Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*
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DE10SC3L
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Untitled
Abstract: No abstract text available
Text: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen-free type These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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BAT54RGH
OT-23
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e DF15J C 10 100 V 15A Feature • SMD ' SM D 1Low lR=0.6mA • f ilR = 0 .6 m A • i» # îê « b c u 1 Resistance for thermal run-away : <U • /Jv3ü*3iES* 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^
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DF15J
DF15JC10
J532-1
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DS-221605
Abstract: No abstract text available
Text: Formosa MS BAT54 / BAT54A / BAT54C / BAT54S SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAT54
BAT54A
BAT54C
BAT54S
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
DS-221605
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BAT54c kl3 l43
Abstract: SMD kl4 smd diode marking code jv3 smd diode code B6 smd diode L44 diode SMD MARKING CODE kl4 diode SMD MARKING CODE kl2 SMD MARKING CODE KL3 KL1 SMD SOT23 KL3 SMD diode
Text: Formosa MS BAT54 / BAT54A / BAT54C / BAT54S SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAT54
BAT54A
BAT54C
BAT54S
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
BAT54c kl3 l43
SMD kl4
smd diode marking code jv3
smd diode code B6
smd diode L44
diode SMD MARKING CODE kl4
diode SMD MARKING CODE kl2
SMD MARKING CODE KL3
KL1 SMD SOT23
KL3 SMD diode
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Untitled
Abstract: No abstract text available
Text: Formosa MS BAT54 / BAT54A / BAT54C / BAT54S SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAT54
BAT54A
BAT54C
BAT54S
JESD22-A102
MIL-STD-750D
METHOD-1051
METHOD-1056
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating
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STO-220
DF40SC3L
40SC3L
10000iâ
J532-1
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ERC13
Abstract: diode A44
Text: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3 .0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #- 9- - • 'JV3 2 .!§ S • JSfflS14 . Hi gh surge cu rren t ■ f c iv • Marking C om pact size, lig h tw e ig h t
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ERC13
JSfflS14
diode A44
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jv3 Marking
Abstract: JV3 diode kl3 diode WSD421 WSD425 JV33 jv3 15
Text: WSD421 WSD425 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208
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WSD421
WSD425
100mAMPERES
40VOLTS
MIL-STD-202
OT-23
OT-23
jv3 Marking
JV3 diode
kl3 diode
WSD421
WSD425
JV33
jv3 15
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transistor LD3 SOT-23
Abstract: No abstract text available
Text: BAT54, BAT54A / C / S SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-23 MECHANICAL DATA • Case: SOT-23 Plastic
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BAT54,
BAT54A
OT-23
OT-23
J-STD-020D
2002/95/EC
OT-323
OT-523
transistor LD3 SOT-23
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BAT-54A
Abstract: BAT54A
Text: BAT54, BAT54A / C / S SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-23 MECHANICAL DATA • Case: SOT-23 Plastic
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BAT54,
BAT54A
OT-23
OT-23
J-STD-020D
2002/95/EC
BAT-54A
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1N3595AUS
Abstract: 1N3595US JANKCB1N3595 JANTXV 1N3595 equivalent 1N3595-1 1N3595UR-1 1n3595us-1 1N3595A-1 j3595 JS3595A
Text: INCH-POUND MIL-PRF-19500/241M 25 January 2010 SUPERSEDING MIL-PRF-19500/241L 10 June 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 2010. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED
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MIL-PRF-19500/241M
MIL-PRF-19500/241L
1N3595-1,
1N3595US,
1N3595UR-1,
1N3595A-1,
1N3595AUS,
1N3595AUR-1,
MIL-PRF-19500.
1N3595AUS
1N3595US
JANKCB1N3595
JANTXV 1N3595 equivalent
1N3595-1
1N3595UR-1
1n3595us-1
1N3595A-1
j3595
JS3595A
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE KSQ60A03LE KSQ60A03LB s o a /s o v F E A TU R E S T at o S im ila r y/34IWS <i.i34jd a |*~15516021 to TO-247AC (TO-3P Case S 3( 209) nm s] o L o w F o rw a rd V o ltag e D rop O L ow P o w er Loss, H igh Efficiency O H igh S u rg e C apability
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KSQ60A03LE
KSQ60A03LB
O-247AC
KSQ60A.
KSQ60A03LB
0V090SX
31S0V09
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1RFZ34A
Abstract: IRFZ344 1RFZ34 IRFZ34A
Text: IRFZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV0SS = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 m A M ax. @
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IRFZ34A
1RFZ34A
1RFZ34A
IRFZ344
1RFZ34
IRFZ34A
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Untitled
Abstract: No abstract text available
Text: IRF750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ ^DS on = 0 .3 £2 lD * 15 A Lower Leakage Current : 10 jiA {M ax.) @ VDS = 400V
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IRF750A
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E86015
Abstract: E86015 LR-38486 C3-A30/24VDC RELECO C3-A30 FX 24 VDC LR38486 C3-A30FX vde 0435 c250 delay on timer vde 0435 c250 Releco C3-A3 C3-A30, RELECO
Text: b ^ e O i- S Ô U 9S 0 -a iA I s A e ia y ^ . M o |B i4 s n p u | a aJ - L 'L - \c l 6 Releco Industrial Relays Plug In Relays • Octal and 11 -pin plug-in • 2 and 3 pole Sensitive Relays • 1, 2 and 3 pole • 250, 500 and 800 mW coil Magnetic Latching Relays
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KL3 SMD diode
Abstract: diode sot-23 marking AG
Text: Small Signal Schottky Diodes CDBT-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device SOT-23 Features -Design for mounting on small surface. -High speed switching application, circuit protection. 0.122 3.10 0.106(2.70) 3 0.055(1.40) -Low forward voltage drop.
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CDBT-54/S/C/A-G
OT-23
OT-23,
MIL-STD-750,
CDBT-54-G
CDBT-54S-G
QW-BA002
KL3 SMD diode
diode sot-23 marking AG
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TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126
TRANSISTOR AH-16
TRANSISTOR bH-16
equivalent of transistor bc212 bc 214
transistor marking code SOT-23 2FX
2907A PNP bipolar transistors
SILICON TRANSISTOR FS 2025
marking JV SOD323
bf245 replacement
GI 312 diode
msd601
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marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
marking 513 SOD-323
transistor marking code SOT-23 2FX
BC449 equivalent
DTD113
BC548 hie hre hfe steel package
MPSW45A replacement
BC449A equivalent
2n4401 free transistor equivalent book
power tmos
BF256
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CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
CBF493S
BC337 hie hre hfe
BC449 equivalent
transistor marking code SOT-23 2FX
marking 513 SOD-323
bc213 equivalent
MECL 10000
bc237c equivalent
diode Marking code jv3 f
BAV70 SOT-23 JJ
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Adjustable PC Power Supply Schematic Diagram
Abstract: MAX4332 MBRS130LT3 STPS2L25U 10BQ040 MAX1636 MAX1636CPUEVKIT JV3 diode THCR50E1E106ZT
Text: MAX1636 CPU Supply Evaluation Kit The MAX1636 CPU supply evaluation kit EV kit circuit is intended for converting high-voltage battery power into a low-voltage supply rail for next-generation notebook CPU cores. The output is digitally adjustable between 1.25V and 2V in 50mV increments. The input
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MAX1636
MAX1636
Adjustable PC Power Supply Schematic Diagram
MAX4332
MBRS130LT3
STPS2L25U
10BQ040
MAX1636CPUEVKIT
JV3 diode
THCR50E1E106ZT
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STPS2L25U
Abstract: 10BQ040 MAX1636 MAX1636CPUEVKIT MBRS130LT3 594D477X000 99279 MAX4332
Text: MAX1636 CPU Supply Evaluation Kit The MAX1636 CPU supply evaluation kit EV kit circuit is intended for converting high-voltage battery power into a low-voltage supply rail for next-generation notebook CPU cores. The output is digitally adjustable between 1.25V and 2V in 50mV increments. The input
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MAX1636
MAX1636
STPS2L25U
10BQ040
MAX1636CPUEVKIT
MBRS130LT3
594D477X000
99279
MAX4332
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PDF
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10BQ040
Abstract: MAX1636 MAX1636CPUEVKIT MBRS130LT3 STPS2L25U MAX4332
Text: MAX1636 CPU Supply Evaluation Kit The MAX1636 CPU supply evaluation kit EV kit circuit is intended for converting high-voltage battery power into a low-voltage supply rail for next-generation notebook CPU cores. The output is digitally adjustable between 1.25V and 2V in 50mV increments. The input
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MAX1636
MAX1636
10BQ040
MAX1636CPUEVKIT
MBRS130LT3
STPS2L25U
MAX4332
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Untitled
Abstract: No abstract text available
Text: Leshan Radio Co.Ltd Schottky Barrier Diodes LBAT54LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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LBAT54LT1G
OT-23
3000/Tape
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