DIODE S1M Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

DIODE K9

Contextual Info: S1A.S1M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /3 Surface mount diode Standard silicon rectifier diodes S1A.S1M  3

Contextual Info: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The S1M-20ST is a GaAs infrared light em itting diode housed in clear plastic. Side em ission with a <f> 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

S1m diode

Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
Contextual Info: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss

1000C

Abstract: 2600C
Contextual Info: S1A thru S1M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 1.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

Contextual Info: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak

Contextual Info: S1A THRU S1M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l l l l l l l SMB/DO-214AA For surface mounted applications High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

S1m diode

Abstract: JEDEC DO-214AA 100 Amp current 1000 volt diode diode S1G diode s1g sma DO-214AA diode JEDEC DO-214AA diode
Contextual Info: S1A THRU S1M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES SMA/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers l Glass passivated junction

S1m diode

Contextual Info: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

B340A-13-F

Abstract: B350B-13-F B340B-13-F B530C-13-F B230A-13-F diode S1J mark S1G R2 diode s1m sma B190 B340B-13
Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: July 15, 2005 July 15, 2004 Alert Category: Discrete Semiconductor DCS/PCN-1042 Alert Type: PCN #: Assembly & Test Site DCS/PCN-1042 TITLE Qualification of Assembly and Test Site for Schottky and Standard Recovery GP Rectifier Diode

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

S1A.S1M

Contextual Info: S1A.S1M /3 Surface mount diode Standard silicon rectifier diodes S1A.S1M Forward Current: 1 A Reverse Voltage: 50 to 1000 V  3   0 9  :  4  :  : , %,  4  :  : ,   8 : , /7 5 2  16 5 *- & #9% # 2 * 

transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Contextual Info: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also

Contextual Info: SCHOTTKY BARRIER DIODE KCQ60A04 goaA ov FEATURES 4.7Ç185 ^ “ 5.7 224) 5.3(208) ^ 15.9j.626) :/H Ì5 3 5 o Similar to TO-247AC (TO-3P) Case oD ual Diodes-Cathode Common < - T~ y y î 20.3(.800) T57(7755 v 4.31.169) 3.7U45) l o Low Forward Voltage Drop oLow Power Loss, High Efficiency

Contextual Info: S1A.S1M /3 Surface mount diode Standard silicon rectifier diodes S1A.S1M  3   0 1 3) 4) 16 5 * &- /7 5 2  /& 5 2  *-* $ * /& 5 2 -   8   Values Units  : , 8   - 9$  - // 5 *  * & 9  :  4 

Contextual Info: S1A.S1M /3 Surface mount diode Standard silicon rectifier diodes S1A.S1M  3   0 1 3) 4) 16 5 * &- /7 5 2  /& 5 2  *-* $ * / 5 2 -   8   Values Units  : , 8   - 9$  - // 5 *  * & 9  :  4