hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN66
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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ZENER 6.2V DO-214AC
Abstract: No abstract text available
Text: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
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SML4728
SML4763A
DO-214AC
25ALS
ZENER 6.2V DO-214AC
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X9522
Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Text: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors
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X9520
L22329
X9522
FN8208
X9522
X9522V20I-A
X9522V20I-B
X9522V20IZ-A
X9522V20IZ-B
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Untitled
Abstract: No abstract text available
Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT30D100B
APT30D90B
APT30D80B
O-247AD
3000-sso
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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CLM185T2
Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q
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CLM185-2
CLM285-2
CLM385-2
CLM185
20yiA
CLM185T2
CLM285T2
CLM285d.
4432E
CLM285Y2
CLM385N2
CLM385T2
CLM385Y2
120PV
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Untitled
Abstract: No abstract text available
Text: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
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GL3201
Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun ed coil • Internal Zener diode regulated supply • Inherent high stability
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GL3201A/GL3202
GL3201A
GL3202
L3201A/GL3202
GL3201
GL3201A
GL3202
audio signal detector circuit
fm detector coil
audio rms detector
GL320
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ip olivetti cd
Abstract: GL100MD1MP1 GL100MD1
Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.
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ED-02157
GL100MD1MP1
ip olivetti cd
GL100MD1
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DIODE marking ED
Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Text: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.
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SC802-09
500ns,
110oC,
DIODE marking ED
marking ya
71A marking
GI 536 POWER
15X15
SC802-09
sc802
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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PS2002B
Abstract: NEC photo coupler PS2002 NEC PS2002B transistor 2002b PS2002B NEC PS200-2 nec reed relay
Text: NEC PHOTO COUPLER ELECTRON DEVICE PS2002B PHOTO COUPLER INDUSTRIAL USE - NEPOC SERIES - DESCRIPTION The PS2002B is an o p tic a lly coupled isolator containing a GaAsP lig h t em ittin g diode and an NPN silicon da rlingto n- connect ed phototransistor.
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PS2002B
PS2002B
NEC photo coupler
PS2002
NEC PS2002B
transistor 2002b
PS2002B NEC
PS200-2
nec reed relay
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EE-25 transformer
Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Text: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
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APT30D100B
APT30D90B
APT30D80B
O-247
O-247AD
EE-25 transformer
Transformer EE-25
Transformer EE-25 100
EE-25 200 6 transformer
CR diode transient
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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1LD5
Abstract: newark electronic tube Scans-0017346
Text: ILD5 TUNG-SOL 's DIODE PENTODE THE 1 L D 5 I S A D IO D E -A U D 1 0 PENTODE D ES IG N ED E S P E C I A L L Y FOR S E R V I C E AS A COMBINED DIODE DETECTOR AND PENTODE AUDIO A M P L I F I E R . THE DIODE PL A TE I S LOCATED AT THE NEGATIVE END OF THE F IL A M E N T .
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M8-210
1LD5
newark
electronic tube
Scans-0017346
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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1n2222 general diode
Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Text: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150
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1N2024
1N2025
1N202S
1N2027
1N2029
1N2030
1N2031
1N2128
1N2128A
1n2222 general diode
1N2222
1n22
1N2218
1N2219
0880
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DIODE RK 306
Abstract: tr/DIODE RK 306
Text: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.
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SD-503
SD-503B,
SD-503
DIODE RK 306
tr/DIODE RK 306
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TIES16A
Abstract: ceramic insulator
Text: I TEXAS OP TO EL EC T R O N I C S INC 10E D | 5=51=3=134 QDOOIDI t | «701 TIES16A Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. D ESIG N ED TO EM IT NEAR-INFRARED RADIENT ENERGY W HEN FO RW ARD BIA SED • High Output Power . . . 1 0 0 m W Min at 25 °C
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TIES16A
72-Mil-Diameter
01-inch
ceramic insulator
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1N 3000 DIODE
Abstract: 14R7 Scans-0017298 general electric
Text: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling
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ET-T745
1N 3000 DIODE
14R7
Scans-0017298
general electric
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12sR7
Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Text: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,
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12SR7
BB-21
CONNEC0000
ET-T392
12sR7
12sr7, tube
500 watts audio amplifier diagram
12sr7 tube
rs tube
Scans-0017290
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MJ10006
Abstract: No abstract text available
Text: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed
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MJ10006
MJ10007
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