DIODE MARKING CODE 4B Search Results
DIODE MARKING CODE 4B Datasheets Context Search
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
Diode RL 4B
Abstract: phototransistor microwaves Diode 4B PS2841-4A PS2841-4B 4b, optocoupler PS280X
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PS2841-4A PS2841-4B PS2841-4A: PS2841-4B: PS2841-4A PS2841-4B 12-pin Diode RL 4B phototransistor microwaves Diode 4B 4b, optocoupler PS280X | |
Diode 4B
Abstract: Diode RL 4B phototransistor microwaves PS2841-4A PS2841-4B 4B marking
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PS2841-4A PS2841-4B PS2841-4A: PS2841-4B: PS2841-4A PS2841-4B 12-pin PS280X Diode 4B Diode RL 4B phototransistor microwaves 4B marking | |
diode blue stripe
Abstract: Wavetek 134 DSR5500X DSR5000 DSR5400X 2N4430 DSR3000 DSR5700X
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00014H1 DSR3000 DSR3000 DSR5000 diode blue stripe Wavetek 134 DSR5500X DSR5400X 2N4430 DSR5700X | |
marking DIODE 2U 04
Abstract: 386b
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OT-323 SC-70 HSMP-381B/C/E/F HSMP-386B/C/E/F HSMP-389B/C/E/F HSMP-481B, -482B, -489B marking DIODE 2U 04 386b | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . ESD Protection Diode VCUT07B1-HD1 Bidirectional Symmetrical BiSy Single-Line ESD Protection Diode in Ultra-Compact LLP1006-2L Package KEY BENEFITS • Ultra-compact LLP1006-2L package –– Small footprint: 1.0 mm by 0.6 mm |
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VCUT07B1-HD1 LLP1006-2L 31-May-12 VMN-PT0321-1411 | |
SB220-G
Abstract: SB245-G SB250-G SB260-G SB280-G SB2100-G
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SB220-G SB2100-G DO-41 UL94-V0 MIL-STD-750 SB240 SB245 SB250 SB260 SB245-G SB250-G SB260-G SB280-G SB2100-G | |
SB320-G
Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
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SB320-G SB3100-G DO-201AD UL94-V0 MIL-STD-750 45B-G SB350B-G SB360B-G SB380B-G SB345-G SB350-G SB360-G SB380-G SB3100-G | |
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability 1.0 25.4 Min. |
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SB120-G SB1100-G DO-41 UL94-V0 MIL-STD-750 SB140 SB145 SB150 SB160 | |
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. .107(2.7) .080(2.0) -High surge current capability |
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SB220-G SB2100-G DO-41 UL94-V0 MIL-STD-750 SB240 SB245 SB250 SB260 | |
SB120-G
Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
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SB120-G SB1100-G DO-41 UL94-V0 MIL-STD-750 cathode20 SB140 SB145 SB150 SB145-G SB150-G SB160-G SB180-G SB1100-G | |
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SB550-G
Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G
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SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 45B-G SB550B-G SB560B-G SB580B-G SB550-G SB545-G SB560-G SB580-G SB5100-G 5100G | |
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free |
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SB320E-G SB3100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B360E SB380E SB3100E | |
SB320E-G
Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
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SB320E-G SB3100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B360E SB380E SB3100E SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G | |
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free |
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SB320E-G SB3100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 SB380E SB3100E SB320E | |
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free |
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SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 Method60E SB580E SB5100E | |
SB545E-G
Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G
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SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B560E SB580E SB5100E SB545E-G SB550E-G SB560E-G SB580E-G SB5100E-G | |
SB545Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8) |
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SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 SB550B-G SB560B-G SB580B-G SB5100B-G SB545 | |
Contextual Info: ESDAVLC5-4BX4 4-line bidirectional Transil , transient surge voltage suppressor for ESD protection Datasheet − production data Features 2 1 • 4 bidirectional Transil diodes • Breakdown voltage VBR = 5.5 V min. • Low leakage current: < 50 nA GND • Very small PCB area: 0.64 mm2 |
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DocID023365 | |
Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 | |
Contextual Info: SIEMENS Silicon Schottky Diodes • • • • £ BAS 7 0 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with C E C C quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions! |
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Q62702-A118 OT-23 CHA07Ã Q62702-A730 EHA0700S Q62702-A711 EHA07004 Q62702-A774 EHA07006 0235bOS |