c 10 ph diode
Abstract: C 15 PH diode f 9222 l GL710
Text: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER
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GL710
CHARACTERISTICS4-7710
SMT98136
c 10 ph diode
C 15 PH diode
f 9222 l
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c 10 ph diode
Abstract: GL710
Text: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER
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GL710
SMT98136
c 10 ph diode
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c5411
Abstract: c5411 transistor S2000N equivalent 2SC5570 equivalent S2055N equivalent 2SD1555 equivalent c5411 equivalent S2055AF equivalent 2SD2539 equivalent 2SD2499 equivalent
Text: Horizontal-Deflection Output Transistors PRODUCT GUIDE Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density
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SG10LC20USM
Abstract: fast recovery diode low voltage FT0220G
Text: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A
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SG10LC20USM
FT0220G
J533-1
CJ533-1
SG10LC20USM
fast recovery diode low voltage
FT0220G
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Untitled
Abstract: No abstract text available
Text: i t f - K Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS D1NL40 Case : 0.6 / ¿2.6* 400V 0.9A =E= O ' •trr5 0 n s e -w T ! Cathode : Anode ^ Cathode band s K ^ E n a s fflia M arking •S R B S •7 'J -T ft-iJ L / L4 • S S . OA, S§B£
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D1NL40
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode W tm D5S9M OUTLINE 90V 5A Feature • Tj=150°C • Tj= 1 5 0°C • P rrsm • 71 [ Æ - J U K Rating • Full M o ld e d Main Use • S w itc h in g R eg u lator • DC/DC □ V A'—^ • D C /D C C o n ve rte r •mm, i f - A .oA d gg
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waveii50Hz
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DBA100G
Abstract: DBA100 DBA100C
Text: Ordering num ber: EN 651D DBAIOO N0.651D Diffused Junction Silicon Diode SAVYO i 10.OA Single-Phase Bridge Rectifier F e a tu re s • Plastic molded structure • Glass passivation for high reliability •Peak reverse voltage : Vrm = 200, 600V • Average rectified c u rren t: I q = 10.0A
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DBA100
DBA100C
DBA100G
DBA100
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FAJ 40
Abstract: aba diode 15X15 SC017-2 SC017-4 T460 r930 Diode FAJ ABA SURFACE MOUNT T3B diode
Text: S C O I 7 1 .OA : Outline Drawings GENERAL USE RECTIFIER DIODE * Features • 04 it ' J ESD-Proof I 12*“ m Surface m ount device i/jv : Marking High reliability •Applications Be General purpose rectifier applications □ □ » A utom obile use t>'J —h'7-ÿ
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-TeilS19^
I95t/R89)
FAJ 40
aba diode
15X15
SC017-2
SC017-4
T460
r930
Diode FAJ
ABA SURFACE MOUNT
T3B diode
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S3LU
Abstract: S3L20 DIODE s3LU SHINDENGEN DIODE
Text: y*v\ U tlpe Super Past Recovery Diode =r— k Axial Diode OUTLINE DIMENSIONS S3L20U Case : t.4 ^ i 4.4 -n i 200V 3A •fiy-rx T }°- > © # trr3 5 n s ffl 'C o l o r c o d e fH c il) i* * & E P E iB M [2 l • s h s ;s Marking OA, mm •a « . s«, fa
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S3L20U
S3LU
S3L20
DIODE s3LU
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: 1989963 CENTRAL SEMICONDUCTOR D 0 Baef0 B ^ETrôCG®GadI®SÊ F Ê @ E ~ P nflT1b3 61C 00274 T-V/W/ H T 1IÏM 337 OA THRU 1N4372A D000274 SILICON ZENER DIODE 500mW, 2.4 THRU 3-0 VOLTS gdiBaioeG^oig-lBfleii’©^ e©E?p„ Central £@Bl?i!e©mgflUGt!Or C © 6 ’p.
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D000274
1N4372A
500mW,
DO-35
1N4370A
CBR10
CBR25Ser/es
CBR12
CBR30
0000SE3
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Untitled
Abstract: No abstract text available
Text: ESAE83-006 6 oa Y 7 ¥ < it - Y SCHOTTKY BARRIER DIODE : Features • ffivr Low Vp Super high speed switching. C o n n e c tio n D ia g ra m High reliability by planer design. A p p lic a tio n s High speed pow er switching. M a x im u m R atings and C ha ra cte ristics
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ESAE83-006
500ns
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D3SBA60
Abstract: SHINDENGEN DIODE
Text: T7U " K j Bridge Diode Single In-line Package OUTLINE DIMENSIONS D3SBA 600V 4A •» S Ü S IP • S I FSM • ffl § * » £ * ! f5 iS 0 S R S •* « . OA. • M I S . S I S . FA RATINGS A bsolute M ax im u m Ratings m h Item S to ra g e T em p e ra tu re
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D3SBA20
D3SBA60
D3SBA60
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: G S-TH0nS0N s D7E D T54LS85 T74LS85 71S1E37 D O lS Ilt 3 I OW POWER SCHOTTKY i INTEGRATED CIRCUITS 67C 15 121 T - 4 5 - n 4 -B IT M A G N IT U D E C O M P A R A T O R S DESCRIPTION The T54LS85/T74LS85 is a 4-bit Magnitude Com parator which compares two 4-bit words A,B , each
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71S1E37
T54LS85
T74LS85
T54LS85/T74LS85
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IRF9521
Abstract: f9520 IRF9520 Samsung
Text: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure
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DP12S4Ã
IRF9520/9521/9522/9523
F9520
F9512
F9523
IRF9520
IRF9521
IRF9522
IRF9523
IRF9521
f9520
IRF9520 Samsung
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1N5806
Abstract: 5806 microsemi
Text: Microsemi Corp. j SANTA A N A . CA F o r m o re i n f o r m a ti o n call: 714 9 7 9 -8 2 2 0 1N5802 thru 1N5806 i<t¿ ^ — y The diode experts V ÏJ A N S Î FEATURES ULTRA FAST MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE
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1N5802
1N5806
MIL-S-19500/477
1N5806
5806 microsemi
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1N5806
Abstract: 1N5802 1N5804 1N5805
Text: 1N5802 thru 1N5806 Micro/semi Corp. The diode expert* ÍJA N SÍ SANTA ANA. CA F o r m o re i n f o r m a ti o n call: 714 9 7 9 -8 2 2 0 FEATURES ULTRA FAST MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE
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979-K220
1N5802
1N5806
MIL-S-19500/477
1N5802
1N5806
1N5804
1N5805
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BUK426-1000A
Abstract: BUK426-1000B BUK426-100
Text: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION
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BUK426-1OOOA/B
711002b
BUK426
-1000A
-1000B
-SOT199
T-39-11
K426-10OOA/B
BUK426-1000A
BUK426-1000B
BUK426-100
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SF10LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE Package I FTO-220 SF10LC40 Unit :mm Weight 1.9« Typ 4.5 4 0 0 V 10 A Feature • ñS'fX • trr=50ns • 711^-10 K 2kV ( S II • • • • Low Noise tnr=50ns Full Molded Dielectric Strength 2kV Main Use •
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FTO-220
SF10LC40
SF10LC40
J533-1)
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F5LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II
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SF5LC40
F5LC40
110ms
J533-1)
F5LC40
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DIP-16PIN
Abstract: TA8460F TC9192AF TA7245F TA7291S TA8434F MAX15A TA7745 TA7261P TA7735F
Text: M otor C ontrol !Cs Application 1 chip General use comparator Double PLL tor PCC General use For HDD PLL Controller For FDD ForLBP Control amplifier 3-phase controller Hail motor driver eonboNer 3-phase For FDD 2-phase Sensoriess driver Sensoriess controlar
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TC9142AP
TC5081AP
TC9192AP
TC9192AF
TA8443F
TC9193AF
TC9203AP
TC9203AF
TC9242P
TC9242F
DIP-16PIN
TA8460F
TA7245F
TA7291S
TA8434F
MAX15A
TA7745
TA7261P
TA7735F
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C25P10Q
Abstract: 21126
Text: SCHOTTKY BARRIER DIODE C25P09Q C25P10Q 27.7A /90~ 100V FEATURES 4 71 1851 °Similar to TO-247AC TO-3P Case . 15 9(.62H) 3 b i.l4 :in r , I* 15.3(.60'2)~^j-" 3.41. 1341 J 5 71.224, ï31.208) ° Dual Diodes - Cathode Common » Low Forward Voltage Drop VM
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O-247AC
C25P09Q
C25P10Q
C25P10Q
21126
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D10SC4M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm D10SC4MR OUTLINE 40 V 10A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm Rating • Full Molded • 71 [ Æ - J U K Main Use • Switching Regulator • DC/DC Converter • D C /D C U V A ' - S 7
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D10SC4MR
D10SC
D10SC4M
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RN605
Abstract: 3261a
Text: 2x5 RECTANGULAR BAR LED LAMPS l j£ L T L -3 2 01 A L T L -3 2 1 1A L T L -3 2 21 A LT L -3 2 31 A / / / / 23203A 23213A 23223A 23233A 31E D LITE-ON INC " LTL-3251'A / 23253A Y E L LO W RED L T L -3 2 71 A / 23273A AM BE R BRIGHT RED H IG H E F F IC IE N C Y RED L T L -3 2 91 A 23293A O R A N G E
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LTL-3201A
3203A
LTL-3211A
3213A
LTL-3221A
3223A
LTL-3231A
3233A
LTL-3251A
3253A
RN605
3261a
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IRF340
Abstract: SFF340JDB
Text: 5S U- PRELIMINARY SFF340JDB SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 10 AMP 400 VOLTS 0.58Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate
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670-SSDI
SFF340JDB
IRF340
O-257DB
SFF340JDB
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