BAX12 equivalent
Abstract: BAX12 DO35 MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors Product specification Controlled avalanche diode BAX12
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M3D176
BAX12
DO-35)
BAX12
BAX12 equivalent
DO35
MAM246
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BAX12
Abstract: DO35 MAM246 Controlled avalanche diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12
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M3D176
BAX12
DO-35)
BAX12
DO35
MAM246
Controlled avalanche diode
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avalanche diode
Abstract: BAX12 DO35 MAM246 bax12 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12
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M3D176
BAX12
DO-35)
BAX12
avalanche diode
DO35
MAM246
bax12 philips
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PDF
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BAX14
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES
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M3D176
BAX14
DO-35)
BAX14
MAM246
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PDF
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BAX14
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES
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M3D176
BAX14
DO-35)
BAX14
MAM246
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PDF
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BAX18
Abstract: BAX18 equivalent MAM246 GENERAL PURPOSE DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES
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Original
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M3D176
BAX18
DO-35)
BAX18
BAX18 equivalent
MAM246
GENERAL PURPOSE DIODE
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PDF
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BAX18 equivalent
Abstract: BAX18 MAM246 general purpose diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 18 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES
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Original
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M3D176
BAX18
DO-35)
BAX18
BAX18 equivalent
MAM246
general purpose diode
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PDF
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BAX18 equivalent
Abstract: BAX18 M3D176 MAM246 GENERAL PURPOSE DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
BAX18
DO-35)
BAX18
MAM246
BAX18 equivalent
M3D176
MAM246
GENERAL PURPOSE DIODE
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PDF
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BAX14
Abstract: MAM246 GENERAL PURPOSE DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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Original
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M3D176
BAX14
DO-35)
BAX14
MAM246
MAM246
GENERAL PURPOSE DIODE
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PDF
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BAX12
Abstract: BAX12 equivalent DO35 MAM246 Controlled avalanche diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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Original
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M3D176
BAX12
DO-35)
BAX12
BAX12 equivalent
DO35
MAM246
Controlled avalanche diode
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PDF
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RF sot-23
Abstract: BAV70 BAV99 BAW56 Diode BAV99 SOT23
Text: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features Fast switching speed, High conductance B Surface device type mounting E Moisture sensitivity level 1 C Matte Tin Sn lead finish with Nickel(Ni) underplate Unit (mm)
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BAW56,
BAV70,
BAV99
225mW
OT-23
OT-23
MIL-STD-202,
RF sot-23
BAV70
BAV99
BAW56
Diode BAV99 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Free Space Single Emitter Diode Laser Modules cw, passively cooled, high brightness JOLD-4.2-BAXH-1E Design 424300824 Features: Applications:
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BAX12
Abstract: 74127
Text: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic
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BAX12
BAX12
74127
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PDF
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BAX12
Abstract: No abstract text available
Text: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone
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BAX12
DO-35
bbS3T31
BAX12
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PDF
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BAX18
Abstract: 5U4 rectifier
Text: Philips Semiconductors Product specification General purpose diode BAX18 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX18 is a general purpose diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
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BAX18
DO-35)
BAX18
13ctions
5U4 rectifier
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PDF
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BAX14
Abstract: general purpose diode
Text: Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX14 is a general purpose switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27
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BAX14
BAX14
DO-35)
010flb31
general purpose diode
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PDF
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Untitled
Abstract: No abstract text available
Text: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,
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BAX12
DO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.
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bbS3T31
Q02b3bb
BAX14
DO-35
OD-27
DO-35)
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PDF
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7z66b
Abstract: BAX18 diode td3 general purpose diode
Text: b'iE D N AMER PHILIPS/DISCRETE • tbSa'lBl □□2b372 2 m IAPX BAX18 GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope prim arily intended fo r rectifier applications Q UICK REFERENCE D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage
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2b372
BAX18
DO-35
OD-27
DO-35)
7z66b63
bb53131
0D2b37?
7z66b
BAX18
diode td3
general purpose diode
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbSB'iai DD2b372 2T4 BAX18 l b'BE D IAPX GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope primarily intended for rectifier applications Q U IC K R E F E R E N C E D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage
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DD2b372
BAX18
DO-35
DO-35)
00Sb375
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PDF
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BAX14
Abstract: No abstract text available
Text: • bb53T31 Ü02b3t.b TTÜ * A P X BAX14 N AMER PHILIPS/DISCRETE b'IE D G E N E R A L PU RPO SE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.
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02b3t
BAX14
DO-35
OD-27
DO-35)
7Z88172
BAX14
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PDF
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BAX50
Abstract: Diode BAx Bax51 BAX48 voltage multiple diode bax49 TO77 Diode BAX 12
Text: SILICON PLANAR DIODES ULTRA FAST DIODE MATRIX ASSEMBLIES The B AX 45, B A X 46, BAX 47, B A X 48, B A X 49, B A X 50 and BAX 51 are silicon planar epitaxial diode m atrix assemblies in Jedec T O -72, T O -7 7 or T O -9 6 metal cases*. They are designed for high speed applications.
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Diode BAx
Abstract: No abstract text available
Text: TVS mm PRO EK . DEVICES Engineered solutions fo r th e tra n s ie n t environm ent Transient Voltage Suppressors Low Capacitance Diode A rra y DESCRIPTION This Bi-directional Diode Array TVS fam ily is a series of low capacitance silicon transient suppressors
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S02-431-B101
S02-431-22BB
Diode BAx
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PDF
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BAY41
Abstract: BAY43 bax12 BAY42
Text: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C
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BAY41-BAY43
BAY60
BAY41
BAY42
BAY43
BAX12
225mA
bax12
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PDF
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