IRGS4607DPBF Search Results
IRGS4607DPBF Price and Stock
Rochester Electronics LLC IRGS4607DPBFIGBT 600V 11A D2PAK |
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IRGS4607DPBF | Tube | 268 |
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Infineon Technologies AG IRGS4607DPBFIGBT 600V 11A 58W D2PAK |
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IRGS4607DPBF | Tube |
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IRGS4607DPBF | 450 | 278 |
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IRGS4607DPBF | 450 | 1 |
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IRGS4607DPBF | 143 Weeks | 50 |
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International Rectifier IRGS4607DPBF |
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IRGS4607DPBF | 200 |
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IRGS4607DPBF | 160 |
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IRGS4607DPBF | 872 | 1 |
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IRGS4607DPBF | 128 |
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IRGS4607DPBF Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IRGS4607DPBF | International Rectifier | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 11A 58W D2PAK | Original |
IRGS4607DPBF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C G E VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF D-Pak n-channel |
Original |
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF O-220AB O-220 250uAâ 100uAâ | |
Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C C G G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications |
Original |
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF O-220AB IRGR/S/B4607DPbF JESD47F) O-220 |