DIODE MARKING CODE A2 Y2 Search Results

2N60 transistor

Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

MOSFET MARK y2

Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
Contextual Info: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab

MOSFET MARK y2

Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

MOSFET MARK y2

Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

MOSFET MARK y2

Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

02n60

Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

MOSFET MARK y2

Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

MOSFET MARK y2

Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

A/mbr+0450

Contextual Info: MBR10100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100 2x5 Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use

Contextual Info: MBR20100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100V 2x10A Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use

H1117 3.3v

Abstract: H11175 H1117-ADJ H1117 CD1117 1117 s adj 920 MARK A5 SOT89 H1117-1.8 Mark Y2 SOT MARKING KV SOT89
Contextual Info: HI-SINCERITY Spec. No. : IC200401 Issued Date : 2004.02.01 Revised Date : 2005.07.14 Page No. : 1/8 MICROELECTRONICS CORP. H1117 Series H1117 Series Pin Assignment 3-Lead Plastic SOT-89 Package Code: M Pin 1: ADJ/GND Pin 2: VOUT Pin 3: VIN 1.2A Low Dropout Positive Voltage Regulator

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
Contextual Info: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A

H35N03J

Abstract: MOSFET N 30V 30A 252 mosfet sn60
Contextual Info: HI-SINCERITY Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H35N03J H35N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 35A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate

marking code k1

Abstract: marking A1 TRANSISTOR HI127
Contextual Info: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic

marking code k1

Abstract: marking A1 TRANSISTOR marking y1 HI122
Contextual Info: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.

HJ127

Abstract: marking code 8A
Contextual Info: HI-SINCERITY Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic

HE6009

Abstract: HJ122 Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.

12w sot 23-3

Abstract: CMSZDA33V zener DIODE marking A1 12w SOT 323 marking CODE Z2Z 12w marking code SOT-323 12w marking code sot 23 marking 12W zener diode a2 11 marking code 12w
Contextual Info: Central CMSZDA3V0 THRU CMSZDA33V TM Semiconductor Corp. DUAL ZENER DIODE 3.0 VOLTS THRU 33 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA3V0 Series Silicon Dual Zener Diode is a high quality voltage regulator, connected in a common anode configuration, for use in industrial, commercial,

Contextual Info: DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS • 100% Unclamped Inductive Switch (UIS) test in production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 

Contextual Info: SBR10U45D1Q Green 10A SBR SUPER BARRIER RECTIFIER Product Summary VRRM V IO (A) 45 10 Features and Benefits VF MAX(V) @+25°C IR MAX(mA) @ +25°C 0.57 0.3 • • • NEW PRODUCT Description and Applications • This Super Barrier Rectifier (SBR) diode has been designed to meet

Contextual Info: SBR15U100CTLQ 15A SBR SUPER BARRIER RECTIFIER Green NEW PRODUCT Product Summary VRRM V 100 IO (A) 15 VF MAX (V) @+25°C 0.8 Features and Benefits •  IR MAX (mA) @+25°C 0.1 capability than schottky diodes ensuring more rugged and  Description and Applications

Contextual Info: SBR1045D1Q 10A SBR SUPER BARRIER RECTIFIER Product Summary VRRM V 45 IO (A) 10 Features VF MAX (V) @+25°C 0.58 •  IR MAX (mA) @+25°C 0.3 100% Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and

Contextual Info: SBR15U100CTLQ 15A SBR SUPER BARRIER RECTIFIER Green NEW PRODUCT Product Summary Features and Benefits VRRM V IO (A) VF MAX (V) @+25°C IR MAX (mA) @+25°C 100 15 0.8 0.1 • • 100% Avalanche Tested Patented SBR technology provides a superior avalanche