DIODE ON SEMICONDUCTOR Search Results

to-can

Abstract: laser diode submount 650nm 5mw laser laser diode chip 650NM laser diode 5mw DIODE CHIP
Contextual Info: U-CS-6505021 UNION OPTRONICS CORP. 650nm Laser Diode chip on Submount 650nm Red Laser Diode Chip on Submount U-CS-6505021 Descriptions Features 650nm Laser Diode Chip on Submount Un-cooled Laser chip on submount with MQW structure Gold coated copper submount

Contextual Info: TSHF5400 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

BAW56LT1

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

Contextual Info: TSHF5400 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted plastic

TSHF5200

Contextual Info: TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted

BAW56LT1

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

W66ESF002X13

Abstract: generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099
Contextual Info: APPLICATION NOTE Diode modulator for linear zoom. AN96099 Philips Semiconductors Diode modulator for linear zoom. Application Note AN96099 Abstract A short description is given on the existing diode modulator functioning and the changes which have to be made

MMBD7000LT1

Abstract: M5C 3 leads
Contextual Info: ON Semiconductort Dual Switching Diode MMBD7000LT1 ON Semiconductor Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol

TSHF5400

Contextual Info: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: TSHF5200 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted

Contextual Info: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

TSAL7600

Contextual Info: TSAL7600 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs

Contextual Info: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: Ordering number : EN774E ON Semiconductor DATA SHEET SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features • • • The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology.

Contextual Info: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package 94 8390 Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

TSAL5300

Contextual Info: TSAL5300 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

TSAL7400

Abstract: diode SR 310
Contextual Info: TSAL7400 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs

TSHF5400

Contextual Info: TSHF5400 Vishay Semiconductors ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

BAS116LT1

Abstract: BAS116LT3
Contextual Info: ON Semiconductort Switching Diode BAS116LT1 This switching diode has the following features: ON Semiconductor Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel

TSAL7300

Contextual Info: TSAL7300 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs

solder joint

Abstract: PNC0106A stencil tension
Contextual Info: AND8455/D Board Level Application Note for SOD-923 Two Pin Diode Package Prepared by: Steve St. Germain ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction Board Mounting Process ON Semiconductor’s SOD-923 represents the latest in small surface mount two pin Diode package technology.