749022016
Abstract: 749022017 SMBJ58A
Text: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over
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DC2093A
LT4275/LT4321
LT4321,
DC2093A
DC2093A-A,
DC2093A-B,
DC2093A-C
DC2093A-A
LT4275A
dc2093af
749022016
749022017
SMBJ58A
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1009I
Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
Text: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference
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LT1009
LM136
LT1236
LT1460
10ppm/
OT-23
LT1634
LT1461
1009ff
1009I
LT1009CZ
LT317A
1009f
406p
LT1019
LT1009CH
LT1009I
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triac tic 2260
Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Text: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification
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175BGQ030
Abstract: 175BGQ030J Diode HER 207 N-1001
Text: PD-20997 rev. D 11/99 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics Description/Features The NEW 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in
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PD-20997
175BGQ030
175BGQ030J
175BGQ030
175BGQ030J
Diode HER 207
N-1001
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31136 remote control receiver circuit
Abstract: EPIC-1 G961 iec 2091 IOM2
Text: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification
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16-bit
31136 remote control receiver circuit
EPIC-1
G961
iec 2091
IOM2
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Q-67100-H6341
Abstract: star delta wiring diagram with timer UTC 2025 datasheet 60119 "Aplication Notes" aplication note remote control EPIC-1 MON-8L ps2 controller UTC 2025
Text: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3
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16-bit
Q-67100-H6341
star delta wiring diagram with timer
UTC 2025 datasheet
60119
"Aplication Notes"
aplication note remote control
EPIC-1
MON-8L
ps2 controller
UTC 2025
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Diode LT 209
Abstract: CD5530 1N5518B 1N5546B CD5518B CD5519B CD5520B CD5521B CD5522B CD5523B
Text: • 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING
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1N5518B
1N5546B
MIL-PRF-19500/437
1N5546B
CD5518B
CD5546B
CD5519B
CD5520B
Diode LT 209
CD5530
CD5518B
CD5519B
CD5520B
CD5521B
CD5522B
CD5523B
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LT 8233
Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00001t3
9305-F-078
lead-171
LT 8233
diode LT 8233
4CM6
U891
L486
D029
U615
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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Diode LT 209
Abstract: SCR thyristor test
Text: SGS-IHOMSON MDS50 ly DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d RM = V rrm UP TO 1200 V ■ lT AV = 3 5 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTIO N The MDS50 family are consist of one rectifier
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MDS50
MDS50
Diode LT 209
SCR thyristor test
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ITB68
Abstract: No abstract text available
Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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9305-F-080
DO-35
DO-41
DO-15
DO-201AD
ITB68
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MRD500
Abstract: motorola MRD500 MRD510 laser diode RW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le
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MRD500
MRD510
RD500)
MRD510)
MRD500
motorola MRD500
MRD510
laser diode RW
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MRD510
Abstract: MRD500 motorola MRD500 photo detectors convex lens 250 mw ultra stable diode
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIO DE O U TP U T PIN SILICO N 250 M ILLIW A TTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te c tio n , lig h t d e m o d u la tio n , d e te c tio n o f v is ib le
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MRD500
MRD510
MRD500)
MRD510)
MRD510
MRD500
motorola MRD500
photo detectors
convex lens
250 mw ultra stable diode
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mbr3545
Abstract: MBR3535 MBR3545H
Text: MBR3520 MBR3535 MBR3545, H, HI M M O T O R O L A S E M IC O N D U C T O R S PO B O X 20912 • P H O E N IX . A R I Z O N A 85036 SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S 3 5 A M P ER E S 2 0 to 4 5 VOLTS . . . using a platinum barrier metal in a large area metal-to-silicon
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MBR3520
MBR3535
MBR3545,
24ent
MBR3520/D
mbr3545
MBR3545H
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LTH-1550-01
Abstract: sensor LTH 1550-01 LTH 1550-01 IR SENSOR LTH-209-01 1550-01 reflective object sensors
Text: REFLECTIVE OBJECT SENSORS LTH-20Ô-01 /LTH-1550-01/LTH-1650-01 FEATURE •Non-contact switching. •For direct PC board or dual-in-line socket mounting. •Fast switching speed. •Reflective object sensor. DESCRIPTION The LTH-209-01/LTH-1550-01/LTH-1650-01 reflective object
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LTH-20
/LTH-1550-01/LTH-1650-01
LTH-209-01/LTH-1550-01/LTH-1650-01
LTH-209-01
LTH-1550-01
sensor LTH 1550-01
LTH 1550-01 IR SENSOR
LTH-209-01
1550-01
reflective object sensors
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MR2520L
Abstract: C159M
Text: 6 3 6 7 2 55 MOTOROLA SC M O T O R O L _59C 6 1 8 6 6 D T“- / / - 2 3 j Mrjfc.3t.72SS O O b l ö b b 3 <D I O D E S /OPTO A MR2520L MR2525L SEM ICO N D U CTO RS P.O. BOX 20912 • PHOENIX, A RIZO NA 85036 OVERVOLTAGE TR A N S IEN T SUPPRESSORS OVERVOLTAGE
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MR2520L
MR2525L
C159M
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2SK513
Abstract: 10091 FET 2SK513 Hitachi Scans-001
Text: -4 4 9 B 2 U S 'HI IAUH1 / UP i U h L h C I R U N 1O S 7 73C 1 00 89 2SK513 0 7 ~ -3 f-/ / 3>E J LiMcìtiEDS O D I O O S 11! S S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES ' • High Breakdow n Voltage. • • High Speed Sw itching.
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-2SK513
2SK513
10091
FET 2SK513
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A
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IRFP140N
O-247
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6645 P-Channel Silicon MOSFET 3LP01C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching, 2091A • 2.5V drive. [3LP 01C ] 0.16 r-fl |c0 to 0.1 ÏJ 1 : G ate
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ENN6645
3LP01C
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Untitled
Abstract: No abstract text available
Text: I Ordering number : ENNSSW N-Channel Silicon MOSFET 5HN01C ISMÊYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2091A [5H N 0 1C ] 0.4 0.16, ^ = 3 .Oto 0.1
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5HN01C
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em 483
Abstract: d2504
Text: Elt HERMETIC PAIR OP T OE L E CT RONI CS QPAI223 PACKAGE DIMENSIONS .230 5.48 _j .209 (5.31) . .188 (4.78) 180(4.57) .189(4.80) '.1 7 9 (4 .5 5 ) r .070(V78) .055(1.39) .215(5.46) .5 0 5 (5 .2 1 )' r .205 (5.21) .190 4.83) 255 (6.48) MAX _L 030(0 76) T MAX
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QPAI223
ST2137
QPA1223
QPA1223
em 483
d2504
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la 1201 sanyo
Abstract: ic 8057 block diagram pin diagram of lt 542 1109a
Text: 7 ' LT1109A M icro p o w e r D C /D C C on ve rter Flash M em ory VPP G e n e ra to r A djustable a n d Fixed 5V, 12V u m TECHNOLOGY F€flTUft€S DCSCMPTIOn • Uses Oft-the-Shelf Inductors The LT1109A is a simple step-up DC/DC converter. The 8pin DIP or SOIC devices require only fourexternal compo
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LT1109A
360juA
LT1109A-12
150mA
109A-5
110mA
la 1201 sanyo
ic 8057 block diagram
pin diagram of lt 542
1109a
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LT 745 S
Abstract: tunnel diode General Electric
Text: 1. T e s t R e s u lt s A. Life Test Results Table 1 shows the life test results of B Series C 2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistisqrs) . T a b le 1 TYPE TEST ITEMS High Temp. DC Bias
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Diode LT 450
Abstract: T1961
Text: A P ow er T e c h h o lo g y * 1 - Cathoda 2 - Anode Back of Caaa-Cathoda dvanced APT30D20B 200V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PR O D U C T A P P LIC A T IO N S P R O D U C T F EA T U R E S Anti-Parallal Diode -Switchmode Powar Supply -Invertors
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APT30D20B
O-247
O-247AD
T-------19
Diode LT 450
T1961
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