DIODE BY 238 Search Results

Contextual Info: j. 1. scope This specification provide the ratings and the requirements for high voltage silicon diode ESJA82-10A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

AND8032

Abstract: MTP6N60M Christophe Basso Simulation of 3 phase common mode choke esh3 ESPC AND8032 PCB TL431 model SPICE lisn H.V capacitor 2100 vac
Contextual Info: AND8032/D Conducted EMI Filter Design for the NCP1200 Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE The Bulk Capacitor is a Natural Shield INTRODUCTION As Figure 1a depicts, an SMPS is supplied by a network made of a diode bridge rectifier and a bulk capacitor. Every

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

1N4554B

Abstract: 1220 whs 1N3305 1N3350 1N4549 1N4550 1N4554 MIL-PRF19500 358E 431 regulator
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/358E 23 July 1999 SUPERSEDING MIL-S-19500/358D 26 May 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR

DO213-AB color band

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

diode in40

Abstract: K2P0037-27-33
Contextual Info: K2P0037-27-33 OKI electronic components OCS30 Optical PNPN Switches GENERAL DESCRIPTION The OCS30 is an optical sw itch form ed by com bining an infrared light em itting diode a n d a PN PN elem ent {photothyristor that can w ith stan d high voltages. The device is encased in an 8-pin plastic

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

AA911

Contextual Info: MEK 350-02 DA Fast Recovery Epitaxial Diode FRED Module 1 VRSM VRRM V V 200 200 2 VRRM = 200 V IFAVM = 356 A trr = 150 ns 3 2 Type 3 1 MEK 350-02DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

60N60A

Abstract: c5021-0
Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90

Contextual Info: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads

Contextual Info: MEK 350-02 DA Fast Recovery Epitaxial Diode FRED Module 1 VRSM VRRM V V 200 200 2 VRRM = 200 V IFAVM = 356 A = 150 ns trr 3 2 Type 3 1 MEK 350-02DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

SK 26 diode

Abstract: diode BY 238
Contextual Info: SK 60 GAL 123 Absolute Maximum Ratings Symbol Conditions IGBT &1 &41) * *: $ , -. /0        Values $ , -. 63 /7  ; 2 7 $ , -. 63 /7 $= Units 2-33 5 -3 .6 83 22< 63 & & 9 9 % 83 >>> ? 2.3 / .A B6 238 B6 9 9 % 83 >>> ? 2.3

B333

Contextual Info: SK 60 GAL 123 Absolute Maximum Ratings Symbol Conditions IGBT &1 &41) * *: $ , -. /0        Values $ , -. 63 /7  ; 2 7 $ , -. 63 /7 $= Units 2-33 5 -3 .6 83 22< 63 & & 9 9 % 83 >>> ? 2.3 / .A B6 238 B6 9 9 % 83 >>> ? 2.3

D-68623

Abstract: HTZ260G14K HTZ260G16K HTZ260G19K HTZ260G22K
Contextual Info: HTZ260G Series High Voltage Diode Rectifier Module IF AV = 4.7 A VRRM = 22400 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ260G22K HTZ260G19K HTZ260G16K HTZ260G14K 22400 19600 16800 14000 23800 21000 18200 15400 CIRCUIT DIAGRAM LARONTROL

MEK350-02DA

Contextual Info: □ IXYS MEK350-02DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module ^R S M ^R R M Type 200 V 200 V MEK350-02DA Symbol U ' favm U rm UsM 503 356 1800 A A A TVJ = 45° C 2400 2640 2160 2380 A A A A t t t t TVJ = 45° C = = = = t t t t TVj = 150°C

Mosfet

Abstract: SSF22A5E
Contextual Info: SSF22A5E 20V N-Channel MOSFET Main Product Characteristics: VDSS 20V RDS on 3Ω ID 238mA Pin Assignment Schematic Diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product

Contextual Info: GDSSF22A5E Main Product Characteristics: VDSS 20V RDS on 3Ω ID 238mA Pin Assignment Schematic diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available

toy IR remote control circuit diagram

Abstract: 3mm ir receiver toy remote control circuit diagram remote control toy circuit diagram circuit diagram for IR receiver pcm remote control systems 2 pin ir receiver 238N ir diode remote control HK205
Contextual Info: HM 238N IR RECEIVER FOR REMOTE CONTROL SYSTEM General Description The HM 238N is a miniaturized receiver for use in Infrared carrier frequency PCM remote control systems. A high quality photo diode and a low noise preamplifier are assembled on lead frame, and the epoxy package is designed as IR filter.

NTA4001NT1G

Abstract: NTA4001N NTA4001NT1
Contextual Info: NTA4001N Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75 Features • • • • http://onsemi.com Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate Pb−Free Package for “Green Manufacturing” Compliance

video player circuit diagram

Abstract: cell phone mosfet low vgs on semiconductor marking code sot 3850 DIGITAL CURRENT SOURCE diode marking 714 semiconductor case marking 16 low forward voltage fast diode n-channel mosfet transistor low power
Contextual Info: NTA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features http://onsemi.com •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available V BR DSS

d8p05

Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,