40EPS Search Results

VS-40EPS12-M3

Abstract: VS-40EPS08-M3 VS-40EPS12
Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47

Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47

Contextual Info: VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A TO-247AC modified FEATURES TO-247AC • Very low forward voltage drop • 150 °C max. operating junction temperature

Contextual Info: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47

Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47

40EPS

Abstract: 40EPS08 40EPS12 40EPS16
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2104A 40EPS. SERIES INPUT RECTIFIER DIODE VF < 1V @ 20A IFSM = 475A VRRM 800 to 1600V Description/Features The 40EPS rectifier series has been optimized for very low forward voltage drop with moderate leakage. The glass passivation technology used

IR 40EPS16

Abstract: 035H 40EPS 40EPS16 I2160
Contextual Info: Bulletin I2160 10/01 SAFEIR Series 40EPS16 INPUT RECTIFIER DIODE VF < 1V @ 20A IFSM = 475A VRRM = 1600V Description/Features The 40EPS16 rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.

40EPS16

Abstract: P035H
Contextual Info: Bulletin I2173 10/04 SAFEIR Series 40EPS16PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 20A IFSM = 475A VRRM = 1600V Description/ Features The 40EPS16PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

SMD-247

Abstract: NEMA FR-4
Contextual Info: Bulletin 12106 International S R e ctifie r 4o e ps.s s e r ie s SURFACE MOUNTABLE INPUT RECTIFIER DIODE Description/Features The 40EPS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used

Contextual Info: 40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable

Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47

Contextual Info: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according

40EPS

Abstract: IR230DM12CCB
Contextual Info: Bulletin I0121J rev. A 02/97 IR230DM12CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

035H

Abstract: 40EPS 40EPS16
Contextual Info: Bulletin I2160 10/01 SAFEIR Series 40EPS16 INPUT RECTIFIER DIODE VF < 1V @ 20A IFSM = 475A VRRM = 1600V Description/Features The 40EPS16 rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.

I2104

Abstract: 40EPS 40EPS08 40EPS12 40EPS16
Contextual Info: Bulletin I2104 rev. A 07/97 SAFEIR Series 40EPS. INPUT RECTIFIER DIODE VF < 1V @ 20A IFSM = 475A VRRM 800 to 1600V Description/Features The 40EPS rectifier SAFE IRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up

diode BY 1600 rectifier

Abstract: TJ20A
Contextual Info: 40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable

Contextual Info: 40EPS. SAFEIR Series Bulletin I2104 rev. A 07/97 Transient Thermal Impedance Z thJC K/W 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady State Value: (DC Operation) Single Pulse 40EPS. Series 0.01 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)

40eps12

Abstract: 40ETF12PbF p035h 40EPS
Contextual Info: Bulletin I2179 rev. A 03/06 SAFEIR Series 40EPS.PbF INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1V @ 20A IFSM = 475A VRRM = 800 - 1200V Description/ Features The 40EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47

40EPS

Abstract: IR230DM16CCB
Contextual Info: Bulletin I0117J 09/00 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters Units VFM

power Diode 40eps08

Abstract: 40EPS12PbF 40EPS 40EPS08 40EPS12
Contextual Info: 40EPS.PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS.PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

Contextual Info: Bulletin I2179 rev. A 03/06 SAFEIR Series 40EPS.PbF INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1V @ 20A IFSM = 475A VRRM = 800 - 1200V Description/ Features The 40EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

035H

Abstract: 40EPS 40EPS08 40EPS12 I2104
Contextual Info: Bulletin I2104 rev. C 01/05 SAFEIR Series 40EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 40A IFSM = 475A VRRM = 800 - 1200V Description/Features The 40EPS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.

40EPS12PbF

Abstract: 40eps12 40EPS P035H
Contextual Info: Bulletin I2179 11/04 SAFEIR Series 40EPS12PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 20A IFSM = 475A VRRM = 1200V Description/ Features The 40EPS12PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate