hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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LN189S
LN189S
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs
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RM25HG-24S
20MIN.
ED 05 Diode
ED 03 Diode
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs
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RM50HG-12S
20MIN.
ED 05 Diode
ED 03 Diode
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UPRTR5V0U4D Preliminary DIODE I N T EGRAT ED QU AD U LT RA-LOW CAPACI T AN CE ESD PROT ECT I ON ̈ DESCRI PT I ON The UTC UPRTR5V0U4D is an integrated quad ultra-low capacitance ESD protection diode array. it uses UTC’s advanced
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100nA)
QW-R601-077
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Panasonic circuit breaker
Abstract: TPS2330 EEUFC1H471L IRF7413 TPS2331 SLVA116
Text: Application Report SLVA116 – May 2002 A FET OR-ing Circuit For Fault-Tolerant Power Systems Ed Jung PMP Systems Power ABSTRACT Fault-tolerant power systems commonly achieve redundancy by diode OR-ing the outputs of several power supply modules. The OR-ing circuit is inefficient if the diode forward
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SLVA116
TPS2331
Panasonic circuit breaker
TPS2330
EEUFC1H471L
IRF7413
SLVA116
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fire detector
Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).
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ED-95093
GL1F201
fire detector
100HZ
1U20
47PF
GL1F201
IS1U20
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BUK657-500B
Abstract: et 25 diode
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery
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BUK657-500B
T0220AB
BUK657-500B
et 25 diode
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Untitled
Abstract: No abstract text available
Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers
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APT2X30D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT15D100K
O-220
O-22QAC
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ca3141e
Abstract: No abstract text available
Text: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A
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CA3141
CA3141E
CA3141
16-lead
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epitaxx
Abstract: No abstract text available
Text: epitaxx inc IDE D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r
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EDL1300CD
-FC/EDL1300FJ-S
L1300CD
EDL1300FJ-S/M
EDL1300CD
EDL1300CD:
1300CD
EDL1300FJ-S
EDL1300CD-FC
epitaxx
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X100D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT30D100B
APT30D90B
APT30D80B
O-247AD
3000-sso
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selfoc
Abstract: EPITAXX SMF.300 EDL1300CD EDL1300CD-FC EDL1300FJ-S
Text: epitaxx inc I D E D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r
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EDL1300CD-FC
EDL1300FJ-S/M:
EDL1300CD
33bU4Ub
EDL1300CD-FC
/EDL1300FJ-S
1300CD
EDL1300FJ-S
selfoc
EPITAXX
SMF.300
EDL1300CD
EDL1300FJ-S
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marking 531 121
Abstract: S1 DIODE schottky diode MARKING CODE 4b
Text: Central Semiconductor Corp. C M D S H -3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, d e sign ed fo r fa s t s w itch in g applications requiring a low forward voltage
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OD-323
100jiA
100mA
G0G1771
marking 531 121
S1 DIODE schottky
diode MARKING CODE 4b
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and
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NDL3220,
NDL3220S
L3220
IEI-1209)
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zener diode 1N PH 48
Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
Text: D3E d "| bllSflbS OODDö'i'i 4 MICROSEMI CORP 8700 E. Thomas Rd., P.O. Box 1390, Scottsdale, AZ 85252 Microjsemi Corp. ' The diode experts RADIATION HARD EN ED ^TEMPERATURE COM PENSATED SILIC O N ZENER REFERENCE DIO DES fl Phone: 602 941-6300 Fax: (602) 947-1503
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RH821-829,
RH3154-3157A,
RH935-939B,
RH941-944B
RH3501-3504
RH4890-4895A.
AZRH8825
zener diode 1N PH 48
zener diode 1N PH 44
1X1018
RH4895
1N4915A
RH4895A
RH939
1N4057
1N4085A
1N4565
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with
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VTL23G2B,
23G3B
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H11L
Abstract: H11L2 RE12 H11L1 H11L3
Text: OPTOELECTRONICS MICROPROCESSOR COMPATIBLE GaAs SCHMITT TRIGGER OPTOCOUPLERS H11L1 H11L2 H11L3 PACKAGE DIMENSIONS The H11L series has a m edium -to-high sp e ed integrated circuit detector optically couple d to a gallium -arsenide infrared emitting diode. The output incorporates a
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H11L1
H11L2
H11L3
ST2069
ST2070
ST2015
ST2016
ST2017
H11L
RE12
H11L3
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CLM185T2
Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q
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CLM185-2
CLM285-2
CLM385-2
CLM185
20yiA
CLM185T2
CLM285T2
CLM285d.
4432E
CLM285Y2
CLM385N2
CLM385T2
CLM385Y2
120PV
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Untitled
Abstract: No abstract text available
Text: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
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GL3201
Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun ed coil • Internal Zener diode regulated supply • Inherent high stability
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GL3201A/GL3202
GL3201A
GL3202
L3201A/GL3202
GL3201
GL3201A
GL3202
audio signal detector circuit
fm detector coil
audio rms detector
GL320
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