1N4448
Abstract: L4448
Text: L L 4448 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4448.
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DO-35
1N4448.
OD-80)
100mA
150OC
100MHz,
1N4448
L4448
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MINI-MELF DIODE BLACK CATHODE
Abstract: F 407 Diode
Text: L L 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the
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150mA
DO-35
1N4448.
OD-80C)
100mA
150OC
100MHz,
MINI-MELF DIODE BLACK CATHODE
F 407 Diode
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Untitled
Abstract: No abstract text available
Text: 1N 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4448.
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150mA
LL4448.
DO-35
150OC
100uA
100MHz,
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Untitled
Abstract: No abstract text available
Text: 1N 4448 Small-Si gnal D i ode Fast Swi tchi ng D i ode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4448. Mechanical Data Case: DO-35 Glass Case
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LL4448.
DO-35
500erwise
150OC
100uA
100MHz,
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1N4448
Abstract: LS4448 diode 4448
Text: LS4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in QuadroMELF case especially LS-34 suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448. QuadroMELF Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter
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LS4448
LS-34
1N4448.
1N4448
LS4448
diode 4448
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1N 2002 diode
Abstract: 1N4448 LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
1N 2002 diode
1N4448
LL4448
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Untitled
Abstract: No abstract text available
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
Characte00
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1N 2002 diode
Abstract: diode datasheet 4448 1N4448 LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
1N 2002 diode
diode datasheet 4448
1N4448
LL4448
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1N4448
Abstract: LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand This diode is also available in MiniMELF case with the type designation LL4448. XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35
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1N4448
LL4448.
DO-35
1N4448
LL4448
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Untitled
Abstract: No abstract text available
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
1N4448
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1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
1N4448
1N4448
LL4448
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1N4448
Abstract: LS4448
Text: LS4448 SILICON EPITAXIAL PLANAR DIODE LS-34 fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LS4448
LS-34
1N4448
1N4448
LS4448
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1N4448
Abstract: LS4448
Text: LS4448 SILICON EPITAXIAL PLANAR DIODE LS-34 fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LS4448
LS-34
1N4448
1N4448
LS4448
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1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage
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LL4448
1N4448
1N4448
LL4448
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1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
LL-34
1N4448
1N4448
LL4448
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1N4448
Abstract: jy 1n4448 LL4448 MARK 1N p5001
Text: 1N 4448 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 This diode is also available in MiniMELF case with type desigantion LL4448. Cathode M ark max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 °C
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LL4448.
DO-35
1N4448
1N4448
jy 1n4448
LL4448
MARK 1N
p5001
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Untitled
Abstract: No abstract text available
Text: IMBD4448 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching diode in case SOT-23, especially suited for autom atic insertion. ♦ • j| This diode is also available in other case :f styles including: the DO-35 case with the
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IMBD4448
OT-23
OT-23,
DO-35
1N4448,
LL4448,
1N4448W
OT-23
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Untitled
Abstract: No abstract text available
Text: Central IIV Sem i c o n d u c t o r C o r p . C M PD 4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface
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CMPD4448
OT-23
100mA
100i2,
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1n4148
Abstract: 1n916 1N4606 1N4150 diode 1N916 1n4148 general diode 1n4153 914-R
Text: 1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 . 5 ± 0.1 Features • available in DO-35 package
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1N4148
1N914
1N916
1N4150
1N4153
1N4448
1N4606
DO-35
1n916
1N4606
diode 1N916
1n4148 general diode
1n4153
914-R
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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LL4148
Abstract: LL4448 LL4148 dynamic resistance
Text: LL4148/LL4448 Surface M o u n t Sw itching Diodes S M A L L S IG N A L S C H O T T K Y D IO D E S 150 in A M P E R E S 100 V O L T S Features: “ Silicon Epitaxial Planner Diode 'F ast S w itching Diodes “ 5 0 0 mW Power D issipation M echanical D ala:
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LL4148/LL4448
OD-80)
LL4148/LI
LL4148
LL4448
LL4148 dynamic resistance
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