BAT85
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com BAT85 SCHOTTKY BARRIER DIODE FEATURES : DO - 35 Glass DO-204AH • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive
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TH09/2479
TH97/2478
TH07/1033
BAT85
DO-204AH)
BAS85.
DO-35
BAT85
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BAT86
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 BAT86 SCHOTTKY BARRIER DIODE FEATURES : DO - 35 Glass DO-204AH • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring
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TH09/2479
TH97/2478
TH07/1033
BAT86
DO-204AH)
BAS86.
BAT86
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BR50
Abstract: GBPC15005 GBPC1510
Text: TH97/2478 GBPC15005 - GBPC1510 IATF 0060636 SGS TH07/1033 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 15 Amperes BR50 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * TH09/2479 Glass passivated junction chip High surge current capability
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TH97/2478
GBPC15005
GBPC1510
TH07/1033
TH09/2479
UL94V-0
BR50
GBPC1510
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diode bridge 3510
Abstract: diode bridge 3506 diode bridge 3504 BR50 GBPC35005 GBPC3510 diode 1137
Text: TH97/2478 GBPC35005 - GBPC3510 IATF 0060636 SGS TH07/1033 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 35 Amperes BR50 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * TH09/2479 Glass passivated junction chip High surge current capability
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TH97/2478
GBPC35005
GBPC3510
TH07/1033
TH09/2479
UL94V-0
diode bridge 3510
diode bridge 3506
diode bridge 3504
BR50
GBPC3510
diode 1137
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HSS100
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com HSS100 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA :
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TH09/2479
TH97/2478
HSS100
TH07/1033
DO-34
HSS100
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HSS102
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com HSS102 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA :
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TH09/2479
TH97/2478
HSS102
TH07/1033
DO-34
HSS102
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1SS165 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Low diode capacitance. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0)
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TH09/2479
TH97/2478
TH07/1033
1SS165
DO-34
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1SS286
Abstract: No abstract text available
Text: TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1SS286 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA :
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TH97/2478
TH09/2479
TH07/1033
1SS286
DO-34
1SS286
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2478 diode
Abstract: BAS85 BAT85 v1608
Text: TH97/2478 BAS85 TH09/2479 IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as
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TH97/2478
BAS85
TH09/2479
TH07/1033
OD-80C)
DO-35
BAT85.
2478 diode
BAS85
BAT85
v1608
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com BAT81 - BAT83 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODES DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance.
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TH09/2479
TH97/2478
BAT81
BAT83
TH07/1033
DO-34
BAT81
BAT82
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BAS86
Abstract: BAT86
Text: TH97/2478 BAS86 TH09/2479 IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic
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TH97/2478
BAS86
TH09/2479
TH07/1033
OD-80C)
DO-35
BAT86.
100mA
BAS86
BAT86
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BAT46
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com BAT46 SCHOTTKY BARRIER DIODE DO - 35 Glass DO-204AH FEATURES : • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN
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TH09/2479
TH97/2478
TH07/1033
BAT46
DO-204AH)
DO-35
BAT46
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BAX18
Abstract: No abstract text available
Text: TH97/2478 www.eicsemi.com BAX18 IATF 0113686 SGS TH07/1033 TH09/2479 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V
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TH97/2478
BAX18
TH07/1033
TH09/2479
DO-204AH)
DO-35
BAX18
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BAT48
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 BAT48 SCHOTTKY BARRIER DIODE FEATURES : DO - 35 Glass DO-204AH • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a
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TH09/2479
TH97/2478
TH07/1033
BAT48
DO-204AH)
DO-35
BAT48
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 RBV600D - RBV610D IATF 0113686 SGS TH07/1033 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 + ~~ 1.0 ± 0.1 10 7.5 7.5 ± 0.2 ±0.2 ±0.2 MECHANICAL DATA : * Case : Reliable low cost construction
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TH09/2479
TH97/2478
RBV600D
RBV610D
TH07/1033
RBV25
UL94V-0
MIL-STD-202,
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FKBP200
Abstract: FKBP210
Text: TH97/2478 FKBP200 - FKBP210 IATF 0060636 SGS TH07/1033 FAST RECOVERY BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.0 Amperes KBP 0.59 14.9 0.57 (14.5) FEATURES : * * * * * * * * TH09/2479 High case dielectric strength of 2000 VDC High surge current capability
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TH97/2478
FKBP200
FKBP210
TH07/1033
TH09/2479
UL94V-0
FKBP210
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com SHV- 05J HIGH VOLTAGE RECTIFIER DIODE DO - 41 PRV : 2500 Volts Io : 30 mA FEATURES : * * * * * * * * IATF 0113686 SGS TH07/1033 Glass passivated junction chip High voltage capability High surge current capability High reliability
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TH09/2479
TH97/2478
TH07/1033
DO-41
UL94V-0
MIL-STD-202,
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"MARKING CODE 76"
Abstract: marking code sgs BAS70-05 marking code diode 04 BAS70 BAS70-04 BAS70-06 diode marking code 15
Text: TH97/2478 BAS70/-04/-05/-06 TH09/2479 IATF 0060636 SGS TH07/1033 SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL SOT-23 0.100 0.013 1.40 0.95 0.50 0.35 FEATURES : 3.10 2.70 0.19 0.08 * These diodes feature very low turn-on voltage * Fast switching * These devices are protected by a PN junction
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TH97/2478
BAS70/-04/-05/-06
TH09/2479
TH07/1033
OT-23
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
"MARKING CODE 76"
marking code sgs
marking code diode 04
BAS70
diode marking code 15
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com BYG20D - BYG20J IATF 0113686 SGS TH07/1033 ULTRAFAST AVALANCHE RECTIFIERS PRV : 200 - 600 Volts Io : 1.5 Amperes SMA 2.3 2.1 1.5 1.1 Glass passivated junction Low profile package Ideal for automated placement Low reverse current
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TH09/2479
TH97/2478
BYG20D
BYG20J
TH07/1033
UL94V-O
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1N4148W
Abstract: 1N4148W_ sgs marking code marking code sgs
Text: TH97/2478 1N4148W TH09/2479 IATF 0060636 SGS TH07/1033 SMALL SIGNAL FAST SWITCHING DIODE SOD-123 PRV : 100 Volts IO : 150 mA 1.65 1.55 0.6 0.5 2.7 2.6 FEATURES : 1.15 1.05 0.135 0.127 * Silicon Epitaxial Planar Diode * Fast switching diodes. * Pb / RoHS Free
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TH97/2478
1N4148W
TH09/2479
TH07/1033
OD-123
OD-123
1N4148W)
1N4148W
1N4148W_
sgs marking code
marking code sgs
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AKBP200
Abstract: AKBP210
Text: TH97/2478 AKBP200 - AKBP210 IATF 0060636 SGS TH07/1033 AVALANCHE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.0 Amperes KBP 0.59 14.9 0.57 (14.5) FEATURES : * * * * * * * TH09/2479 High case dielectric strength High surge current capability High reliability
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TH97/2478
AKBP200
AKBP210
TH07/1033
TH09/2479
UL94V-O
sol75
AKBP210
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com SHV- 04 HIGH VOLTAGE RECTIFIER DIODE DO - 41 PRV : 4000 Volts Io : 2 mA FEATURES : * * * * * * IATF 0113686 SGS TH07/1033 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) Glass passivated junction chip High voltage capability
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TH09/2479
TH97/2478
TH07/1033
DO-41
UL94V-O
MIL-STD-202,
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RD2A
Abstract: 2478 diode
Text: TH97/2478 RD2A TH09/2479 IATF 0060636 SGS TH07/1033 ULTRA FAST RECTIFIER DIODE D2A PRV : 600 Volts Io : 1.2 Amperes 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : 0.284 (7.2) 0.268 (6.8) * Glass passivated junction chip * Fast switching for high efficiency
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TH97/2478
TH09/2479
TH07/1033
UL94V-O
MIL-STD-202,
RD2A
2478 diode
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BYX134PL
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com BYX134PL IATF 0113686 SGS TH07/1033 HIGH VOLTAGE AVALANCHE DIODE D2 PRV : 4000 Volts Io : 50mA FEATURES : * High maximum operating temperature * Excellent stability * High reliability * Low reverse current * Pb / RoHS Free
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TH97/2478
BYX134PL
TH07/1033
UL94V-O
MIL-STD-202,
BYX134PL
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