DIODE BAY 46 DATA Search Results

rxmb1

Abstract: RELAY RZ2 SUMMATION current transformer ABB rxtp 18 rxmd 2 current transformer ABB transformers of power station relay rd3 BUSBAR calculation datasheet relay 6 volt
Contextual Info: Bus differential relay using auxiliary summation CT’s REB 101 1-phase 1MRK 505 006-BEN Page 1 Issued: September 2006 Revision: C Data subject to change without notice SE970178 Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults

relay rd3

Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
Contextual Info: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential

Voltage Regulator LM78L09 TO-92 package

Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Contextual Info: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of

Contextual Info: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

Contextual Info: Amphenol Amphenol LMD and LMS Modular Connectors TABLE OF CONTENTS Amphenol LMD & LMS Modular Connectors • Table of Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 • Introduction - Features, Benefits, Performance. .100 • Features, Options & Contact Data. . . . . . . . . .101

pelton turbine

Abstract: 5 MVA generator REG316 MVA generator 1 MVA generator ANSI 87T abb mva transformer 100 MVA transformer large generator protection hydro generator
Contextual Info: A l l » m i w Selection Guides Generator protection i m r k s o i o io - b e n Page 1 August 1997 Changed since November 1995 Data subject to change without notice ABB Network Partner G e n e ra to r P ro tec tio n Generators are designed to run at a high load

HD74HC148P

Abstract: HD74HC148 HD74HC148FPEL PRDP0016AE-B PRSP0016DH-B octal priority encoder
Contextual Info: HD74HC148 8-to-3-line Octal Priority Encoder REJ03D0573-0200 Previous ADE-205-447 Rev.2.00 Oct 11, 2005 Description HD74HC148 encodes eight data lines to three-line (4-2-1) binary (octal). Cascading circuitry (enable input EI and enable output EO) is provided to allow octal expansion without the need for external circuitry. The data inputs and

transistor 431A

Abstract: F7478 li-ion battery SERVICE MANUAL polyswitch 20A multi cell liion charger MARK U9A SOT23-6 200 amp battery charger schematic N10 SOT23-6 h a 431a transistor MCP6292
Contextual Info: MCP1630 Li-Ion Multi-Bay Battery Charger User’s Guide 2005 Microchip Technology Inc. DS51515A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features     -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC

Contextual Info: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features     -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC

Ericsson AB PGR 20312

Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Contextual Info: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and

Diode BAY 46

Abstract: TMJ9910 tangential TNJ9910 SM3 DIODE
Contextual Info: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features ! ! ! ! -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC Environmental Screening Available

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

Contextual Info: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

LMD Modular Connectors

Abstract: lmd and lms modular connectors LMD-4022-36LJ
Contextual Info: Amphenol Aerospace Amphenol LMD and LMS Modular Connectors for Rack & Panel or Cable Attachment LRM Line Replaceable Modules Low Mating Force MIL-DTL-55302 HSB3 HDB3 Hi Speed Other Rectangular Interconnects LMD/LMS Rectangular Interconnects Rack & Panel

Contextual Info: Preliminary Datasheet RJH60F0DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0324EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package

PRSS0003ZH-A

Contextual Info: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.325  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching

RJH60

Abstract: RJH60F RJH60F0DPK SC-65 PRSS0004ZE-A R07DS0234EJ0200
Contextual Info: Preliminary Datasheet RJH60F0DPK R07DS0234EJ0200 Previous: REJ03G1834-0100 Rev.2.00 Dec 14, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.325  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching