DIODE B4 Search Results

Contextual Info: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission

Contextual Info: bBE D N E C • b427525 GQ37477 77S * N E C E LASER DIODE ELECTRONICS INC / NDL5082 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL5082 is a 1 310 nm laser diode especially designed fo r optical data communications. The Mesa-type DC-PBH Double

HL-07

Abstract: NDL5009D NDL5009D1 1310 nm laser diode NEC J 302
Contextual Info: 30E D • b457SE5 005=1243 4 ■ N E C ELECTRONICS INC T~Hl-07 LASER DIODE J N D L5009D 1 310 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTIO N NDL5009D is a 1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH

Contextual Info: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a

Contextual Info: 30E D • b427525 002^252 S / N EC LASER DIODE ELECTRONICS INC NDL5050A 1 550 nm O P TIC A L FIBER COM M UNICATIONS InGaAsP DOUBLE HETERO STR U C TU R E LA SER DIODE DESCRIPTION NDL5050A is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*

nec d 1590

Abstract: code diode b2e L7561 NDL7561P1 diode so3 NDL7561P
Contextual Info: N E C ELECTRONICS INC b2E D • bH27SSS □OBÏRÔS b47 INECE PRELIMINARY DATA SHEET LASER DIODE MODULE N D L7561P, NDL7561P1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION N DL7561P and NDL7561P1 are 1 550 rim new ly developed Multiple Quantum W ell MQW structure pulsed laser diode

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: NEC ELECTRONICS INC fc.EE D • b427S25 D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­

Contextual Info: N E C ELECTRONICS INC b£E ]> • b427525 003?=]^ T4Ü BINECE DATA SHEET NEC LASER DIODE MODULE NDL5776P ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5776P is a 1 550 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

nec laser diode

Abstract: NEC diode NDL3210S NDL3210 TO50 package nec bar code reader NDL321QS code diode b2e
Contextual Info: N E C ELECTRONICS I NC b2E D • b427525 0037^34 TTM « N E C E DATA SHEET NEC LASER DIODE NDL321 OS ELECTRON DEVICE 6 7 0 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3210S is a small package #5.6 mm AIGalnP 670 nm visible laser diode and especially developed for Bar Code Reader.

DIODE T53

Abstract: NDL4103A b427525 NDL4103 T53 diode
Contextual Info: INECE b42?525 D037MbS TS3 L2E D LIGHT EMITTING DIODE N E C NDL4103A ELECTRONICS INC 8 5 0 nm O PTIC AL FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4103A is an AIGaAs double heterostructure light emitting diode, especially designed for a light source fo r optical fiber

NDL5407P

Abstract: NDL5407P1 V8580
Contextual Info: N E C ELECTRONICS INC b2E D • b427525 DD3ñDTfi 7b3 ■ NECE DATA SHEET N EC PHOTO DIODE NDL5407P, NDL5407P1 ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS #80 jam InGaAs PIN PHOTO DIODE MODULE WITH MMF NDL5407P and NDL5407P1 are InGaAs PIN photo diode modules with GI-50/125 multimode fiber pigtail. They are designed

Contextual Info: N E C ELECTRONICS INC b2E ]> b4275B5 003004? 2T1 « N E C E DATA SHEET LASER DIODE NEC NDL5850D1 ELECTRON DEVICE 1 5 50 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5850D1 is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

Contextual Info: 30E D NEC • b4E? 555 OGai Sl l 7 ■ ELECTRONICS INC LA S ER DIODE / NDL5003 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL50Û3 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DCPBH Double Channel Planar Buried Heterostructure can achieve stabfe fundamental oscillation in wide temperature range.

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

FAH DIODE

Abstract: FAH diode 28
Contextual Info: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The

DAD 1000

Abstract: NDL3001 2084m LC-1105 J22686 CT-510
Contextual Info: Sì 6^27525 N E C ELECTRONICS INC. DE II b427525 OOOSbD? b 59C 0 5 6 0 7 D T-41-05 LASER DIODE NDL3001 D A D ,V D A PPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION N D L3001 laser diode is developed for D A D Digital Audio Disk , Video Disk optical head and non impact laser printer. The

SE1003-C

Abstract: E1220 T541 SE1003C Short circuit Isolator in smoke detector
Contextual Info: N E C E L E C T R O N I C S INC 30E D • b4B75SS 002^042 4 ■ T-^l -/3 LIGHT EMITTING DIODE S E 1 0 0 3 -C GaAIAs on GaAs INFRARED EMITTING DIODE DESCRIPTION The SE1003-C is a GaAIAs on GaAs Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On

diode 1310 fiber

Abstract: NDL5004P NDL5004
Contextual Info: 3QE D • b45755S OQSTSaB 1 ■ T-*fr I N E C ELECTRONICS INC / LASER DIODE NDL5004P 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE MODULE D E S C R IP T IO N N D L 5 0 0 4 P is an InGaAsP Laser Diode M odule especially designed fo r long distance high capacity transmission systems. The