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    DIODE PH Search Results

    DIODE PH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE PH Price and Stock

    Phoenix Contact UNO-DIODE/5-24DC/2X10/1X20

    Redundancy module - 5 V - 24 V DC - 2 x 10 A - 1 x 20 A.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UNO-DIODE/5-24DC/2X10/1X20 36
    • 1 $76.35
    • 10 $67.63
    • 100 $61.24
    • 1000 $59.17
    • 10000 $59.17
    Buy Now

    Phoenix Contact TRIO2-DIODE/12-24DC/2X20/1

    Redundancy module, 12 V - 24 V DC, 2 x 20 A, 1 x 40 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TRIO2-DIODE/12-24DC/2X20/1 30
    • 1 $130.85
    • 10 $109.63
    • 100 $102.22
    • 1000 $102.22
    • 10000 $102.22
    Buy Now

    Phoenix Contact QUINT-DIODE/12-24DC/2X20/1

    Diode Redundancy Module - QUINT-DIODE/12-24DC/2X20/1X40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com QUINT-DIODE/12-24DC/2X20/1 22
    • 1 $178.86
    • 10 $166.93
    • 100 $162.6
    • 1000 $162.6
    • 10000 $162.6
    Buy Now

    Phoenix Contact TRIO-DIODE/12-24DC/2X10/1X

    Redundancy Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TRIO-DIODE/12-24DC/2X10/1X 13
    • 1 $123.8
    • 10 $103.73
    • 100 $98.19
    • 1000 $96.72
    • 10000 $96.72
    Buy Now

    Phoenix Contact STEP-DIODE/5-24DC/2X5/1X10

    Redundancy module - 5 ... 24 V DC - 2x 5 A - 1x 10 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STEP-DIODE/5-24DC/2X5/1X10 10
    • 1 $71.29
    • 10 $63.15
    • 100 $57.18
    • 1000 $55.25
    • 10000 $55.25
    Buy Now

    DIODE PH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor a1001

    Abstract: 4 PC blue Laser-Diode la0225 405nm laser
    Text: Ordering number : ENA1001A PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm


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    PDF ENA1001A LA0225CS LA0225CS A1001-4/4 transistor a1001 4 PC blue Laser-Diode la0225 405nm laser

    BAS40L

    Abstract: marking code s6 SOD-882L
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


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    PDF M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L

    marking hz SOD-323

    Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
    Text: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.


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    PDF BAR63J OD-323 OD-323 marking hz SOD-323 diode sod 106 BAR63J BAS70-07 SOD Package

    IDG 600

    Abstract: M61880FP 20P2N-A M61880
    Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.


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    PDF M61880FP REJ03F0068-0100Z M61880FP IDG 600 20P2N-A M61880

    SMD MARKING 541 DIODE

    Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
    Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF


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    PDF M3D178 BA792 MAM139 OD110) OD110 SCDS47 113061/1100/01/pp8 SMD MARKING 541 DIODE smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777

    NX7300BA-CC

    Abstract: NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
    Text: DATA SHEET LASER DIODE NX7300BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX7300BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.


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    PDF NX7300BA-CC NX7300BA-CC STM-16 NX7301BA-CC NX7302BA-CC NX7303BA-CC

    S3 DIODE schottky

    Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882


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    PDF M3D891 BAT54L OD882 MDB391 SCA75 613514/01/pp8 S3 DIODE schottky SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882

    marking code k1

    Abstract: BAP51-02 smd marking KM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance


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    PDF M3D319 BAP51-02 OD523 MAM405 OD523) 613514/02/pp8 marking code k1 BAP51-02 smd marking KM

    "MARKING CODE M1"

    Abstract: BAP27-01 diode marking m1 s21 diode marking code M1 MAM405 SOD723A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP27-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode BAP27-01 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance


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    PDF M3D319 BAP27-01 OD723A MAM405 OD723A) SCA73 125004/00/02/pp7 "MARKING CODE M1" BAP27-01 diode marking m1 s21 diode marking code M1 MAM405 SOD723A

    Untitled

    Abstract: No abstract text available
    Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.


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    PDF 1N5408

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD


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    PDF M3D319 1PS79SB10 SC-79 MAM403 SC-79) SCA60 115104/00/01/pp8

    "Current to Voltage Converter"

    Abstract: SCPI-1995 nanosecond pulsed led EN61326-1 current to voltage converter MIL-PRF-28800F class 4 2520S
    Text: Complete pulse test of laser diode bars and chips with dual photocurrent measurement channels OPTOELECTRONIC TEST SOLUTIONS Pulsed Laser Diode Test System 2520 The new Model 2520 Pulsed Laser Diode Test System is an integrated, synchronized system for testing laser


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    PDF 500ns. 89/336/EEC EN61326-1. MIL-PRF-28800F 238mm 416mm 70lbs) 168mm 241mm 50E-06 "Current to Voltage Converter" SCPI-1995 nanosecond pulsed led EN61326-1 current to voltage converter MIL-PRF-28800F class 4 2520S

    Untitled

    Abstract: No abstract text available
    Text: [ UTZ-SC0334_3 ] 2013/10/16 Ultra Violet Laser Diode NDU4316E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 390-400nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm (


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    PDF UTZ-SC0334 NDU4316E CW120mW 390-400nm

    1PS59SB20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection


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    PDF M3D114 1PS59SB20 SC-59 MLC357 MSA314 SCA60 115104/00/01/pp8 1PS59SB20

    PDF PIN APD DIODE DESCRIPTION

    Abstract: NDL5531P NDL5531P1 NDL5531P1C NDL5531P1D NDL5531P2 NDL5531P2C NDL5531PC NDL5531PD nec 2501 m
    Text: DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors


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    PDF NDL5531P SM-9/125) PDF PIN APD DIODE DESCRIPTION NDL5531P1 NDL5531P1C NDL5531P1D NDL5531P2 NDL5531P2C NDL5531PC NDL5531PD nec 2501 m

    NDL5422P

    Abstract: NDL5471R NDL5471RC NDL5471RD
    Text: DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long


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    PDF NDL5471R NDL5471RC NDL5471RD NDL5422P NDL5471RC NDL5471RD

    Emcore solar cell

    Abstract: ATJ photovoltaic cell solar cell "PHOTOVOLTAIC CELL" triple-junction "solar cell" diode cell EMCORE ATJ
    Text: BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications SPACE PHOTOVOLTAICS 28% Minimum Average Efficiency Features & Characteristics „ Highest efficiency flight cell with monolithic diode in the market „ Triple-Junction with Monolithic Diode BTJM InGaP/InGaAs/Ge Solar


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    PDF EWRP036 AS9100 Emcore solar cell ATJ photovoltaic cell solar cell "PHOTOVOLTAIC CELL" triple-junction "solar cell" diode cell EMCORE ATJ

    1842m

    Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
    Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser


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    PDF 200mA 400mA Aug-05 29-Sep-09 LDD200P-00400-A 1842m DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NR6300EZ φ 30 m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES • Small dark current ID = 5 nA • Small terminal capacitance


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    PDF NR6300EZ NR6300EZ

    Untitled

    Abstract: No abstract text available
    Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor


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    ADB13

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.


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    PDF NDL7001 NDL7001 LC-2298) ADB13

    SCHOTKY

    Abstract: 6RI30E 100X2 2RI100E 2RI60E 6RI100E 6RI100G 6RI30G 6RI50E 6RI75E
    Text: Diode Modules Ratings and Characteristics Type Schematic Diagram — 3 Phase Diode Bridge Rectifier Diode Module 6 Chips in Bridge Insulated Type Part Number o O- Rated Current Surge Current Junction Temp. Insulation Voltage Forward Voltage V (A) (A)


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    PDF 6RI30E 6RI50E 6RI75E 6RI100E 6RI30G 6RI75G 6RI100G 2-E54 DD20HQ SCHOTKY 100X2 2RI100E 2RI60E 6RI100E 6RI100G 6RI50E 6RI75E

    diode in 5401

    Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
    Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages


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    PDF TIED87, TIED88, X10-3 poss75042 SJ4IIL230) JL3110209) 0L19O) diode in 5401 for APD bias high-voltage 104 Ceramic Disc Capacitors 100v

    BAS32

    Abstract: diode bas32 IEC134 BAS32 sod80
    Text: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat


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    PDF 711002b 00533bt. BAS32 T-03-09 diode bas32 IEC134 BAS32 sod80