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    DIODE RGP 15 G Search Results

    DIODE RGP 15 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RGP 15 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode RGP 30

    Abstract: diode RGP 20 diode RGP 15 G cost of logic pulser HV7331 D2641
    Text: Supertex inc. HV7331 Four Channel, High Speed ±70V 2.0A Ultrasound RTZ Pulser Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► General Description HVCMOS technology for high performance High density integrated ultrasound transmitter


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    PDF 20MHz HV7331 HV7331 DSFP-HV7331 A022812 diode RGP 30 diode RGP 20 diode RGP 15 G cost of logic pulser D2641

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50


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    PDF AN-10B: AN-10A Nov-2011. GA06JT12-247

    diode RGP 20

    Abstract: d2641 cost of logic pulser DSFP-HV7331 diode RGP 30
    Text: Supertex inc. HV7331 Four Channel, High Speed ±70V 2.0A Ultrasound RTZ Pulser Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► General Description HVCMOS technology for high performance High density integrated ultrasound transmitter


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    PDF 20MHz HV7331 HV7331 DSFP-HV7331 A070512 diode RGP 20 d2641 cost of logic pulser diode RGP 30

    10mhz mosfet

    Abstract: jedec package MO-220 vmmd4
    Text: Supertex inc. HV7331 Four Channel, High Speed ±70V 2.0A Ultrasound RTZ Pulser Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► General Description HVCMOS technology for high performance High density integrated ultrasound transmitter


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    PDF 20MHz HV7331 HV7331 DSFP-HV7331 B011513 10mhz mosfet jedec package MO-220 vmmd4

    p950003

    Abstract: aasupreme aasupreme P950003 TG-UTB ESMIT 4180 UTB01543S tg-utb01543s 4181 sumida 73M1912 AASUPREM
    Text: A Maxim Integrated Products Brand 73M1822/73M1922 MicroDAA with PCM Highway APPLICATION NOTE AN_1x22_018 October 2009 73M1822/73M1922 Schematic and Layout Guidelines Introduction This application note provides layout recommendations that should be followed when integrating the 73M1822


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    PDF 73M1822/73M1922 73M1822/73M1922 73M1822 73M1922 73M1x22 73M1822 73M1922. 73M1822. p950003 aasupreme aasupreme P950003 TG-UTB ESMIT 4180 UTB01543S tg-utb01543s 4181 sumida 73M1912 AASUPREM

    P3100SBRP

    Abstract: 73M1912 BCP56 HD04 MMBTA06 MMBTA42 MMSZ4710T1 TRF600-150 tvs 200V Zener Diode TVS P3100SBRP
    Text: 73M1x66B/73M1x22 Low Voltage Transient Protection A Maxim Integrated Products Brand APPLICATION NOTE AN_1x66B_1x22_059 April 2010 Introduction This application note provides guidance on circuit protection from voltage transients that are below the level protected by the normal higher voltage and current protection.


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    PDF 73M1x66B/73M1x22 773M1x66B/73M1x22 P3100SBRP 73M1912 BCP56 HD04 MMBTA06 MMBTA42 MMSZ4710T1 TRF600-150 tvs 200V Zener Diode TVS P3100SBRP

    Untitled

    Abstract: No abstract text available
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


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    PDF ONET4291VA SLLS674 20-Pin ONET4291VA

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    PDF GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    PDF GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


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    PDF ONET4291VA SLLS674 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: RT7304 Primary-Side-Regulation LED Driver Controller with Active PFC General Description Features The RT7304 is a constant current LED driver with active power factor correction. It supports high power factor across a wide range of line voltages, and it drives the


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    PDF RT7304 RT7304 DS7304-03

    p950003

    Abstract: aasupreme ESMIT 4180 aasupreme P950003 73M1906 73M1966B tg-utb01543s 4181 sumida 73M1916-20 UTB01543S
    Text: A Maxim Integrated Products Brand 73M1866B/73M1966B MicroDAA with PCM Highway APPLICATION NOTE AN_1x66B_003 October 2009 73M1866B/73M1966B Schematic and Layout Guidelines Introduction This application note provides layout recommendations that must be followed when integrating the 73M1866B


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    PDF 73M1866B/73M1966B 73M1866B/73M1966B 73M1866B 73M1966B 73M1x66B 73M1866B 73M1966B. p950003 aasupreme ESMIT 4180 aasupreme P950003 73M1906 tg-utb01543s 4181 sumida 73M1916-20 UTB01543S

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    PDF GA50SICP12-227 OT-227 Redu50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: RT7302 Primary-Side-Regulation Dimmable LED Driver Controller with Active PFC General Description Features The RT7302 is a constant current LED driver with active power factor correction. It supports high power factor across a wide range of line voltages, and it drives the


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    PDF RT7302 RT7302 DS7302-02

    Untitled

    Abstract: No abstract text available
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


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    PDF ONET4291VA SLLS674 20-Pin ONET4291VA

    BLM15HG102SN1

    Abstract: ONET4192VA ONET4291VA
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


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    PDF ONET4291VA SLLS674 20-Pin ONET42 BLM15HG102SN1 ONET4192VA ONET4291VA

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    PDF GA50SICP12-227 OT-227 ReducedGA50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    PDF GA100SICP12-227 OT-227 Reduc00SIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    diode RGP 20

    Abstract: No abstract text available
    Text: DRV8662 www.ti.com SLOS709A – JUNE 2011 – REVISED NOVEMBER 2012 Piezo Haptic Driver with Integrated Boost Converter Check for Samples: DRV8662 FEATURES DESCRIPTION • The DRV8662 is a single-chip piezo haptic driver with integrated 105 V boost switch, integrated power


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    PDF DRV8662 SLOS709A DRV8662 diode RGP 20

    Untitled

    Abstract: No abstract text available
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


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    PDF ONET4291VA SLLS674 20-Pin ONET4291VA

    BLM15HG102SN1

    Abstract: ONET4192VA ONET4291VA
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


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    PDF ONET4291VA SLLS674 20-Pin ONET42om BLM15HG102SN1 ONET4192VA ONET4291VA

    diode RGP 30

    Abstract: No abstract text available
    Text: ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current


    Original
    PDF ONET4291VA SLLS674 20-Pin ONET4291VA diode RGP 30

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    PDF GA100SICP12-227 OT-227 ReSIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    rgp30

    Abstract: diode RGP 20
    Text: BY 396.BY 399, RGP 30 K .M Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 100. 1000 V /4.5iai Plastic case Kunststoffgehäuse ~ D0-201 Weight approx.


    OCR Scan
    PDF D0-201 UL94V-0 R0D1RS14 rgp30 diode RGP 20