40427
Abstract: SUD70N03-06P
Text: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)
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SUD70N03-06P
O-252
S-40427--Rev.
15-Mar-04
40427
SUD70N03-06P
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Si3441BDV
Abstract: Si3441BDV-T1
Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1
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Si3441BDV
Si3441BDV-T1
Si3441BDV-T1--E3
S-40424--Rev.
15-Mar-04
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SUD50N03-16P
Abstract: No abstract text available
Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab
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SUD50N03-16P
O-252
SUD50N03-16P--E3
S-40466--Rev.
15-Mar-04
SUD50N03-16P
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136B
Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V
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SUM47N10-24L
O-263
SUM47N10-24L--E3
S-40434--Rev.
15-Mar-04
136B
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Si3447BDV
Abstract: Si3447BDV-T1 72020
Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance
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Si3447BDV
Si3447BDV-T1
Si3447BDV-T1--E3
S-40424--Rev.
15-Mar-04
72020
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Untitled
Abstract: No abstract text available
Text: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)
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SUD70N03-06P
O-252
SUD70N03-06P
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V
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SUM47N10-24L
O-263
SUM47N10-24L--E3
08-Apr-05
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SUD50N03-16P
Abstract: No abstract text available
Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab
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SUD50N03-16P
O-252
SUD50N03-16P--E3
08-Apr-05
SUD50N03-16P
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Si3447BDV
Abstract: 1600 v mosfet ultra low igss pA Si3447BDV-T1
Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance
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Si3447BDV
Si3447BDV-T1
Si3447BDV-T1--E3
08-Apr-05
1600 v mosfet
ultra low igss pA
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Si3441BDV
Abstract: Si3441BDV-T1
Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1
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Si3441BDV
Si3441BDV-T1
Si3441BDV-T1--E3
08-Apr-05
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Si3441BDV
Abstract: Si3441BDV-T1
Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1
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Si3441BDV
Si3441BDV-T1
Si3441BDV-T1--E3
18-Jul-08
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SUD50N03-16P
Abstract: No abstract text available
Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab
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SUD50N03-16P
O-252
SUD50N03-16P--E3
18-Jul-08
SUD50N03-16P
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Si3447BDV
Abstract: No abstract text available
Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance
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Si3447BDV
Si3447BDV-T1
Si3447BDV-T1--E3
18-Jul-08
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SUD70N03-06P
Abstract: No abstract text available
Text: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)
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SUD70N03-06P
O-252
18-Jul-08
SUD70N03-06P
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Si3454ADV
Abstract: Si3454ADV-T1
Text: Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.5 0.085 @ VGS = 4.5 V 3.8 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 3 mm 1 6 2 5 3 4 (3) G 2.85 mm
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Si3454ADV
Si3454ADV-T1
Si3454ADV-T1--E3
S-40424--Rev.
15-Mar-04
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Si3455ADV
Abstract: Si3455ADV-T1
Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)
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Si3455ADV
Si3455ADV-T1
Si3455ADV-T1--E3
S-40424--Rev.
15-Mar-04
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Si4348DY
Abstract: No abstract text available
Text: Si4348DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Gen II Power MOSFET APPLICATIONS PRODUCT SUMMARY VDS (V) 30 D High-Side DC/DC Conversion − Notebook − Desktop − Server D Notebook Logic DC/DC, Low-Side ID (A) rDS(on) (W)
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Si4348DY
Si4348DY--E3
Si4348DY-T1--E3
S-40438--Rev.
15-Mar-04
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Si3442BDV
Abstract: Si3442BDV-T1 72504
Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3
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Si3442BDV
Si3442BDV-T1--E3
S-40424--Rev.
15-Mar-04
Si3442BDV-T1
72504
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Si4463BDY-E3
Abstract: Si4463BDY
Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
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Si4463BDY
Si4463BDY--E3
Si4463BDY-T1--E3
S-40433--Rev.
15-Mar-04
Si4463BDY-E3
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Si3457BDV
Abstract: Si3457BDV-T1
Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.100 @ VGS = −4.5 V −3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3457BDV-T1
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Si3457BDV
Si3457BDV-T1
Si3457BDV-T1--E3
S-40424--Rev.
15-Mar-04
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Si6963BDQ
Abstract: 7277-2
Text: Si6963BDQ Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −3.9 0.080 @ VGS = −2.5 V −3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6963BDQ G1 8 D2 7 S2 G2 6 S2 5 G2
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Si6963BDQ
Si6963BDQ-T1--E3
S-40439--Rev.
15-Mar-04
7277-2
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40410
Abstract: 40410 datasheet Si3465DV MARKING code 5C
Text: Si3465DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.080 @ VGS = −10 V −4.0 0.170 @ VGS = −4.5 V −2.7 APPLICATIONS D Load Switch − Notebook PC − Game Machine
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Si3465DV
Si3465DV-T1--E3
S-40410--Rev.
15-Mar-04
40410
40410 datasheet
MARKING code 5C
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Si3456BDV
Abstract: Si3456BDV-T1 SI3456
Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.0 0.052 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm
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Si3456BDV
Si3456BDV-T1--E3
S-404024--Rev.
15-Mar-04
Si3456BDV-T1
SI3456
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SI4384DY-E3
Abstract: SI4384DY-T1-E3 Si4384DY
Text: Si4384DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFETS D PWM Optimized D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V 15 0.0125 @ VGS = 4.5 V 12 APPLICATIONS
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Si4384DY
Si4384DY--E3
Si4384DY-T1--E3
S-40440--Rev.
15-Mar-04
SI4384DY-E3
SI4384DY-T1-E3
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