DIODE DS 10 Search Results

diode avalanche DSA 2-16a

Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
Contextual Info: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E

IRF6795MTR1PBF

Abstract: 60mH inductor IRF6795MPBF IRF6795MTRPBF
Contextual Info: PD - 97321C IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V

irf 4110

Abstract: id 6ma vgs 8v mosfet
Contextual Info: PD - 97568 IRF6728MPbF IRF6728MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)

Contextual Info: DS 75 DSA 75 Rectifier Diode Avalanche Diode VRSM V BR minÿ① VRRM DSI 75 DSAI 75 VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700 1900 1300 1760

35-16A

Abstract: 35-12a 3508a diode avalanche DSA IXYS DSA 3516A
Contextual Info: DS 35 DSA 35 VRRM = 800-1800 V IF RMS = 80 A IF(AV)M = 49 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800

75-16B

Abstract: IXYS DSA 75 IXYS DSA 12 diode avalanche DSA ixys dsi
Contextual Info: DS 75 DSA 75 Rectifier Diode Avalanche Diode VRSM V BR minÿ① VRRM DSI 75 DSAI 75 VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700 1900 1300 1760

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

IXYS DSA 9-12F

Abstract: DIODE DSA 18 DIODE DSA 9-16F diode avalanche DSA
Contextual Info: DS 9 DSA 9 VRRM = 800-1800 V IF RMS = 18 A IF(AV)M = 11 A Rectifier Diode Avalanche Diode VRSM V 900 1300 1700 1900 V(BR)minÿ① VRRM V V 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS 9-08F DS 9-12F A C DO-203 AA C DSA 9-12F DSA 9-16F

diode avalanche DSA 25 8

Abstract: diode avalanche DSA 2-16a
Contextual Info: DS 2 DSA 2 VRRM = 800-1800 V IF RMS = 7 A IF(AV)M = 3.6 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM V V V 900 1300 1700 1900 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS 2-08A DS 2-12A A C C A DSA 2-12A DSA 2-16A DSA 2-18A

semikron SKFT 150

Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Contextual Info: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode

Contextual Info: SÏ4812DY - SNicönix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SUM M ARY V ds (V) r DS(ON) (-2) Id (A) 0.018 @ V GS = 10 V ± 9 .0 0.028 @ V GS = 4.5 V

S-1380

Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters 836 DIODE current
Contextual Info: Q * B • ■ ■ ■ ■ ■ R t es g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS R DS(on) R ds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC

Contextual Info: SÏ4832DY - SNicönix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SU M M AR Y V ds (V) r DS(ON) (-2) I d (A) 0.018 @ V GS = 10 V ± 9 .0 0.028 @ V GS = 4.5 V

Contextual Info: SKiiP 13NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DS .< .<1[ L/DS -* Q HG R<J 45%7* 2&97'8:*7 *B7?: :76 -* Q HG UVNW R< -] Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

IXYS DSA 1-16D

Abstract: diode avalanche DSA DIODE DSA 1-16D IXYS DSA 6058AS 1200-1800V
Contextual Info: DS 1 DSA 1 VRRM = 1200-1800 V IF RMS = 7 A IF(AV)M = 2.3 A Rectifier Diode Avalanche Diode VRSM V(BR)min ① VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Standard Avalanche Type Types DS 1-12D DSA 1-12D DSA 1-16D DSA 1-18D A C A C A = Anode C = Cathode

35N60CFD

Abstract: SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor
Contextual Info: SPW35N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge

47n60cfd

Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
Contextual Info: SPW47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge

11n60cfd

Abstract: 11N60 11N60C JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D11A D8172
Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge

20n60cfd

Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge

d207

Abstract: 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge

Contextual Info: SKiiP 26NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper M<DS .< .<1Z M/DS -? Q HG R<K 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -¥ Diode - Inverter, Chopper MiniSKiiP 2 -* Q HG VWTX R< .P .P1Z -¥

Contextual Info: SI6820DQ - SNicönix N-Ch, Reduced Qg MOSFET With Schottky Diode New Product M O SFET PRO DU CT SU M M AR Y V ds V r DS(ON) (-2) I d (A) 0.160 @ V GS = 4.5 V ± 1 .9 0.260 @ V GS = 3.0 V

Contextual Info: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous