DIODE JV3 Search Results

Contextual Info: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*

Contextual Info: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen-free type These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e DF15J C 10 100 V 15A Feature • SMD ' SM D 1Low lR=0.6mA • f ilR = 0 .6 m A • i» # îê « b c u 1 Resistance for thermal run-away : <U • /Jv3ü*3iES* 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

DS-221605

Contextual Info: Formosa MS BAT54 / BAT54A / BAT54C / BAT54S SMD Small Signal Schottky Diode List List. 1 Package outline. 2

BAT54c kl3 l43

Abstract: SMD kl4 smd diode marking code jv3 smd diode code B6 smd diode L44 diode SMD MARKING CODE kl4 diode SMD MARKING CODE kl2 SMD MARKING CODE KL3 KL1 SMD SOT23 KL3 SMD diode
Contextual Info: Formosa MS BAT54 / BAT54A / BAT54C / BAT54S SMD Small Signal Schottky Diode List List. 1 Package outline. 2

Contextual Info: Formosa MS BAT54 / BAT54A / BAT54C / BAT54S SMD Small Signal Schottky Diode List List. 1 Package outline. 2

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating

ERC13

Abstract: diode A44
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3 .0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #- 9- - • 'JV3 2 .!§ S • JSfflS14 . Hi gh surge cu rren t ■ f c iv • Marking C om pact size, lig h tw e ig h t

jv3 Marking

Abstract: JV3 diode kl3 diode WSD421 WSD425 JV33 jv3 15
Contextual Info: WSD421 WSD425 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208

transistor LD3 SOT-23

Contextual Info: BAT54, BAT54A / C / S SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-23 MECHANICAL DATA • Case: SOT-23 Plastic

BAT-54A

Abstract: BAT54A
Contextual Info: BAT54, BAT54A / C / S SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-23 MECHANICAL DATA • Case: SOT-23 Plastic

1N3595AUS

Abstract: 1N3595US JANKCB1N3595 JANTXV 1N3595 equivalent 1N3595-1 1N3595UR-1 1n3595us-1 1N3595A-1 j3595 JS3595A
Contextual Info: INCH-POUND MIL-PRF-19500/241M 25 January 2010 SUPERSEDING MIL-PRF-19500/241L 10 June 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 2010. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED

Contextual Info: SCHOTTKY BARRIER DIODE KSQ60A03LE KSQ60A03LB s o a /s o v F E A TU R E S T at o S im ila r y/34IWS <i.i34jd a |*~15516021 to TO-247AC (TO-3P Case S 3( 209) nm s] o L o w F o rw a rd V o ltag e D rop O L ow P o w er Loss, H igh Efficiency O H igh S u rg e C apability

1RFZ34A

Abstract: IRFZ344 1RFZ34 IRFZ34A
Contextual Info: IRFZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV0SS = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 m A M ax. @

Contextual Info: IRF750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ ^DS on = 0 .3 £2 lD * 15 A Lower Leakage Current : 10 jiA {M ax.) @ VDS = 400V

E86015

Abstract: E86015 LR-38486 C3-A30/24VDC RELECO C3-A30 FX 24 VDC LR38486 C3-A30FX vde 0435 c250 delay on timer vde 0435 c250 Releco C3-A3 C3-A30, RELECO
Contextual Info: b ^ e O i- S Ô U 9S 0 -a iA I s A e ia y ^ . M o |B i4 s n p u | a aJ - L 'L - \c l 6 Releco Industrial Relays Plug In Relays • Octal and 11 -pin plug-in • 2 and 3 pole Sensitive Relays • 1, 2 and 3 pole • 250, 500 and 800 mW coil Magnetic Latching Relays

KL3 SMD diode

Abstract: diode sot-23 marking AG
Contextual Info: Small Signal Schottky Diodes CDBT-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device SOT-23 Features -Design for mounting on small surface. -High speed switching application, circuit protection. 0.122 3.10 0.106(2.70) 3 0.055(1.40) -Low forward voltage drop.

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Adjustable PC Power Supply Schematic Diagram

Abstract: MAX4332 MBRS130LT3 STPS2L25U 10BQ040 MAX1636 MAX1636CPUEVKIT JV3 diode THCR50E1E106ZT
Contextual Info: MAX1636 CPU Supply Evaluation Kit The MAX1636 CPU supply evaluation kit EV kit circuit is intended for converting high-voltage battery power into a low-voltage supply rail for next-generation notebook CPU cores. The output is digitally adjustable between 1.25V and 2V in 50mV increments. The input

STPS2L25U

Abstract: 10BQ040 MAX1636 MAX1636CPUEVKIT MBRS130LT3 594D477X000 99279 MAX4332
Contextual Info: MAX1636 CPU Supply Evaluation Kit The MAX1636 CPU supply evaluation kit EV kit circuit is intended for converting high-voltage battery power into a low-voltage supply rail for next-generation notebook CPU cores. The output is digitally adjustable between 1.25V and 2V in 50mV increments. The input

10BQ040

Abstract: MAX1636 MAX1636CPUEVKIT MBRS130LT3 STPS2L25U MAX4332
Contextual Info: MAX1636 CPU Supply Evaluation Kit The MAX1636 CPU supply evaluation kit EV kit circuit is intended for converting high-voltage battery power into a low-voltage supply rail for next-generation notebook CPU cores. The output is digitally adjustable between 1.25V and 2V in 50mV increments. The input

Contextual Info: Leshan Radio Co.Ltd Schottky Barrier Diodes LBAT54LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and