diode marking gg 2a
Abstract: diode gg 2a BAR63-02V gg 2a SC79
Text: BAR63-02V Silicon PIN Diode PIN diode for high speed switching 2 of RF signals Low forward resistance, small inductance Very low capacitance For frequencies up to 3 GHz 1 VES05991 Type Marking Pin Configuration Package BAR63-02V GG 1=C SC79 2=A Maximum Ratings
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BAR63-02V
VES05991
Aug-28-2001
100MHz
EHD07139
EHD07138
EHD07171
diode marking gg 2a
diode gg 2a
BAR63-02V
gg 2a
SC79
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st3043
Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
LOW-POWER SILICON NPN
40352
2N773
bsy11
2S001
2SC859
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Bendix Transistors
Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
Bendix Transistors
2N1149
RCA 2n1184a
2N1152
2N1151
2N1150
RCA 2N1174
transitron
Emihus
2N1193
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Newmarket Transistors
Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
Newmarket Transistors
sgs-ates transistors
2G108
2AC128-01
2N174 RCA
2BD124
2G381
2N109
2G271
2N123
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b0745
Abstract: 2n3772 solitron rcs258 BDX40 MRF428A RCS25 MRF422 2SD1213R
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 163-04A 163-04SPC 2N6257 163•04 163-04 MJ6257 1723-0405 1723-0410 ~~b~~14 25 30 164-04A 164-04SPC 164-04 164-04 ST28138 SDT3201 SDT44331 SDT44331 ~~~J~r 35 40 80745 B0745 BD745 2N1823 2N1823 2N1823 2N2123
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SDT8045
J02053
8UP30
2SD1213Q
2SD1213R
2SC2510
SD1450
MRF422
b0745
2n3772 solitron
rcs258
BDX40
MRF428A
RCS25
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300 volt 5 ampere transistor
Abstract: PS12038 10 amp igbt 1000 volt analog inverters circuit diagram igbt h bridge application PS1203 CBW20
Text: PS12038 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Application Specific IPM 25 Amperes/1200 Volts A D E D F G M SQ PINS H QQ PP C J VV K L 24 21 19 17 15 13 11 9 7 18 16 14 12 10 8 RR (4 PLACES)
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PS12038
Amperes/1200
CBW20
CBV22
CBU24
300 volt 5 ampere transistor
PS12038
10 amp igbt 1000 volt
analog inverters circuit diagram
igbt h bridge application
PS1203
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Untitled
Abstract: No abstract text available
Text: 2009-03-04 Hybrid Pulsed Laser Diode with Integrated Driver Stage 14 W Peak Power Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung Version 1.0 SPL LL85 Features: Besondere Merkmale: • Low cost, small size plastic package • Integrated FET and capacitors for pulse control
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EL7104C.
D-93055
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diode GG 64
Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO
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2Gl024
2N2512
2G383
2Gl025
2Gl025
diode GG 64
diode GG 71
AF118
Low-Power Germanium PNP
ACY39
2N240
2G201
2G302
2N3604
ACY24
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Low-Power Germanium PNP
Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237
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2G524
2Nl057
2N1371
2N1375
ACY16
TRS50
TR650
2N1997
2N597
Low-Power Germanium PNP
2N1377
TR526
2N524A
2N3428
2n525a
diode GG 64
2N1432
AC123
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OC139
Abstract: Low-Power Germanium NPN 2N1694 2N557 2N558 2N147 2N212 2N576 2N634 TR07
Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer V BR CBO Ie Max (A) hFE (V) fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC) Toper Max eC) 2.0m 100 S TO-5 2.5m 100 J 100 J 100 S 100 S 100 J 100 J TO-l TO-5 TO-22var TO-5
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2N445
NKT773
2N292A
2N446
2N558
2N165
2N1288
2N447
2N172
2N148
OC139
Low-Power Germanium NPN
2N1694
2N557
2N147
2N212
2N576
2N634
TR07
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mallory 150m
Abstract: AC127 Low-Power Germanium NPN sk3010 2N366 germanium ac127 ASY28 npn 10 a 50 v germanium AC127-01 germanium
Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max lA) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CEO (A) (V) PD Max (W) Derate at Toper (WrC) eC) Max Package Style D vic sUnder 1 Watt, (Co nt' d) 5 • 10 2N438A TA167 TA167 TA167
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2N438A
TA167
2N365
ASY28
2N167A
2SC128
mallory 150m
AC127
Low-Power Germanium NPN
sk3010
2N366
germanium ac127
npn 10 a 50 v germanium
AC127-01
germanium
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2SA1370E
Abstract: 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII
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BF470S
BF472
BF472S
HA7725
HA7734
HA7737
HA7723
2SA1370E
2SA13600
HITACHI AXIAL DIODE
diode *7723
BCY77VII
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2S877
Abstract: diode GG 14 2S8370 Low-Power Germanium PNP AF201U TA269 2N270 2s875 2G108 2N404
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2S843 MA899 MA899 TA269 TA269 TA269 2N404 2N1370 2N1374 2N1382 ~~~~g~A 15 20 2N1287 2N658 1340 GT20 GT20 GT83 GT83 TAM14 +~~: 25 30 TA14 TR18 TA18 TR18 2S8185 2S8111 2N249 2N291 ~~~~OU 35 -40 AF201U 2N131
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2S843
MA899
TA269
2N404
2N1370
2N1374
2N1382
2S877
diode GG 14
2S8370
Low-Power Germanium PNP
AF201U
2N270
2s875
2G108
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KT933
Abstract: 6ae diode DTL3502 KT626D KT626A 2sa1403d kt933B KELTRON diode MXR5583 KT820V1
Text: POWER SILICON PNP Item Part Number Number I C 5 10 15 20 Manufacturer See Index See Index See Index SemiconTech SemiconTech See Index See Index See Index See Index See Index TRSP4504 TRSP4504S TRSP4505 TRSP4505S TRSP4754S TRSP4755S TRSP5014 TRSP5014S TRSP5015
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TRSP3505
TRSP3514S
TRSP3515S
SRSP4014
SRSP4014S
TRSP4014
TRSP4014S
TRSP4015
TRSP4015S
TRSP4254S
KT933
6ae diode
DTL3502
KT626D
KT626A
2sa1403d
kt933B
KELTRON diode
MXR5583
KT820V1
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2SC1766C
Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133
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2SC1766A
2SC1766B
2SC1766C
2SC1766D
MM1941
MPS6512
MPS6513
TP5377
TP5376
HSE144
BFY16
2SC1335
DIODE 10N 40D
2SC306
2N2161
2N2210
2N1410A
2N1410
2N2197 semelab
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PDF
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2SA144
Abstract: 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107
Text: LOW-POWER GERMANIUM PNP Item Number Part Number -10 TR64 2N964A GT1606 GT1606 2SA156 OC45 2SA201 NKT143 NKT144 OC43N ~~~~g 15 20 2G345 2G345 2N2401 2N779 2N779A MA113 MA113 MA116 ~~~d: 25 30 NKT261 NKT271 2SA202 2SA202 2N606 2SA160 AC107 AC107 ~~~~1 35 40
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O-22var
2SA144
2N2416
Low-Power Germanium PNP
2G309
OC45
2SA144 to-92s
GT1606
ac107
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PDF
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PS12038
Abstract: 3 phase IGBT inverter CBW20 IPM25 ic 4052 block diagram CBU 406 uvd 110
Text: PS12038 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Tentative Intellimod Module Application Specific IPM 25 Amperes/1200 Volts A D E D F G M SQ PINS H QQ PP C J VV K L 24 21 19 17 15 13 11 9 7 18 16 14 12 10 8 RR
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PS12038
Amperes/1200
CBW20
CBV22
CBU24
PS12038
3 phase IGBT inverter
IPM25
ic 4052 block diagram
CBU 406
uvd 110
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PDF
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b0239c
Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514
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OT5503
OT5903
2N6409
2S01516
b0239c
diode GG 66
diode 2U 66
MEAB
to-53
2U 39 diode
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PDF
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BA204
Abstract: BA-204
Text: TELEFUNKEN ELECTRONIC 17E » • ÖTEDO^b OOD'ÌTIB 5 H A L GG BA 204 IM electronic Creative Technologies Silicon Fpitaxial Planar Diode Applications: General purpose Dimensions in mm Cathoda =>26 1 1 <3.9 g<ass -—' - n u— Standard glass case
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OCR Scan
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Diode BAY 93
Abstract: a9 sot 23 diode
Text: TELEFUNKEN ELECTRONIC 17E D Û00S753 b • AL GG ■ BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880 JEDEC DO 35
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OCR Scan
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00S753
Diode BAY 93
a9 sot 23 diode
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PDF
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smd diode marking zf
Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •
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OCR Scan
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DF10SC4M
11-PKG
STO-220
J532-1)
smd diode marking zf
DF10SC4M
smd diode marking c
MTKM
Diode 1_b SMD
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode W tm D5S9M OUTLINE 90V 5A Feature • Tj=150°C • Tj= 1 5 0°C • P rrsm • 71 [ Æ - J U K Rating • Full M o ld e d Main Use • S w itc h in g R eg u lator • DC/DC □ V A'—^ • D C /D C C o n ve rte r •mm, i f - A .oA d gg
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OCR Scan
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waveii50Hz
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PDF
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U860 diode
Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
Text: A S E A b Ro u n /abb AB seuicon D I 00MÛ3DÛ □OGOlhl 7 * T -o \- Netzdioden Vrrm 1 Diode I 1 DS Ki DSA 1 1 T yp /type 1 I I Rectifier diodes S21 - I I 1 I FAV1 400-11 KC, NC 400-14 KC, NC 400-17 KC, NC 400-20 KC, NC 400-23 KC.NC ft If s m If a v m A °C A
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OCR Scan
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00Mfl3Dfl
To-50Â
400-11KC,
D2950
U860 diode
diode U860
diode avalanche DSA
U860
tc 40138
DIODE DSA 18
diode avalanche DSA VRRM 2300
DSA VRRM 2300
G DSA 908-44 A G
diode avalanche DSA 603
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IRFG5110
Abstract: 9437B PN channel MOSFET 10A tp 26c 437B MO-036AB KJJ 15 X1DV
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS COMBINATION INI AND P CHANNEL 8 EACH] POWER MOSFETs IRFG5110 o 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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OCR Scan
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IRFG5110
IRFG5110
9437B
PN channel MOSFET 10A
tp 26c
437B
MO-036AB
KJJ 15
X1DV
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PDF
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