SI3447BDV Search Results

Si3447DV-T1

Abstract: Si3447BDV Si3447BDV-T1 Si3447BDV-T1-E3 Si3447DV
Contextual Info: Specification Comparison Vishay Siliconix Si3447BDV vs. Si3447DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3447BDV-T1 Replaces Si3447DV-T1 Si3447BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3447DV-T1

Si3447BDV

Contextual Info: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition

Si3447BDV

Abstract: 1600 v mosfet ultra low igss pA Si3447BDV-T1
Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance

Si3447BDV

Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance

7812

Abstract: 9583 AN609 Si3447BDV
Contextual Info: Si3447BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3447BDV

Abstract: Si3447BDV-T1 72020
Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance

Si3447BDV

Contextual Info: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3447BDV

Abstract: Si3447BDV-T1 Si3447BDV-T1-E3 SI3447CDV
Contextual Info: Specification Comparison Vishay Siliconix Si3447CDV vs. Si3447BDV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3447CDV-T1-E3 replaces Si3447BDV-T1-E3 Si3447CDV-T1-E3 replaces Si3447BDV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si3447BDV

Contextual Info: Si3447BDV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.040 @ VGS = -4.5 V -6.0 0.053 @ VGS = -2.5 V - 5.2 0.072 @ VGS = -1.8 V - 4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance

Si3447BDV

Contextual Info: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TSOP 6 marking 52

Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition

Si3447BDV

Abstract: Si3447BDV-T1-E3
Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

FDW2520C

Abstract: LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8
Contextual Info: LTC3736-2 Dual 2-Phase, No RSENSE , Synchronous Controller with Output Tracking DESCRIPTION TM FEATURES n n n n n n n n n n n n n n n n No Current Sense Resistors Required Out-of-Phase Controllers Reduce Required Input Capacitance Tracking Function Wide VIN Range: 2.75V to 9.8V

4TPB150MC

Abstract: IHLP-2525CZ-01 LTC3809 LTC3809EDD MBRM120L Si7540DP 5 pin pulse transformer
Contextual Info: LTC3809 No RSENSETM, Low EMI, Synchronous DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No Current Sense Resistor Required Selectable Spread Spectrum Frequency Modulation for Low Noise Operation Constant Frequency Current Mode Operation for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

CORE F5A

Abstract: list of P channel power mosfet LTC3809-1 LTC3809EDD-1 LTC3809EMSE-1 3809-1
Contextual Info: LTC3809-1 No RSENSETM, Low Input Voltage, Synchronous DC/DC Controller with Output Tracking FEATURES DESCRIPTION n The LTC 3809-1 is a synchronous step-down switching regulator controller that drives external complementary power MOSFETs using few external components. The