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    DIODE C3 CG Search Results

    DIODE C3 CG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C3 CG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode A123

    Abstract: No abstract text available
    Text: 2 G-1 J10 1 2 3 1 2 3 4 C4 1 2 GND 100n 3 GND MFNS1902 T11 25 R15 GND J42 J22 R16 CR C1 V5 GND 100n C11 DIODE D11 T21 MFNS1902 LED2 25 R25 GND J43 J23 R26 CG TXD RXD RTS# CTS# DTR# DSR# DCD# RI# 2 23 22 13 14 12 1 5 3 11 2 9 10 6 GND MFNS1902 T31 25 R35 J44


    Original     		PDF MFNS1902 CAT4238 DOGL128 W128-6X8/6X9 TMGG13264 diode A123

    JC JB jt

    Abstract: No abstract text available
    Text: STW82103B RF down converter with embedded integer-N synthesizer Preliminary data Features •High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 78 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 2300 MHz to 2700 MHz


    Original     		PDF STW82103B VFQFPN-44 JC JB jt

    STW82100

    Abstract: 7783 STW8210 cmos mixer "CMOS mixer" JC JB jt
    Text: STW82100B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB ■ RF range: 1850 MHz to 2400 MHz


    Original     		PDF STW82100B STW82100 7783 STW8210 cmos mixer "CMOS mixer" JC JB jt

    JC JB jt

    Abstract: No abstract text available
    Text: STW82102B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 84 dBc ■ Noise figure: – NF: 10.4 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz


    Original     		PDF STW82102B JC JB jt

    JC JB jt

    Abstract: No abstract text available
    Text: STW82101B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 80 dBc ■ Noise figure: – NF: 10 dB ■ Conversion gain – CG: 9 dB ■ RF range: 695 MHz to 960 MHz


    Original     		PDF STW82101B JC JB jt

    Untitled

    Abstract: No abstract text available
    Text: STW82100B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB


    Original     		PDF STW82100B VFQFPN-44

    Untitled

    Abstract: No abstract text available
    Text: STW82102B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 85 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz


    Original     		PDF STW82102B VFQFPN-44

    Untitled

    Abstract: No abstract text available
    Text: STW82103B RF down converter with embedded integer-N synthesizer Datasheet −production data Features •High linearity: – IIP3: +25 dBm – 2FRF-2FLO spurious rejection: 80 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 2300 MHz to 2700 MHz


    Original     		PDF STW82103B 1101A2A1A0)

    STW82100

    Abstract: No abstract text available
    Text: STW82100B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB


    Original     		PDF STW82100B STW82100

    Untitled

    Abstract: No abstract text available
    Text: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz


    Original     		PDF STW82101B 1101A2A1A0)

    Untitled

    Abstract: No abstract text available
    Text: STW82103B RF down converter with embedded integer-N synthesizer Datasheet −production data Features •High linearity: – IIP3: +25 dBm – 2FRF-2FLO spurious rejection: 80 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 2300 MHz to 2700 MHz


    Original     		PDF STW82103B

    Untitled

    Abstract: No abstract text available
    Text: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz


    Original     		PDF STW82101B

    Untitled

    Abstract: No abstract text available
    Text: STW82102B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 85 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz


    Original     		PDF STW82102B

    smd TRANSISTOR code marking 013

    Abstract: TRANSISTOR SMD MARKING CODE 207 marking code C3 SMD Transistor NF marking TRANSISTOR SMD c4 MMIC SOT 143 marking CODE 77 GPS05559 Q68000-A8370 P-SOT143-4-1 smd marking code vd P-SOT-143-4-1
    Text: GaAs MMIC CGY 50 Data Sheet • Single-stage monolithic microwave IC MMIC-amplifier • Cascadable 50 Ω gain block • Application range: 100 MHz to 3 GHz • IP3 30 dBm typ. @ 1.8 GHz • Gain 8.5 dB typ. @ 1.8 GHz • Low noise figure: 3.0 dB typ @ 1.8 GHz


    Original     		PDF OT-143 Q68000-A8370 P-SOT143-4-1 GPS05559 smd TRANSISTOR code marking 013 TRANSISTOR SMD MARKING CODE 207 marking code C3 SMD Transistor NF marking TRANSISTOR SMD c4 MMIC SOT 143 marking CODE 77 GPS05559 Q68000-A8370 P-SOT143-4-1 smd marking code vd P-SOT-143-4-1

    70 MHz SAW FILTER SMA

    Abstract: 943 vco
    Text: STW82101B RF down converter with embedded integer-N synthesizer Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz ■


    Original     		PDF STW82101B 70 MHz SAW FILTER SMA 943 vco

    STW82100

    Abstract: No abstract text available
    Text: STW82100B RF down converter with embedded integer-N synthesizer Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB ■ RF range: 1620 MHz to 2400 MHz


    Original     		PDF STW82100B STW82100

    Diode Marking C3

    Abstract: FDP027N08B_F102
    Text: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS on = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild ® ® Semiconductor ’s advanced PowerTrench process that has


    Original     		PDF

    FCPF400N60

    Abstract: fairchild FCPF400N60
    Text: FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF400N60 FCPF400N60 fairchild FCPF400N60

    Untitled

    Abstract: No abstract text available
    Text: FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP075N15A FDB075N15A

    FCPF260N60

    Abstract: No abstract text available
    Text: FCP260N60E / FCPF260N60E N-Channel SuperFET II MOSFET 600 V, 15 A, 260 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCP260N60E FCPF260N60E FCPF260N60E FCPF260N60

    Untitled

    Abstract: No abstract text available
    Text: FDP023N08B N-Channel PowerTrench MOSFET 75 V, 242 A, 2.35 mΩ Features Description • RDS on = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP023N08B

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 6.8 A, 160 m Features Description • RDS on = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original     		PDF FDD1600N10ALZ

    Untitled

    Abstract: No abstract text available
    Text: FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS on = 3.2 mΩ (Typ.)@ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored


    Original     		PDF FDMS039N08B FDMS039N08B

    c9v diode

    Abstract: 1SV101
    Text: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 01 Unit in mm FM TUNER APPLICATIONS 4.2MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C3 V / Cgy = 2.0~2.7 rs = 0.3 Cl Typ.


    OCR Scan     		PDF 1SV101 55MAX. Rev01-01-16 c9v diode 1SV101