DIODE GE 601 Search Results

PESDXL4UG

Abstract: marking JS SOT353
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge MBD127 PESDxL4UG series Low capacitance quadruple ESD protection diode array in SOT353 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package

Diode SY 356

Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
Contextual Info: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten

Contextual Info: V23990-P769-A60-PM V23990-P769-A60Y-PM datasheet flow PIM 2 1200 V / 75 A Features flow 2 housing ● 3~rectifier,BRC,Inverter, NTC ● Very Compact housing, easy to route ● Mitsubishi IGBT and FWD Target Applications Schematic ● Motor Drives ● Power Generation

Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C G E VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF D-Pak n-channel

Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C C G G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications

B50C

Abstract: EH60 EH6004B EH6010B EH7502B EH7506B EH7510B
Contextual Info: Sînqie Phase Brida e Modules EH60, EH75 Dim. Inches Minimum _ A B C z K L M EH 6002S* E H 6004B « EH60068* EH e oo ae « EH 6010B» E H 6012B * _ 27.94 57.15 23.62 44.19 60.96 24.13 44.70 47.32 47.92 12.57 8.25 5.46 32.25 12.83 8.50 5.71 33.02 .198 .208

Contextual Info: AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses

transistor model h1a

Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
Contextual Info: IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE on typ.  1.7V G D2-Pak IRGS4045DPbF E n-channel Applications • Appliance Motor Drive  Inverters

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

SDT-S-103DMR

Contextual Info: SDT-S-103DMR,601 Product Details Mid-Ran ge PC Board Re lays Previous 1 . 11 [12] 13 14 15 . 20 Next Quick Links Converted to EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products

DIODE GE 601

Contextual Info: SDT-S-106DMR,601 Product Details Mid-Ran ge PC Board Re lays Previous 1 . 11 12 [13] 14 15 . 20 Next Quick Links Converted to EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

116765-000

Abstract: 1162930000
Contextual Info: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is

IRF 504

Abstract: 005 418 irf 144
Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC20UD-SPBF

Contextual Info: PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A

32N170AH1

Abstract: 32N17 PLUS247 6018A S3670 32n170
Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A

AN-994

Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Contextual Info: PD -9.1598 PRELIMINARY IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

Contextual Info: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2 S K2 601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 1 5 .9 MAX. Low Drain-Source ON Resistance

IRGS4715D

Contextual Info: IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 8A G E • Industrial Motor Drive • UPS • Solar Inverters

diode sv 03

Abstract: MARK COLOR CODE 1S2359 VR-60 VR-61 color code diode
Contextual Info: SILICON R E C T IF IE R DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) SV-1 Brown 500 C urre nt for 0 .3 V ( L e s s than 5 0 / iA ) , 100m A ( L e s s than 1V) V oltage for S V -2 Red 150 C urrent for 1.2V ( L e s s than 50j«A),