DIODE KIV
Abstract: SIDAC KIV DIODE KIV 4 diode KIV 8 diode KIV 70 DIODE KIV 2 kiv 07 sidac violet kiv diode KIV* diode
Text: SIDAC SILICON DIODE FOR ALTERNATING CURRENT Sidac Features 1. Symmetrical characteristics. 2. Directly switching performance to commercial power sources and generating pulse by simple circuit. 3. The glass passivation ensures high reliability. Application
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K1V10
K1V14
DIODE KIV
SIDAC KIV
DIODE KIV 4
diode KIV 8
diode KIV 70
DIODE KIV 2
kiv 07
sidac violet
kiv diode
KIV* diode
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Untitled
Abstract: No abstract text available
Text: l u v s t * * * - !* l&MXJ'Jyif Low Noise Bridge Single In-line Package Bridge Diode • ^ ^ H l OUTLINE DIMENSIONS LN1VB60 600V 1.2A 45 £ 1 • S IP llv t r - V «a± *nîEowcB, MMfàM RATINGS Absolute Maximum Ratings (i&Âw*v>^ê- T/ =25°C m s Item
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LN1VB60
LN1VB60
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Untitled
Abstract: No abstract text available
Text: î/y^n/'fy^'fyM - j'j v V ÿ 'C t - F Bridge Diode Single In-line Package OUTLINE DIMENSIONS D2SB 800V 1.5A 45 £1 •»süsipn’s /'r-y RATINGS • ÌÈ $ ÌÌt ^ /È !Ì& a s Item «ffSK Storage Temperature »•S-SIJfiK Operating Junction Temperature Maximum Reverse Voltage
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J514-5
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D2SB 73
Abstract: d2sb
Text: - j'j v V ÿ 'C t - F Bridge Diode î / y ^ n / ' f y ^ ' f y M Single In-line Package OUTLINE DIMENSIONS D2SBA 600V 1.5A 45 £1 •»süsiPA’y 'r -y • H I fsm RATINGS • ÌÈ $ ÌÌt ^ /È !Ì& a s Item fa -t Symbol Operating Junction Temperature Tstg
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50HzjESSt,
J514-5
D2SB 73
d2sb
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LN1WBA60
Abstract: D1AA
Text: UM XJUySf Bridge Diode T 2 7 M > 5 - < 'Æ Low Noise Bridge Dual In-line Package • ^ ^ H l OUTLINE DIMENSIONS LN1WBA60 600V 1.1 A 45 £1 •/MUDIPA’s / i r - y «fiLtCD SâSEO LY C B:, Ü E P tt« £ C ! B B < MMfàM RATINGS A b so lu te M axim um R ating s
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LN1WBA60
LN1WBA60
50HziE
50HzjEKfe
J514-5
D1AA
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Untitled
Abstract: No abstract text available
Text: Bridge Diode Surface Mounting Device OUTLINE DIMENSIONS Package : 1W 7.6 L N 1 W B A 6 0 600V 1.1 A ¡HSU • / J M U S M D A " '7 ^ - y I 2.0 ti i i LeP pu 0.8MIN \r hC a25 UMAX MMfáñ RATINGS TI Absolute Maximum Ratings m a Item Storage Temperature s-s-gusa
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LN1WBA60
50HziE
LN1WBA60
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2FI50G
Abstract: diode 9D Bp
Text: 2 R 5 0 G 2 x 50A Jl' M ttM '& ii •O utline Drawings FAST RECOVERY DIODE MODULE ■ t t f t ! Features S h o rt Reverse Recovery Tim e V ariety o f C o n n e c tio n M e n u • IfeHJf2 Insulated Type ■ f f l i i * A pplications A rc -W e ld e rs •
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2H50G
2x50A)
2FI50Gâ
2FI50G
diode 9D Bp
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2FI50A
Abstract: T760 T810 T930 lthf* E3
Text: 2FI50A 2 x50A ! Outline Drawings FAST RECOVERY DIODE MODULE • 4# : Features • S h o rt Reverse Recovery Tim e • V ariety o f C o n n e c tio n M e n u • SfeSfîfé Insulated Type ■ ff liÊ i A pplications A rc -W e ld e rs • K ffl • F re e -W h e e lin g D iode
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2FI50A
2X50A)
2FI50A
50/60Hz
eaTa5S35^
l95t/R89
T760
T810
T930
lthf* E3
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SHINDENGEN DIODE
Abstract: KIVF
Text: y 3 y h * / i ' J T f ' f ï - F Schottky Barrier Diode_ y 'O m Twin Diode • fl-J fê tfâ s IS I O U T L IN E D IM E N S IO N S S60SC6 M 60V 60A IS il • T j 1 50TC ♦ P hrsm y7 A ' 3 y i ' i S a i I • e jc ô '/j'S x i ffl m msRmm • D C /ü C z iV A - S '
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S60SC6
S60SC6M
SHINDENGEN DIODE
KIVF
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H A 431
Abstract: BYV43F BYV43F-35 BYV43F-40A M1208 M2845
Text: — 1.1 N AUER PHILIPS/DISCRETE ObE D • _ bbS3T31 0011407 fl BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical
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bbS3T31
BYV43F
T-03-19
OT-186
M1246
m1209
M1210
H A 431
BYV43F-35
BYV43F-40A
M1208
M2845
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KDS 9E
Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Text: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter
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O-220
C67078-S1302-A2
SIL03609
SILQ3610
SIL03611
SIL03612
KDS 9E
l0225
C67078-A1307-A3
KDS 7B
KDS 1M
ksd 202
transistor buz 36
KDS 7c
C67078-S1302-A2
transistor buz 293
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Marking Code FGs
Abstract: MARKING CODE AGS E6906 BSP135
Text: SIEMENS SIPMOS Small-Signal Transistor • rDS BSP 135 6oo v • /„ ® • • • • 0.100 A ^ D S o n 60 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Information Pin Conf gura tion Marking Package
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OT-223
Q62702-S655
E6327
Q67000-S283
E6906
SIK02140
Marking Code FGs
MARKING CODE AGS
BSP135
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shockley diode
Abstract: shockley diode applications K1V15 shockley SIDAC K1V K1V18 k1v8 diode k1v sidac
Text: — E FOR ALTERNATING CURRENT ttä m v m E E G m za n tm * By adding regulated vo lta g e , the S ID A C is a semiconductor which can conduct in either direction. If the current flow passing through the element becomes lower than the holding current, the SIDAC
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K1V10
K1V11
K1V12
K1V15
K1V14
K1V16
K1V18
K1V22
shockley diode
shockley diode applications
shockley
SIDAC K1V
k1v8
diode k1v
sidac
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D20XBD
Abstract: No abstract text available
Text: - j'j v V ÿ 'C B rid g e D io d e î / y ^ n / ' f y ^ ' f y M t - F Single In-line Package O U T L IN E D IM E N S IO N S D20XB TO 800V 20A 45 £1 •»sü siP A ’y ' r - y •U L1S W UL File No,E 1 4 2 4 2 2 • m n • S fÎJ E E x n H I fsm RATING S
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D20XB
50HzIES®
50HZJEKS-,
J514-5
D20XBD
D20XBD
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KIV* diode
Abstract: marking 77s
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV i <; i a 1 1 Mr v • HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm
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2SJ412
O-22QFL
--60V)
--16A
KIV* diode
marking 77s
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TC74HC02AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC02AP, TC74HC02AF, TC74HC02AFN QUAD 2 -INPUT NOR GATE Note The JEDEC SOP (FN) is not available in Japan. The TC74HC02A is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.
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TC74HC02AP/AF/AFN
TC74HC02AP,
TC74HC02AF,
TC74HC02AFN
TC74HC02A
14PIN
DIP14-P-300-2
14PIN
200mil
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PCF 7953
Abstract: J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code
Text: UM0877 User manual 1.4 kW digital power factor corrector based on the STM32F103ZE Introduction This system has been designed to evaluate the capabilities of the high-density STM32F103ZE microcontroller to perform a digital power factor corrector. An application
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UM0877
STM32F103ZE
STM32F103ZE
STM32
PCF 7953
J-Link-ARM-KS
viper12a application note
viper12 design
AN3165
smd code capacitor color
lcd inverter board schematic
tyco igbt
sine wave inverter schematic and firmware
SMD CAPACITORS color code
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74HC04AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC04AP, TC74HC04AF, TC74HC04AFN HEX INVERTER Note The JEDEC SOP (FN) is not available in Japan. The TC74HC04A is a high speed CMOS IN V ER TER fabricated with silicon gate C2MOS technology.
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TC74HC04AP/AF/AFN
TC74HC04AP,
TC74HC04AF,
TC74HC04AFN
TC74HC04A
14PIN
DIP14-P-300-2
14PIN
200mil
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CS-5208-1T3
Abstract: No abstract text available
Text: CS-5208-1 lì CS-5208-1 8A LDO 3-Pin Adjustable Linear Regulator Features D escription The CS-5208-1 linear regulator pro vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis tors to set the output voltage and
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CS-5208-1
O-220
CS-5208-1T3
O-220
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si2kc20
Abstract: 2SC3262 S5K020 KIV24 KIV22 KIV26 KIV6 KIV-6 S5KC20H S5KC20R
Text: Tb DE 1 0 T 5 3 S 1 S DD0D17Ö 3 A t t i l i ? « SEMICONDUCTOR T E SHINDENGEN - 0 3 - 0 / A R ISTO-CRAFT -J -P 7 , h u * / * y ni lo A & DIK20 DIK40 DIK20H S2K20 S2K40 S2K20H S3K40 S6K20 S6K40 S6K20H 0.6 1.2 1.8 6 V rm (V) 200 400 200 200 400 200 400 200
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0T53S1S
DD0D17Ã
DIK20
DIK40
DIK20H
S2K20
S2K40
S2K20H
S3K40
S6K20
si2kc20
2SC3262
S5K020
KIV24
KIV22
KIV26
KIV6
KIV-6
S5KC20H
S5KC20R
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BF908 Application Note
Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Text: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS
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RNR-T45-97-F-805
12Vtypes
BF998,
BF908
BF1100,
OT143)
BF998R,
BF908R
BF1100R,
OT143R)
BF908 Application Note
BF998
bf1109
dual-gate
philips rf mosfets
RGG20
mosfets fl philips
TRANSISTOR mosfet 9V
BF909R
JBT SWITCH
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Untitled
Abstract: No abstract text available
Text: TO SHIBA SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE <;r;finnniY? Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM = 6 0 0 0 V a r> • • • • Peak Turn-Off Current Critical Rate of Rise of On-State Current : di /d t = 500A//js
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SG6000JX27
00A//js
1250C
--24V,
--6000A,
--4000V
600mA
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Untitled
Abstract: No abstract text available
Text: General Information The Teccor SIDACtor is a solid state transient voltage protector designed for use in telephony, data, and some AC applications. The SIDACtor is a bidirectional device that is normally connected to the high side of a circuit and common. The
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JW-22CU
Abstract: diode KIV 63 JW212 jw-2pg E2J zener diode ZW-101PG1 JW20H jw-13pg diode KIV 62 ZW-160RS1
Text: Version 1.7 Produced in May 1998 Sharp Programmable Controller New Satellite User's Manual * Hardware version SHARP JW20 ä Is ! “ 3 L_.J . 1 ì : ~ i © : — JW20H We thank you for your purchase of the SHARP programmable controller JW20H. This booklet user's manual, hardware version explains mainly the JW20H's hardware; the
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JW20H
JW20H.
JW20H
JW-22CU
diode KIV 63
JW212
jw-2pg
E2J zener diode
ZW-101PG1
jw-13pg
diode KIV 62
ZW-160RS1
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