IR0J
Abstract: MBR330P IN5822 MBR320P schottky rectifier motorola mbr 1N5820 1N5821 1N5822 MBR340P MBR320P-340P
Text: 1NS820 MBR320P 1N5821 MBR330P 1N5822 MBR340P MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA D e s ig n e r s D a ta . S h e e t S C H O T T K Y B A R R IE R A X IA L L E A D R E C T IF IE R S R E C T IF IE R S . . . e m p lo y in g th e S c h o ttk y B a rrie r p rin c ip le in a large area m e ta l-to -s ilic o n
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1NS820
Abstract: No abstract text available
Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
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1N5820
1N5821
1N5822
1NS820
1N5822
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1NS821
Abstract: 1NS820 1NS822
Text: 1N5820 THRU 1N5822 HIGH CURRENT SCHOTTKY BARRIER RECTIFIERS VOLTAGE-2 0 to 40 Volts CURRENT• 3.0 Amperes FEATURES ♦ Low cost ♦ Plastic package has Underwriters Laboratory Flammability Classificaiton 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction
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1N5820
1N5822
DO-201
210t5
1NS821
1NS820
1NS822
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Untitled
Abstract: No abstract text available
Text: Ek MOSPEC 1N5820 thru 1N5822 Schottky Barrier Rectifiers S C H O T T K Y B A R R IE R R E C T IF IE R S Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.
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1N5820
1N5822
1N5821
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1N5820
Abstract: 1N5821 1N5822
Text: Bk MOSPEC 1N5820 thru 1N5822 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.
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1N5820
1N5822
1N5821
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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1NS822
Abstract: 1NS820 DIODE SD51
Text: iGm itronicr discrete devices hot line TOLL FREE NUMBER 800-777-3960 POWER SCHOTTKY RECTIFIERS 1A, Up to 40V 1N5817 1N5818 1N5819 * JED EC registered values Note 2: Pulse width = 300ns; duty cycle « 2 % ELECTRICAL CHARACTERISTIC Ti = 25°C unless noted *
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1N5817
1N5818
1N5819
300ns;
1N5819
1N5820
1N5821
1N5822
1NS822
1NS820
DIODE SD51
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THERMISTORS nsp 037
Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.
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200X300X360m
THERMISTORS nsp 037
Thyristor TAG 9118
ICA 0726 0148 Transformer
a1273 y k transistor
AM97C11CN
transistor SK A1104
PM7A2Q
B8708
bzy79
yh 5032
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do215ab
Abstract: DO-214AB 1N5822 DO214AA 1n5822 do 214ab 1n5822 sm 1n5822 sk34 DO214-AB do214ab
Text: Schottky Rectifiers Package Outline Chatsworth Chatsworth Chatsworth Colorado Colorado Colorado Colorado Colorado Chatsworth Chatsworth Chatsworth Colorado Colorado Colorado Colorado Chatsworth Chatsworth Chatsworth Colorado Colorado Colorado Chatsworth Chatsworth
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DL-41
DO-214AA
DO-41
DO-213AB
DO-215AB
DO-214AC
do215ab
DO-214AB
1N5822 DO214AA
1n5822 do 214ab
1n5822 sm
1n5822 sk34
DO214-AB
do214ab
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