: 1N5822 data sheet
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0055A Type1N5822 size55mils 55mils1 thickness12 038mm area44 padAnode48 characteristicsTa25 "Schottky Diode" 1N5822 data sheet

    DIODE 1N5822

    Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
    Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD, MIL-STD-202, DIODE 1N5822 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD, MIL-STD-202,

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 – 1N5822 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip     Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency


    Original     		PDF 1N5820 1N5822 DO-201AD, MIL-STD-202, DO-201AD

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821

    1N5822RL

    Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821

    1N5822

    Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820RL

    DIODE 1N5822

    Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier

    1N5822 PACKAGE

    Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5822 PACKAGE 1N5821 half wave rectifier LLC 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL

    FULL WAVE RECTIFIER CIRCUITS

    Abstract: schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5820 1N5821 1N5822
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original     		PDF 1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 FULL WAVE RECTIFIER CIRCUITS schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5821

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D

    1N5820

    Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820RL 1N5821 1N5821RL 1N5822RL

    1N5822

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D

    FULL WAVE bridge RECTIFIER CIRCUITS

    Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original     		PDF 1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 FULL WAVE bridge RECTIFIER CIRCUITS 1N5821 TP2050 1N5820-D Motorola 1N5820

    half bridge LLC inverter

    Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D half bridge LLC inverter diode 1n5822g 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    do-27

    Abstract: SR560 diode DIODE sk340 Diode SR160 SK540 SR590 SK340 sk550 SK560 SR380 diode
    Text: Axial Diode Series SCHOTTKY RECTIFIERS Maximum TYPE Peak Maximum Average Rectified Current at Reverse Half-wave Resistive load 50HZ Voltage Maximum Maximum Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Voltage at TA=25°C Package


    Original     		PDF 1N5817 DO-41 1N5818 1N5819 1N5820 DO-27 1N5821 do-27 SR560 diode DIODE sk340 Diode SR160 SK540 SR590 SK340 sk550 SK560 SR380 diode

    1N5822

    Abstract: No abstract text available
    Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,


    OCR Scan     		PDF b53T31 00EbT34 N5820ID/21ID/22ID OD84A 1N5820 1N5821 1N5822 1N5822

    n5822

    Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan     		PDF 1N5820/D 1N5820 1N5821 1N5822 1N5B22 n5822 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820

    1NS820

    Abstract: No abstract text available
    Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide


    OCR Scan     		PDF 1N5820 1N5821 1N5822 1NS820 1N5822