DIODE HER 104 Search Results

16N60G

Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
Contextual Info: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

HER 107 diode

Abstract: 2SK3772-01 2SK3772 sec1818
Contextual Info: DATE CHECKED Oct.-02-'03 CHECKED Oct.-02-'03 NAME DWG.NO. This mat erial and the information her ein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 240 V RDS on ,max 14 Ω ID 0.1 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101

Contextual Info: HER101 – HER108 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

HER 300 diode

Abstract: 101G 103G 105G 106G HER101G HER108G her105g diode
Contextual Info: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Contextual Info: BSS169 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS on ,max 12 Ω 0.09 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23

HER 107 diode

Abstract: DIODE HER108 HER 103 diode Diode HER 107 HER101 HER101-T3 HER101-TB HER104 HER105 HER108
Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 • Qualified according to AEC Q101

Contextual Info: BSS139 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS on ,max 30 Ω I DSS,min 0.03 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23

Contextual Info: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 27 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDH10S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 36 nC • Temperature independent switching behavior IF; TC< 130 °C

D10S60C

Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D06S60C

Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D12G60

Abstract: diode smd ED 17
Contextual Info: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSS816NW OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 160 mΩ V GS=1.8 V 240 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101

Contextual Info: BSS205N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 2.5 ID A • Avalanche rated • Qualified according to AEC Q101

DIODE ED 34

Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23