DIODE BY 289 Search Results

sot-23 marking code T25

Abstract: CMPD914 sot-23 MARKING CODE JS
Contextual Info: Central CMPD914 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

Contextual Info: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device

photovoltaic cell

Abstract: Photovoltaic MXP1144 "PHOTOVOLTAIC CELL"
Contextual Info: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device

l7949

Abstract: HP STEP RECOVERY DIODES
Contextual Info: Xhfíl PACKARD APPLICATION NOTE 989 Step Recovery Diode Doubler INTRODUCTION A straightforw ard technique fo r m ultip lie r design is pres­ ented. The in p u t c irc u it is a low pass filte r w hich allows all of the in pu t pow er to be absorbed by the diode and reflects

Contextual Info: TVS Diode Axial Leaded – 500W > SA series SA Series RoHS Description The SA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional Features

Contextual Info: TVS Diode Axial Leaded – 3000W > 3KP series 3KP Series RoHS Description Uni-directional The 3KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

rifa pme 285 mb

Abstract: PME 285 MB RIFA rifa pme capacitor rifa pme 285 mb rifa pme 285 rifa pme 289 mb rifa pme 289 MA EON Q32B MC33035 SCR DC permanent magnet motor
Contextual Info: I AN1101 One-Horsepower Off-Line Brushless Permanent Magnet Motor Drive Ken Berringer Semiconductor Products Sector Discrete Applications Laboratory ruggedness allow the diode to withstand the high stresses im­ INTRODUCTION posed by forced commutation. Energy rated E-FETs are

Contextual Info: MXP1144P PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ̇ Oxide passivated structure for very low leakage currents ̇ Epitaxial structure minimizes

PHOTOVOLTAIC CELL

Abstract: "PHOTOVOLTAIC CELL" Photovoltaic by-pass MXP1144P MXP1144
Contextual Info: MXP1144P PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ƒ Oxide passivated structure for very low leakage currents

1N6688

Abstract: 1N6689 MIL-STD-129 1N6689US
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

Contextual Info: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.

1n6781

Abstract: transistor 649A MIL-PRF-19500 schottky rectifier 1N678
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1998 INCH-POUND MIL-PRF-19500/649A 16 August 1998 SUPERSEDING MIL-PRF-19500/649 18 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,

P6KE30A diode

Abstract: p6ke220ca P6KE36A diode E128 diode P6KE P6KE440C vs bi 187 P6KE10A P6KE11 P6KE12
Contextual Info: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.

1N6683

Abstract: 1N6685 1N6685US 1N6684 1N6640US
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 6 February 1998 METRIC MIL-PRF-19500/625A 6 November 1997 SUPERSEDING MIL-S-19500/625 15 July 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

schottky diode 100A inventory

Abstract: 1N6930UTK1 JS6930 1N6932UTK1 BT 342 project 1N693 ms 1051 1n6930
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/725A 7 September 2005 SUPERSEDING MIL-PRF-19500/725 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR

OMRON LY2 relay

Abstract: OMRON LY4 OMRON LY2 OMRON LY3 relay LY2 relay PFP-100N2 PT08 PT08QN Omron relay ly2n PT14
Contextual Info: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.

lf 721a

Abstract: 721A schottky diode 100A inventory 721a dimensions 1N6895UTK1CS BT 342 project 1N689 1n6892
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/721A 7 September 2005 SUPERSEDING MIL-PRF-19500/721 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

LY2S

Abstract: omron LY4N PTF08A-E LY2ND 562K PFP-100N2 PT08 PT08QN PT11 PTF11A
Contextual Info: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.

1N3993RA

Abstract: 1N3015 PLUS
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 September 1997 INCH POUND MIL-PRF-19500/124H 20 June 1997 SUPERSEDING MIL-S-19500/124G 15 October 1992 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB

mil-s-19500 qpl jantx1n5518b

Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

SP8K1

Abstract: Model 102
Contextual Info: SPICE PARAMETER SP8K1 by ROHM TR Div. * SP8K1 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT SP8K1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=33.638E-6

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of