NDL5407P
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5521P. NDL5521P1, NDL5521P2 2.5 Gb/s OPTICAL FIBER COMMUNICATIONS <t>50 n m InGaAs AVALANCHE PHOTO DIODE WITH MMF DESCRIPTION NDL5521P, NDL5521P1 and NDL5521P2 are InG aAs avalanche p h o to d io d e m o d u le s w ith m u ltim o d e fib e r. They are
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NDL5521P.
NDL5521P1,
NDL5521P2
NDL5521P,
NDL5521P1
NDL5521P2
NDL5521PC,
NDL5521P1C
NDL5521P2C.
NDL5407P
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Untitled
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies S E y S O N P U C T D R ;W MMBD7000 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Param eter S ym bol V alu e
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MMBD7000
MMBD1201-1205
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DIODE T50
Abstract: MMBD7000 mmbd1201 MA670
Text: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units
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MMBD7000
MMBD1201-1205
L5D1130
004G5A1
0040Sfl2
DIODE T50
MMBD7000
mmbd1201
MA670
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IGBT K 40 T 1202
Abstract: 40 t 1202 igbt BUP306D
Text: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code
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O-218AB
BUP306D
Q67040-A4222-A2
SII003
IGBT K 40 T 1202
40 t 1202 igbt
BUP306D
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diode e 1205
Abstract: mmbd1201
Text: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage
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MMBD1201
OT-23
L5G113D
diode e 1205
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MA760
Abstract: 1N4150 FDLL4150
Text: SEMICONDUCTOR tm 1N4150 / FDLL4150 C O LO R B A N D M AR KING D E V IC E FD LL4150 1S T B A N D 2N D BAND B LA C K ORANGE High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum Ratings* t a = 2 5 ° C u nless o th e rw ise noted
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1N4150
FDLL4150
DO-35
LL-34
FDLL4150
MMBD1201-1205
A-200
A-400
MA760
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DBB04
Abstract: DBB04C DBB04G 2793a
Text: O rd e rin g n u m b e r: EN2793A DBB04 N0.2793A Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier F e a tu re s •Single-phase bridge rectifier use • Plastic molded structure • Peak reverse voltage : Vrm = 200 to 600V ■Average rectified current : Io = 0.4A
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EN2793A
DBB04
DBB04C
DBB04G
DBB04
2793a
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BD1201
Abstract: No abstract text available
Text: BE :?VlICON D U C 'TP R MMBD7000 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See M M BD1201-1205 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV
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BD7000
MMBD7000
OT-23
BD1201-1205
BD1201
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Untitled
Abstract: No abstract text available
Text: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m m u n icatio n s and various o th er types o f optical e q u ip m en t.
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HL1221AC
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Untitled
Abstract: No abstract text available
Text: S S M ÎC O N D Ü O T O H 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units 50 V Average Rectified Current
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1N4454
DO-35
BD1201-1205
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1N4454
Abstract: No abstract text available
Text: B IE M ÌC O N P U C T O R :>> 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum RâtiriÇJS T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value Units w lv Working Inverse Voltage
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1N4454
Do-35
MMBD1201-1205
1N4454
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fairchild 1P
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
fairchild 1P
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Untitled
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies t _8 i iHAfrltAif Ï ¡p^j. ;S £~!M i O D N P U C ' T O R 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Maximum RâtinÇJS T A = 2 5 ° C unless o th e rw ise noted
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1N4454
DO-35
BD1201-1205
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diode 744
Abstract: MMBD1201 tu marking 744 diode f1201 diode e 1205 MMBD1203 MMBD1504A MMBD1505A F-1201
Text: S e m i c o n d u c t o r " MMBD1201 /1203 / 1204 /1205 M 24 "m SOT-23 n r M A R K IN G M M BD 1201 M M BD1203 24 26 M M BD 1504A M M BD 1505A 27 28 High Conductance Ultra Fast Diode Sourced from Proce ss 1 P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1201
OT-23
MMBD1504A
MMBD1203
MMBD1505A
f1201
100Ohms
r-23P
bS01130
diode 744
tu marking
744 diode
diode e 1205
F-1201
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CMBD1201, 1202, 1203 CMBD1204, 1205 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode, in series
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Original
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CMBD1201,
CMBD1204,
OT-23
CMBD1203
CMBD1204
CMBD1205
CMBD1204
CMBD1205
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Fet irfz44n
Abstract: No abstract text available
Text: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description
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91318B
Fet irfz44n
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BD120
Abstract: No abstract text available
Text: MlC O N D U C T O R D iscrete POWER & S ig n a l Technologies i MMBD1201 /1203 /1204 /1205 CONNECTION f' 1201 DIAGRAMS 3 ^ r1 * * 1 3 2 NC 1204 1203 1 2 3 3 I 1205 MARKING SOT-23 M M B D1201 24 M M B D1204A 27 M M B D 1203 26 M M B D1205A 28 V J 2 ’ High Conductance Ultra Fast Diode
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MMBD1201
OT-23
D1201
D1204A
D1205A
BD120
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1202 smd diode
Abstract: 304N diode e 1205 smd 1203 5 DSA0010574 CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1205
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD1201, 1202, 1203 CMBD1204, 1205 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode, in series
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OT-23
CMBD1201,
CMBD1204,
CMBD1203
CMBD1204
CMBD1205
CMBD1204
CMBD1205
1202 smd diode
304N
diode e 1205
smd 1203 5
DSA0010574
CMBD1201
CMBD1202
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1207A
Abstract: lcd 3901
Text: A ugust 1996 t o r LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking The LM 1205A/LM 1207A is a very high frequency video am plifier system intended fo r use in high resolution RGB m oni tor applications. In addition to the three m atched video am
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LM1205A/LM1207A
LM1205A/LM1207A
Hz/85
205A/LM
1207A
lcd 3901
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PDF
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mmbd1201-1205
Abstract: 1N4454 mmbd1201
Text: 1N4454 ta Discrete POW ER & Signa l Technologies National Semiconductor" 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value
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1N4454
DO-35
MMBD1201-1205
40S3T
bSD1130
1N4454
mmbd1201
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spark killer
Abstract: No abstract text available
Text: O rdering num ber: EN 1831B LB 1205 N0.1831B Monolithic Digital IÇ High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes
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1831B
7097KI
6265KI
D203KI
LB1205
spark killer
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PDF
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2SK1205
Abstract: No abstract text available
Text: MM1b205 GQ13253 022 • H I T M 2 S K 1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown
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2SK1205
MM1b205
GQ13253
2SK1205
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D4148
Abstract: D4148 be 1414-8C D4148CC
Text: SEM ICONDUCTOR tm MMBD4148 / SE/ CC/ CA CONNECTION DIAGRAMS / 3 j 4 1 ^ 1 2 NC D5 48C A D6 M M BD4148SE D4 1 V 1 4148SE A 2 3 | 3 | 4148C C M M B D4148CC 3 . 1 4148C A 2J High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics.
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MMBD4148
BD4148SE
4148SE
4148C
D4148CC
MMBD1201-1205
MMBD4148/SE/CC/CA
D4148
D4148 be
1414-8C
D4148CC
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PDF
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MBD7000
Abstract: BD7000
Text: S S M iC C N Q L ÌC T G R MMBD7000 CONNECTION SOT-23 DIAGRAM y 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings' Symbol TA = 25 °C unless otherwise noted Parameter Value Units W|v
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BD7000
MMBD7000
OT-23
MMBD1201-1205
MBD7000
BD7000
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