Untitled
Abstract: No abstract text available
Text: Green Power Solutions srl Via Venezia 34D - 10088 Volpiano TO , Italy Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it GPDD012K RECTIFIER DIODE Low profile ceramic package Spot welding applications Electroplating applications
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GPDD012K
GPDD012KT001
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GPS GPDD012K
Abstract: GPDD012K
Text: Green Power GPS - Green Power Semiconductors SPA Factory: Via Ungaretti 10, 16157 Genova, Italy Semiconductors Phone: +39-010-667 1307 Fax: +39-010-667 2459 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDD012K RECTIFIER DIODE Suitable for high forward current
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GPDD012K
GPDD012KT001
GPS GPDD012K
GPDD012K
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GPDD012K
Abstract: No abstract text available
Text: Green Power Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Semiconductors Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDD012K RECTIFIER DIODE Low profile ceramic package Spot welding applications
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GPDD012K
GPDD012KT001
GPDD012K
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SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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BB142
Abstract: SG 46 a DIODE SMD diode PH 12 SMD diode sg 46
Text: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB142 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB142
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BB142
BB142
-IIMBL026
OD523
SC-79)
SG 46 a DIODE SMD
diode PH 12
SMD diode sg 46
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bb143
Abstract: SMD diode sg 46 Diode smd code sg SG 46 a DIODE SMD st smd diode VU
Text: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB143 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB143
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BB143
BB143
MBL02G
OD523
SC-79)
SMD diode sg 46
Diode smd code sg
SG 46 a DIODE SMD
st smd diode VU
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Diode smd code sg
Abstract: BB141 diode sg 69
Text: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB141 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB141
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OCR Scan
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BB141
BB141
-IIMBL026
OD523
SC-79)
Diode smd code sg
diode sg 69
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SMD diode sg 46
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB151 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB151
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BB151
BB151
OD323
SMD diode sg 46
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SMD-247
Abstract: NEMA FR-4
Text: Bulletin 12106 International S R e ctifie r 4o e ps.s s e r ie s SURFACE MOUNTABLE INPUT RECTIFIER DIODE Description/Features The 40EPS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used
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40EPS.
140pm)
0D21D33
O-247AC
SMD-247)
SMD-247
NEMA FR-4
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diode SMD t01
Abstract: Diode IOR 10 dc 20ETS 20ETS08 20ETS12 20ETS16 SMD-220 ScansUX34 diode SMD t01 st Ford f 150
Text: Bulletin 12101 International i? Rectifier 2 oets. s e rie s INPUT RECTIFIER DIODE v F < 1V@ 10A = 300A ^FSM Description/Features T he 20ETS. rectifier series has been optim ized V,RRM 800 to 1600V for v e ry low forw ard vo lta g e drop, w ith m oderate
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20ETS.
1600VFax:
S-163
87959895-Cherstr.
CH-8152ZURICH,
diode SMD t01
Diode IOR 10 dc
20ETS
20ETS08
20ETS12
20ETS16
SMD-220
ScansUX34
diode SMD t01 st
Ford f 150
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS P Â T Â S ln lE E T BAS216 High-speed switching diode 1999 Apr 22 Product specification Supersedes data of 1996 Apr 03 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed switching diode
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BAS216
BAS216
115002/3180/04/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV99W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips S e m ico n d u cto rs 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99W FEATURES
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BAV99W
BAV99W
115002/00/04/pp12
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CH-8152
Abstract: 40EPS 40EPS08 40EPS12 40EPS16 60788 ScansUX33
Text: Bulletin 12104 International [IQRRectifier 40EPS. SERIES INPUT RECTIFIER DIODE I Description/Features T h e 4 0 E P S rectifie r series has been o p tim ize d fo r ve ry low fo rw a rd v o lta g e drop w ith m od e ra te leakage. T he glass passivation te ch no lo g y used
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40EPS
40EPS.
O-247AC
CH-8152
40EPS08
40EPS12
40EPS16
60788
ScansUX33
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ingaas apd preamp receiver -20 1.25
Abstract: M1550
Text: DATA SHEET NEC R E C E IV E R M O D U LE NDL5522P ELECTRON DEVICE InGaAs AVALANCHE PHOTO DIODE FOR 2.5 Gb/s BUTTERFLY MODULE W ITH MULTIMODE FIBER INTERNAL PRE-AM PLIFIER DESCRIPTION NDL5522P is an InGaAs APD 6-pin butterfly package module incorporating silicon preamplifier 1C. It is especially designed
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NDL5522P
NDL5522P
NDL5522PC.
NDL5407P
NDL5407P1
NDL5408P
NDL5408P1
NDL5422P*
NDL5506P:
GI-50
ingaas apd preamp receiver -20 1.25
M1550
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BAX65
Abstract: BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106B BD107A
Text: SEMELAB LTD 37E D • A1331A7 GODDQTfi 1 J S E M E L A B MANUFACTURING E ■c Polarity Package VCEO cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T05 T05 45 45 64 64 0.6 0.6 0.1 0.1 j i r / PNP PNP PNP PNP PNP T05 T05 T05 T05 T05 64 32 32 64 32 0.1
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BAX65
BCY32A
BCY33A
BCY34A
BCY58
BCY59
BCY78
BCY79
BD106AN
BD106B
BAX65
BCY34A
BCY58
BCY59
BCY79
BD107A
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diode RP 4040
Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Text: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t
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TNF300
diode RP 4040
diode RP 6040
DIODE REDRESSEMENT 4040
DIODE REDRESSEMENT
RP 8040 X
diode RP 6020
ic 4040
RC snubber circuit
ku1010
RP 1240 M
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Untitled
Abstract: No abstract text available
Text: m U ER E X CDD11210 CDD11610 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D io d e POW-R-BLOK Modules 100 Amperes/1200-1600 Volts Description: O UTLINE DRAWING TO CDD11210, CDD11610 Dual Diode POW-R-BLOK™ Modules
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CDD11210
CDD11610
Amperes/1200-1600
CDD11210,
CDD11610
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smd diode L39
Abstract: SMD diode marking L39 SMD IC marking 632
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BAS316 High-speed diode Product specification Supersedes data of 1998 Jan 08 File under Discrete Semiconductors, SC01 Philips Semiconductors 1998 Mar 26 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification
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BAS316
BAS316
OD323
SCA56
115104/00/03/pp12
smd diode L39
SMD diode marking L39
SMD IC marking 632
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Untitled
Abstract: No abstract text available
Text: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m m u n icatio n s and various o th er types o f optical e q u ip m en t.
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HL1221AC
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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PDF
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CW317
Abstract: No abstract text available
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 1 D L 2 C 4 1 Unit in mm O S W IT C H IN G T Y P E P O W E R S U PP LY A P P L IC A T IO N . O C O N V E R T E R & C H O P P E R A P P L IC A T IO N . • • • Repetitive Peak Reverse Voltage : Vr r m = 200V
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O-220AB
--20A///S
CW317
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