DIODE E5 Search Results

Contextual Info: SEMICONDUCTOR E50A2CS, E50A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES 2010. 1. 28 Revision No : 0 1/2

Contextual Info: SEMICONDUCTOR E50A21VBS, E50A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES 2002. 4. 16 Revision No : 5 1/1

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 ^ 3 1 0 D lt7 1 ti E • B Y588 T-£>/-/6~ BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. The device is intended for use as efficiency diode in horizontal deflection circuits between base and emitter terminals

Contextual Info: SEMICONDUCTOR E50A2CBS, E50A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR + Type (- Type)

alternator diode 50a

Abstract: E50A2CBR E50A2CBS alternator diode
Contextual Info: SEMICONDUCTOR E50A2CBS, E50A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR + Type (- Type)

Contextual Info: SEMICONDUCTOR E50A27VBS/SA, E50A27VBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Zener Voltage : 27V Typ. POLARITY E50A27VBS/SA (+ Type) E50A27VBR/RB (- Type) K

E50A27VBR

Abstract: E50A27VBS 50A ZENER alternator diode 50a
Contextual Info: SEMICONDUCTOR E50A27VBS/SA, E50A27VBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Zener Voltage : 27V Typ. POLARITY E50A27VBS/SA (+ Type) E50A27VBR/RB (- Type) K

alternator diode

Abstract: alternator diode 50a E50A2CBR E50A2CBS
Contextual Info: SEMICONDUCTOR E50A2CBS/SA, E50A2CBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS/SA + Type E50A2CBR/RB

Contextual Info: SEMICONDUCTOR E50A2CBS/SA, E50A2CBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS/SA + Type E50A2CBR/RB

Contextual Info: DATA SHEET_ LASER DIODE NDL7408P Series 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER DESCRIPTION NDL7408P Series is a 1 310 nm laser diode coaxial module with single mode fiber. Quantum Well st-MQW structure and a built-in InGaAs monitor photo diode.

alternator diode

Abstract: alternator diode 50a E50A2CPS
Contextual Info: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)

Zener 21V

Abstract: E50A21VBR E50A21VBS
Contextual Info: SEMICONDUCTOR E50A21VBS, E50A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 21V Typ. POLARITY E50A21VBS (+ Type) E50A21VBR (- Type) K H MAXIMUM RATING (Ta=25℃)

Contextual Info: SEMICONDUCTOR E50A37VPS, E50A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Zener Voltage : 37V Typ. F1 POLARITY E50A37VPR (+ Type) (- Type) B L1 G E50A37VPS

50A ZENER

Abstract: 32V zener E50A37VPS alternator diode 50a alternator diode
Contextual Info: SEMICONDUCTOR E50A37VPS, E50A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES E Average Forward Current : IO=50A. Zener Voltage : 37V Typ. L2 F1 POLARITY E50A37VPR (+ Type) (- Type) B L1 G E50A37VPS

Contextual Info: SEMICONDUCTOR E50A27VBS, E50A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 27V Typ. POLARITY E50A27VBS (+ Type) E50A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃)

DI 380 Transistor

Abstract: E50A27VBR E50A27VBS
Contextual Info: SEMICONDUCTOR E50A27VBS, E50A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 27V Typ. POLARITY E50A27VBS (+ Type) E50A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃)

Contextual Info: SEMICONDUCTOR E50A21VBS, E50A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 21V Typ. POLARITY E50A21VBS (+ Type) E50A21VBR (- Type) K H MAXIMUM RATING (Ta=25℃)

Contextual Info: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ・Average Forward Current : IO=50A. E L2 ・Reverse Voltage : 200V Min. F1 L1 G POLARITY B E50A2CPS (+ Type) E50A2CPR (- Type)

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

alternator diode 50a

Abstract: E50A2CS E50A2CR
Contextual Info: SEMICONDUCTOR E50A2CS, E50A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 A1 D3 FEATURES B1 B2 D2 ・Repetitive Peak Reverse Voltage : VRRM=200V. D1 ・Average Forward Current : IO=50A. E MAXIMUM RATING Ta=25℃

mo299

Abstract: TAC10 lt416 LHS01
Contextual Info: LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • Integrated PWM fan speed control output supports high The LM96063 is remote diode temperature sensors with integrated fan control that includes remote diode sensing. The

MTX70A

Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Contextual Info: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35