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    InvenSense Inc MPU-6150

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    Panduit Corp Z22U-615S

    ENCLOSURE S STL 11.6"L X 24"W
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    Avnet Americas Z22U-615S Bulk 8 Weeks 1
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    InvenSense Inc MPU-6150L

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    InvenSense Inc EV_MPU-6150

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    KEMET Corporation PEH200KU6150MB2

    CAP ALUM SCRW TERM 85C
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    DigiKey PEH200KU6150MB2 Box 96
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    Newark PEH200KU6150MB2 Bulk 96
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    U615 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    oz9938

    Abstract: OZ9938GN oz993
    Text: OZ9938 Change Summary CHANGES No. Applicable Section 1. Electrical Characteristics 2. Throughout datasheet Description Update 慞rotection release threshold in ‘Timer & protection’ parameter Min & Max limits Miscellaneous changes Page s 3 - REVISION HISTORY


    Original     		OZ9938 OZ9938G, OZ9938-DS-1 oz9938 OZ9938GN oz993 PDF

    Untitled

    Abstract: No abstract text available
    Text: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache


    OCR Scan     		DM512K64DTBDM512K72DTE /512Kb 168BD5-TR 72-bit PDF

    LTN150XG-L05

    Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
    Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A


    Original     		BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A LTN150XG-L05 ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756 PDF

    PP3V42G3H

    Abstract: temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700
    Text: 8 6 7 REV .csa Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		ITP700FLEX PP3V42G3H temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700 PDF

    54B2

    Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504 PDF

    ar9350

    Abstract: Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06


    Original     		ITP700FLEX ar9350 Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT PDF

    CQX 86

    Abstract: U832 write-verify RaR8 81 u218 A09T
    Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		DM512K64DTE/DM512K72DTE 512Kb 64/512Kb 168BD5-TR DM512K72DTE 72-bit CQX 86 U832 write-verify RaR8 81 u218 A09T PDF

    J16.000

    Abstract: power transformer L07 MIL-STD-1553A
    Text: QGJG BU-61590 IL.C DATA DEVICE CORPORATIONS_ _ MIL-STD-1553A/B AND McAIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTIO N DDC's BU-61590 BC/RT/MT Universal A d v a n c e d C o m m u n ic a tio n E ngine (ACE) terminal comprises a complete


    OCR Scan     		BU-61590 MIL-STD-1553A/B BU-61590 BU61590 78-pin 1553B, A3818, A5232, A5690 BU-61590FX, J16.000 power transformer L07 MIL-STD-1553A PDF

    u634

    Abstract: U-618
    Text: SP336E Evaluation Board Manual 11-23-10 Rev 2.1 Features • Easy Evaluation of the SP336E Transceiver • RS-232 and RS-485 Protocols • Local or Remote Loop Back testing • 10Mbps Differential Transmission Rates • Test point for cable or jumper loop-back


    Original     		SP336E RS-232 RS-485 10Mbps SP336 u634 U-618 PDF

    Untitled

    Abstract: No abstract text available
    Text: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within


    OCR Scan     		DM1M64DTE/DM1M72DTE 64/1Mb 16Kbytes 168BD5-TR DM1M72DTE- 72-bit PDF

    U10A-14

    Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
    Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		DM512K64DT6/DM512K72DT6 512Kb 64/512Kb 168BD5-TR DM512K72DT 72-bit U10A-14 U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318 PDF

    PJ 52

    Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
    Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		DM1M64DT6/DM1M72DT6 DM1M72DT6 72-blt PJ 52 U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218 PDF

    MIL-STD-1773

    Abstract: DDC 61580 BU-65180 BUS-61580 B-3067 HLP-6002 DDC 65170 MIL-STD 1553B cable connector 4BA7 BU-61580
    Text: 000 BU-65170/61580 and BU-61585 ILC DATA. DEVICE CORPORATION _ _ MIL-STD-1553A/B NOTICE 2 RT and BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE ACE User’s Guide Also Available D E S C R IP T IO N D D C ’s B U -651 70 , B U -6 1 5 8 0 a n d BU-61585 BC/RT/MT Advanced Com­


    OCR Scan     		BU-65170/61580 BU-61585 MIL-STD-1553A/B BU-651 BU-61580 MIL-STD-1553 70-pin, BU-615 MIL-STD-1773 DDC 61580 BU-65180 BUS-61580 B-3067 HLP-6002 DDC 65170 MIL-STD 1553B cable connector 4BA7 PDF

    xn 1049 dp

    Abstract: atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C
    Text: This Document can not be used without Samsung's authorization. 7. Circuit Diagram 4 SE DONA Signature : 3 3 APPROVAL 2005/10/05 SEDONA MAIN BA41-#####A PR 0.81 CPU :Intel Y onah667 Chip Set :Intel Calistoga & ICH7-M Remarks : Mobility Platform : : : : : :


    Original     		onah667 BA41-# heet18. heet19. heet20 heet24. heet25. M56-P xn 1049 dp atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C PDF

    2SD618

    Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		Yonah667 BA41-00697A CALISTP11574 TP11575 TP11578 TP11579 TP11516 TP11517 TP11520 2SD618 MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2 PDF

    CQ649

    Abstract: c214 diode b14 diode ar3012 56B2 51B3 R819B 55b2 samsung electronics ba41 HDR-10P-1R-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents HABANA CPU :Intel Yonah -2M/1M


    Original     		BA41-# YONAH667 Sheet18. Sheet00nF 100nF 100nF HDR-10P-SMD SW1005 CONN-12P-FPC CQ649 c214 diode b14 diode ar3012 56B2 51B3 R819B 55b2 samsung electronics ba41 HDR-10P-1R-SMD PDF

    ar9350

    Abstract: PP3V42 p51 apple PP3V42G3H FERR-220-OHM apple lcd pinout B20 SC70-6 p66 apple LPC Debug Connector APPLE LCD INVERTER
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06


    Original     		ITP700FLEX ar9350 PP3V42 p51 apple PP3V42G3H FERR-220-OHM apple lcd pinout B20 SC70-6 p66 apple LPC Debug Connector APPLE LCD INVERTER PDF

    U23C-36

    Abstract: No abstract text available
    Text: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		DM1M64DT6/DM1M72DT6 16Kbytes DM1M72DT6- 72-bit U23C-36 PDF

    Untitled

    Abstract: No abstract text available
    Text: 000 BU-65170/61580 and BU-61585 ILC DATA DEVICE CORPORATION MIL-STD-1553A/B NOTICE 2 RT and BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE ACE User’s Guide Also Available D E S C R IP T IO N FEATURES • Fully Integrated Bus Interface D D C ’s B U -651 70, B U -6 1 5 8 0 a n d


    OCR Scan     		BU-65170/61580 BU-61585 MIL-STD-1553A/B BU-61585 MIL-STD1553 70-pin, 70-pin PDF

    U1615

    Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
    Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		DM1M64DT6/DM1M72DT6 64/1Mb 16Kbytes 168BD5-TR DM1M72DT6 72-bit U1615 u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123 PDF

    ups transformer winding formula

    Abstract: ups PURE SINE WAVE schematic diagram schematic diagram UPS numeric digital 600 plus schematic diagram online UPS schematic diagram of double conversion online UPS smd diode ae c604 d1n4149 dc-ac inverter PURE SINE WAVE schematic diagram UC3843 lead acid battery charger application note 3 phase ups PURE SINE WAVE schematic diagram
    Text: Single Phase On-Line UPS Using MC9S12E128 Designer Reference Manual HCS12 Microcontrollers DRM064 Rev. 0 09/2004 freescale.com Single Phase On-Line UPS Using MC9S12E128 Designer Reference Manual by: Ivan Feno, Pavel Grasblum and Petr Stekl Freescale Semiconductor Czech System Laboratories


    Original     		MC9S12E128 HCS12 DRM064 ups transformer winding formula ups PURE SINE WAVE schematic diagram schematic diagram UPS numeric digital 600 plus schematic diagram online UPS schematic diagram of double conversion online UPS smd diode ae c604 d1n4149 dc-ac inverter PURE SINE WAVE schematic diagram UC3843 lead acid battery charger application note 3 phase ups PURE SINE WAVE schematic diagram PDF

    ISL9504

    Abstract: macbook pro 13 m9 apple PP3V42G3H 51c7 macbook 5d4 diode "board view" macbook diode 62b3 28b sot23-3
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEMATIC,MACBOOK PRO 17" ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ?


    Original     		PDF

    AES2501

    Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :


    Original     		CONTROLLERP1311 TP1312 TP1313 TP1314 TP1251 TP1252 TP1253 TP1254 TP1255 TP1256 AES2501 ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip PDF

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645 PDF