Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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ZENER DIODE t2
Abstract: philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142
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M3D119
BZD142
MGU216
613510/01/pp8
ZENER DIODE t2
philips data book zener diode
AS 108-120
BP317
BZD142
BZD142-68
philips zener diode
IEC 60060-1
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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ST tvs diode sma
Abstract: BP317 BZG142 BZG142-68 philips zener diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG142 SMA ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification SMA ZenBlockTM; zener with integrated blocking diode
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M3D168
BZG142
DO-214AC
MGU215
DO-214AC)
613510/01/pp8
ST tvs diode sma
BP317
BZG142
BZG142-68
philips zener diode
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BYD63
Abstract: blocking diode MLC302
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD63 Ripple blocking diode Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode
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M3D119
BYD63
BYD63
blocking diode
MLC302
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BY278
Abstract: M3D118
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY278 Damper diode Product specification File under Discrete Semiconductors, SC01 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY278 FEATURES DESCRIPTION • Glass passivated
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M3D118
BY278
MAM104
BY278
M3D118
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philips datasheet surface mount zener diode
Abstract: philips data book zener diode ZENER DIODE t2 test SOD87 BZD142W BZD142W-68 M3D121 philips zener diode philips zener diode 47
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BZD142W ZenBlock; zener with integrated blocking diode Product specification 2000 May 01 Philips Semiconductors Product specification ZenBlock; zener with integrated blocking diode BZD142W FEATURES
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M3D121
BZD142W
MAM433
613510/01/pp8
philips datasheet surface mount zener diode
philips data book zener diode
ZENER DIODE t2
test SOD87
BZD142W
BZD142W-68
M3D121
philips zener diode
philips zener diode 47
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BY428
Abstract: M3D118
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY428 Damper diode Product specification Supersedes data of May 1996 File under Discrete Semiconductors, SC01 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY428 FEATURES
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M3D118
BY428
MAM104
BY428
M3D118
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SC01 Mounting 1996 1
Abstract: BY228 Diode M3D118 BY228 DIODE by228
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Product specification Damper diode BY228 FEATURES
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M3D118
BY228
MAM104
SC01 Mounting 1996 1
BY228 Diode
M3D118
BY228
DIODE by228
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BY228 Diode
Abstract: BY228 M3D118 DIODE by228
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 File under Discrete Semiconductors, SC01 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES
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M3D118
BY228
MAM104
BY228 Diode
BY228
M3D118
DIODE by228
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IEC 60060-1
Abstract: 600601 TOPSWITCH BZD142W BZD142W-68 M3D121 08603 MAM433
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D121 BZD142W ZenBlockTM; zener with integrated blocking diode Product specification Supersedes data of 2000 May 01 2001 Oct 10 Philips Semiconductors Product specification ZenBlockTM; zener with integrated blocking diode
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M3D121
BZD142W
MAM433
SCA73
613510/02/pp8
IEC 60060-1
600601
TOPSWITCH
BZD142W
BZD142W-68
M3D121
08603
MAM433
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Philips diode
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated
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M3D119
BAQ800
MAM123
frequenci31
SCA55
117027/1200/01/pp12
Philips diode
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BYM63
Abstract: reverse blocking diode specification
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM63 Ripple blocking diode Product specification Supersedes data of December 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode
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M3D118
BYM63
BYM63
reverse blocking diode specification
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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UAF41
Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Text: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver wendung als H.F.-, Z.F.- und H.F. Verstärker
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UAF41
UAF41
CDA 5,5 Mc
CDA 5.5 MC
alim
H242
551-va
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DAF41
Abstract: nf schaltungen
Text: PHILIPS Id â R ï DIODE-PENTODE for use as A.F. amplifier in battery receivers DIODE-PENTHODE pour utilisation en amplificatrice B.F. dans des appareils-batterie DIODE-PENTODE zur Verwendung als NF-Verstärker Batteriegeräten Heating : direct by D.C. series or parallel supply
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10Veff)
DAF41
nf schaltungen
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939 diode
Abstract: TRIODE EAC91 CDA 5.5 MC la 4985
Text: PH ILIPS EAC 9 1 DIODE-TRIODE for use as U.H.F. frequency changer DIODE-TRIODE pour utilisation en changeuse de fréquence U.H.F. DIODE-TRIODE zur Verwendung als UKF-MisehrÖhre Heating :indirect by A.C. or D.O. series or parallel supply Chauffage: indirect par C.A. ou C.C.
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max19
939 diode
TRIODE
EAC91
CDA 5.5 MC
la 4985
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DAF401
Abstract: No abstract text available
Text: PHILIPS IDÄF4Ö DIODE-PENTODE for use as R.F. or I.F. amplifier in battery receivers DIODE-PENTHODE pour l'utilisation comme amplifica trice H.F. ou M.F. dans des apareils-batterie DIODE-PENTODE zur Verwendung als HF- oder ZF- Ver stärker in Batteriegeräten
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OCR Scan
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DAF40
7RQ3013
DAF401
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PY80 tube
Abstract: PY tube tube PY80 Z1951 Tube 5908 P 939 DIODE PY80 64236 PY tube 500 a
Text: i~ /íü n iú a t'í |pY 80 DIODE for use as booster DIODE pour 1 'utilisation comme survolteuse DIODE zur Verwendung als Spannungserhöher Heating: indirect by A.C. or D.C.; series supply Chauffage: indirect par C.A. ou C.C.; alimentation en série Heizung: indirekt durch
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Z1951
PY80 tube
PY tube
tube PY80
Z1951
Tube 5908
P 939 DIODE
PY80
64236
PY tube 500 a
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