Untitled
Abstract: No abstract text available
Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,
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FJBE2150D
FDC655
FJBE2150D
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fairchild power bjt
Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver
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FJP2160D
fairchild power bjt
fdc6551
cascode mosfet switching
ESBC
j2160
J2160D
C 1008 y transistor
input output bjt npn transistor
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Untitled
Abstract: No abstract text available
Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition
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FJP2160D
FJP2160D
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c 945 TRANSISTOR equivalent
Abstract: FDC655 fairchild power bjt ignition drivers
Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,
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FJBE2150D
FDC655
c 945 TRANSISTOR equivalent
fairchild power bjt
ignition drivers
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Abstract: No abstract text available
Text: FQB55N10 / FQI55N10 N-Channel MOSFET D D ! " G S D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS ID ! FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous TC = 25°C Drain Current IDM Drain Current VGSS
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FQB55N10
FQI55N10
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Abstract: No abstract text available
Text: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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IRLM220A
OT-223
IRLM220ATF
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Abstract: No abstract text available
Text: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360
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MDB10S
E352360
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MDB6S
Abstract: MDB10S mdb8s
Text: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360
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MDB10S
E352360
MDB6S
mdb8s
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MDB6S
Abstract: DSA002422
Text: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification
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MDB10S
MDB6S
DSA002422
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MDB10SS
Abstract: No abstract text available
Text: MDB10SS 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S
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MDB10SS
MDB10S
E352360
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Untitled
Abstract: No abstract text available
Text: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360
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MDB10S
E352360
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Untitled
Abstract: No abstract text available
Text: MDB10SS 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S
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MDB10SS
MDB10S
E352360
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Untitled
Abstract: No abstract text available
Text: MDB10SS 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers Smaller Plastic Body vs MDB10S
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MDB10SS
MDB10S
E352360
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Untitled
Abstract: No abstract text available
Text: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360
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MDB10S
E352360
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Untitled
Abstract: No abstract text available
Text: FQPF17N40 N-Channel QFET MOSFET 400 V, 9.5 A, 270 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQPF17N40
O-220F
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Abstract: No abstract text available
Text: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA44N30
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Text: FQP2N90 N-Channel QFET MOSFET 900 V, 2.2 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQP2N90
O-220
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Untitled
Abstract: No abstract text available
Text: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA44N30
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Text: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is
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FQAF16N50
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Abstract: No abstract text available
Text: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA40N25
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Abstract: No abstract text available
Text: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA40N25
FQA40N25
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Abstract: No abstract text available
Text: FQA27N25 N-Channel QFET MOSFET 250 V, 27 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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Mosfet application note fairchild
Abstract: No abstract text available
Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Features Description • RDS on = 1.38 (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD5N50NZ
FDD5N50NZ
Mosfet application note fairchild
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dpak mosfet
Abstract: FDD3N50NZ
Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Features Description • RDS on = 2.1 (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD3N50NZ
dpak mosfet
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