CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
|
Original
|
400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
|
PDF
|
IEC 947-7-1 terminal block 400v
Abstract: din 46235 1064760000 M12-M16 1011120000 95 WDU Neozed 1027700000 gw 4007 1020500000
Text: W-series 2 W-series sets standards! When it comes to functional perfection even in details, Weidmüller’s W-series defines the market standards for many years now! The W-series comprises producte for conductor cross-sections between 1.5 and 300 mm2 which can be used for all important electrical applications connecting,
|
Original
|
|
PDF
|
01-433-036
Abstract: eao 01-262.0252 01-262.0252 01273025 10-1116-1229 01.051.006 10-1112.1279 014-730
Text: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 01 Switches and Indicators 01 Contents 01 Description . 3 Product Assembly . 4
|
Original
|
|
PDF
|
JANTX1N5719
Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Text: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess
|
Original
|
MIL-PRF-19500/443
037Z3
JANTX1N5719
01038-1N5719TX
C68001
1N5719 equivalent
MA1N5719HX
1N4456
96341
HP JANTX1N5719
MA1N5719
C-68001
|
PDF
|
TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
|
Original
|
|
PDF
|
D65019
Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100
|
Original
|
MIL-S-19500/322
ASME-14
037Z3
D65019
1N23 diode
JAN1N23WE
1N23WGMR
1N23 Diode Holder
037Z3 01037
JAN1N23WG
JAN1N23WGMR
1N23WG
|
PDF
|
siba 90 058 05 500A
Abstract: LINDNER fuses SAKC10 SIBA FUSE FF varistor 05 k 575 0183360000 indicator fuse terminal SAKS1 SAK4 SL TERMINAL 100 0667520000 SAKR-35
Text: Modular feed-through terminals 2.5 mm2 SAKD 2.5/35 2.5 mm2 SAK 2.5 TS 35 / PA TS 35 / PA A When using ATEX certified components in hazardous area applications the installation instructions and the rated data for accessories in the technical appendix must be considered.
|
Original
|
TS35x7
H05V/H07V)
siba 90 058 05 500A
LINDNER fuses
SAKC10
SIBA FUSE FF
varistor 05 k 575
0183360000
indicator fuse terminal SAKS1
SAK4 SL TERMINAL 100
0667520000
SAKR-35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UCC27223 SLUS558 − DECEMBER 2003 HIGHĆEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER WITH ENABLE FEATURES D Maximizes Efficiency by Minimizing D D D D D D D D APPLICATIONS D Multiphase Converters in Combination With Body-Diode Conduction and Reverse Recovery Losses
|
Original
|
UCC27223
SLUS558
14-Pin
|
PDF
|
SLUP169
Abstract: No abstract text available
Text: UCC27221 UCC27222 SLUS486B − AUGUST 2001 − REVISED JULY 2003 HIGHĆEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER FEATURES D Maximizes Efficiency by Minimizing D D D D D D D APPLICATIONS D Non-Isolated Single or Multi-phased Body-Diode Conduction and Reverse
|
Original
|
UCC27221
UCC27222
SLUS486B
14-Pin
SLUP169
|
PDF
|
zkb* vac
Abstract: LINDNER fuses WEIDMULLER WDU2.5 IEC 947-7-1 terminal block 400v diode catalogue LINDNER fuses neozed WPE 35 EARTH 101050 level measurement with displacer SIBA FUSE FF D-FUSE E-16
Text: Terminals New in this catalogue W-Series Installation terminal blocks WPE 35 N Page 2/14 different colour versions ZQV Cross-connections Page 2/5 Installation terminal blocks WDU 35 N Pluggable cross-connections for WDU 2.5 Page 2/9 Page 2/4 Cross-connections
|
Original
|
TS15/TS35
zkb* vac
LINDNER fuses
WEIDMULLER WDU2.5
IEC 947-7-1 terminal block 400v
diode catalogue
LINDNER fuses neozed
WPE 35 EARTH 101050
level measurement with displacer
SIBA FUSE FF
D-FUSE E-16
|
PDF
|
4410 mosfet
Abstract: LTC4410 IRLML6401 LTC4053 LTC4410ES6 usb flash drive 4410 "USB" peripheral
Text: Final Electrical Specifications LTC4410 USB Power Manager in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Manages Total Power Between a USB Peripheral and Battery Charger Minimal Voltage Drop 100mV at 500mA Ultralow Battery Drain: 1µA
|
Original
|
LTC4410
100mV
500mA)
LTC4410
700mA
LTC1734L
180mA
LTC4053
100mA/500mA
LTC4412
4410 mosfet
IRLML6401
LTC4053
LTC4410ES6
usb flash drive
4410
"USB" peripheral
|
PDF
|
BSB012N03LX3
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSB012N03LX3 G Data Sheet 2.1, 2009-11-17 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012N03LX3 G 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
|
Original
|
BSB012N03LX3
OptiMOSTM30V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSB012N03LX3 G OptiMOS 3 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 1.2 mΩ ID 180 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application
|
Original
|
BSB012N03LX3
|
PDF
|
BSB012N03LX3
Abstract: JESD22
Text: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) MG-WDSON-2
|
Original
|
BSB012N03LX3
JESD22
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BSB012N03LX3 G TM OptiMOS 3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) MG-WDSON-2
|
Original
|
BSB012N03LX3
|
PDF
|
01-131.022
Abstract: 10-1116-1229 0112102 014-630 01-273.025 2 10-1114.1249 014-730
Text: Switches and Indicators 01 01 Switches and Indicators Index Series 01 Description Page 15 Product Assembly Page 16 Product Range - pushbutton for standard mounting - accessories / spare parts 14 01.2000 Page 17 Page 19 Technical Data Page 25 Technical Drawing / Dimension / Layouts
|
Original
|
|
PDF
|
BSB012N03LX3
Abstract: BSB012N03LX3 G
Text: BSB012N03LX3 G OptiMOS 3 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 1.2 mΩ ID 180 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application
|
Original
|
BSB012N03LX3
BSB012N03LX3 G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
|
Original
|
BSB012N03LX3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCANSTA112 www.ti.com SNLS161I – DECEMBER 2002 – REVISED APRIL 2013 SCANSTA112 7-Port Multidrop IEEE 1149.1 JTAG Multiplexer Check for Samples: SCANSTA112 FEATURES DESCRIPTION • The SCANSTA112 extends the IEEE Std. 1149.1 test bus into a multidrop test bus environment. The
|
Original
|
SCANSTA112
SNLS161I
SCANSTA112
IEEE1149
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • fl2 3 5 b05 01037titj 343 ■ SIEM ENS 1 -A H e x -H a lf-B rid g e / D o u b le S ix -D riv e r T L E 5 2 0 8 -6 G Overview Features • • • • • • • • • • • • • • Six High-Side and six Low-Side-Drivers Free configurable as switch, half-bridge or H-bridge
|
OCR Scan
|
01037titj
P-DSO-28-6
AE35bQ5
|
PDF
|
smd 2t1
Abstract: 1PS59SB10 marking code a2 SMD diode MLC358 A2 DIODE SMD CODE MARKING smd diode marking code a2 A11 MARKING CODE 5 1PS59SB15 1PS59SB14 1PS59SB15
Text: Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS59SB10 series PINNING • Low forward voltage 1PS59SB. PIN • Guard ring protected • Small SMD package. APPLICATIONS 10 14 15 16 1 a 2 n.c. ai k2 ai a2 ki k2 3 k
|
OCR Scan
|
1PS59SB10
1PS59SB14
1PS59SB15
1PS59SB16
1PS59SB.
MSA314
711Dfi2b
smd 2t1
marking code a2 SMD diode
MLC358
A2 DIODE SMD CODE MARKING
smd diode marking code a2
A11 MARKING CODE
5 1PS59SB15
|
PDF
|
smd diode 106a
Abstract: smd 106a SOD106A diode t37 BYG90-90 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier
Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD
|
OCR Scan
|
BYG90-90
BYG90-90
OD106A
7110fl2b
711002b
D1G3223
smd diode 106a
smd 106a
SOD106A
diode t37
philips Schottky diode
very high current schottky diode
diode package outline
schottky barrier rectifier diode 15 A
schottky barrier
|
PDF
|
smd diode 106a
Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD
|
OCR Scan
|
BYG90-90
BYG90-90
OD106A
b-100
7110fl2b
711002b
01032B3
smd diode 106a
DIODE MARKING B85
smd diode byg
SOD106A
smd 106a
byg 100 diode
smd diode 1S
B85 diode
smd diode byg 20
|
PDF
|
ZTE MF 180 circuit
Abstract: 78017 ZTE 2 L18A L18B LP2982 MA05A TF010
Text: N a t i o n a l S e m i c o n d u c t o r September 1996 LP2982 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2982 is a 50 mA, fixed-output voltage regulator de signed to provide ultra low dropout and lower noise in bat
|
OCR Scan
|
LP2982
LP2982
OT-23
ZTE MF 180 circuit
78017
ZTE 2
L18A
L18B
MA05A
TF010
|
PDF
|