BAV70
Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTOJ { Im »F|b3L72S5 6367255 MO TO R O L A SC D I O D E S / O P T O 34C D03ÖS4B h 38243 D T ' 0 2 - of SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high
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b3L72S5
BAV70
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Untitled
Abstract: No abstract text available
Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.
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REJ03G0043-0400
PTSP0002ZA-A
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MARK B3L
Abstract: diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L
Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.
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REJ03G0043-0400
REJ03G0043-0400
PTSP0002ZA-A
MARK B3L
diode b2l
A1L DIODE
zener a1 7
HZU11A1L
HZU11A2L
HZU11A3L
HZU11B1L
HZU11B2L
HZU11B3L
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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MV104
Abstract: SILICON DICE motorola
Text: nOTOROLA SC Ì4 OIODES/OPTO} 6367255 MOTOROLA SC D if | b3Li7ESS D IODES/OPTO 34C 003Û1G4 38104 SILICON TUNING DIODE DICE (continued) D r -ô 7- / ÿ MVC104 DIE NO. LINE SOURCE — DV66 This die provides performance equal to or better than that of the following device types:
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MV104
MVC104
16x30
MV104
SILICON DICE motorola
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in5333
Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Text: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better
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D50DE
DZD900
1C3016
IN3016
IN3785
IN3821
IN5333
IN3051
IN3B20
IN3830
IN5388
DZU 41
IN5333 motorola
in538
1C5366
1C3016
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MBS4991 equivalent
Abstract: SBS thyristor motorola thyristor MBS4991 mbs4993 thyristor device data BS4992
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive
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O-226AA
MBS4991
MBS4992
MBS4993
CTO-226AA)
b3L72S5
MBS4991 equivalent
SBS thyristor
motorola thyristor
mbs4993
thyristor device data
BS4992
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diode b3l
Abstract: MPN3401 MPN3403
Text: MOTOROLA SC -CDIODES/OPTOJ ! 3 14 6 3 6 7 2 5 5 M O T O R O L A SC DE b3L,72SS 003Û103 1 | (DIODES/OPTO 34C 38103 SILICON TUNING DIODE DICE (continued) T -Ô 7 - / * DIE NO. MPNC3401 — s e r ie s LINE SOURCE — DV10 This die provides performance equal to or better than that of
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MPNC3401
MPN3401
MPN3402
MPN3403
MPN3404
MPNC3401
MPNC3402
MPNC3403
MPNC3404
diode b3l
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with
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MBR320/D
MBR320
MBR330
MBR340
MBR350
MBR360
MBR340
MBR360
b3b72Â
MBR320
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schottky b37 diode
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
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MBRF2060CT/D
MBRF2060CT
h3b725
schottky b37 diode
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features
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MBRF2545CT/D
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B140
Abstract: CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l
Text: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode
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CD216A-B120L
DO-216AA
RS-481-A
B140
CD216A-B120L
CD216A-B120R
CD216A-B130L
CD216A-B140
code diode b2l
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GE SC 140 d
Abstract: diode b3l motorola bridge rectifier mda RS 206G
Text: 89D M OTOROLA SC -CDIODES/OPTO} 77439 ~ - X 3 DE I b3L,72S5 0D77M3T 1 "|~ MOTOROLA - 0 5 O rder th is data sheet b y M D A 2 0 0 G /D • i S E M IC O N D U C T O R TECHNICAL DATA M DA200G THRU MDA206G Integral G la ss Passivated Diode A sse m b lie s . diffused glass passivated silicon dice interconnected and molded into rectifier circuit
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0D77M3T
K145BP,
MDA200G
MDA206G
GE SC 140 d
diode b3l
motorola bridge rectifier mda
RS 206G
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smd diode B140
Abstract: smd b140 diode b3l JEDEC DO-216aa code diode b2e DO216AA
Text: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ Cellular phones ■ Low profile ■ PDAs ■ Surface mount ■ Desktop PCs and notebooks ■ Very low forward voltage drop ■ Digital cameras ■ MP3 players CD216A-B120L~B140 MITE Chip Diode
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CD216A-B120L
DO-216AA
smd diode B140
smd b140
diode b3l
JEDEC DO-216aa
code diode b2e
DO216AA
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CD216A-B120L
Abstract: B140 CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l diode b140
Text: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode
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CD216A-B120L
DO-216AA
RS-481-A
CD216A-B120L
B140
CD216A-B120R
CD216A-B130L
CD216A-B140
code diode b2l
diode b140
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diode b2l
Abstract: code diode b2l diode b3l 050 B3L DO216-AA DO216AA
Text: NT IA PL M • *R oH S CO Features ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode
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CD216A-B120L
DO-216AA
diode b2l
code diode b2l
diode b3l
050 B3L
DO216-AA
DO216AA
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code diode b2l
Abstract: B2L DIODE DO216AA B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
Text: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode
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CD216A-B120L
DO-216AA
RS-481-A
code diode b2l
B2L DIODE
DO216AA
B140
CD216A-B120L
CD216A-B120R
CD216A-B130L
CD216A-B140
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diode b140
Abstract: diode b2l code diode b2l B2L DIODE b4s 050 B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
Text: Features • ■ ■ Applications Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD216A-B120L
DO-216AA
RS-481-A
e/IPA0303
diode b140
diode b2l
code diode b2l
B2L DIODE
b4s 050
B140
CD216A-B120L
CD216A-B120R
CD216A-B130L
CD216A-B140
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BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
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b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
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A4008
Abstract: ierc heatsink A4006 in 4008 diode MDA4008 DA4004 diode b3l MDA4006
Text: M O T O R O L A SC -CDIODES/OPTOÏ ISE D I b3L.7ES5 □ □ 7 cítJñT 1 | r - 3 . 3 -0*7 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA M DA4002 M D A4004 M D A4006 M D A4008 R ectifier A s s e m b ly . utilizing individual void-free molded rectifiers, interconnected and mounted on an
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DA4002
A4004
A4006
A4008
A4008
ierc heatsink
in 4008 diode
MDA4008
DA4004
diode b3l
MDA4006
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Untitled
Abstract: No abstract text available
Text: 6 3 6 7 2 54 MOTOROLA SC 96D 8 1 4 7 5 CXSTRS/R F — Tb M OTOROLA DE|b3Li7554 D D0S147S fl Order this data sheet b y MJ25BX100/D | S E M IC O N D U C T O R TECHNICAL DATA M J25BX100 NPN Silicon Power Transistor Module Energy M an age m e n t Series DUAL
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b3Li7554
D0S147S
MJ25BX100/D
J25BX100
MK145BP,
MJ25BX100
C52271
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TRIMMER capacitor 160 pF
Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Text: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e
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b3t72SM
100A101JP50
1N4007
BC337
BD135
TPV5055B
TRIMMER capacitor 160 pF
transistor BC337
TRIMMER capacitor 10-40 pf
22 pf trimmer capacitor
1n4007 mttf
linear amplifier 470-860
Zener diode 9.1
470-860 mhz Power amplifier 5 w
capacitor c3b
TPV5055B
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369A-10
Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
Text: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET
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MTD1N40
369A-10
AN569
MTD1N40
MTD1N40-1
TO-252 N-channel power MOSFET
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mj100bk100
Abstract: transistor su 110
Text: MOTOROLA SC Í X S T R S / R flO F> D E I b3L,7554 007bfl72 H | O rd er th is data sh e et by MJ100BK100/D MOTOROLA E 3 S E M IC O N D U C T O R TECHNICAL DATA ' 6367254 M OTO RO LA SC <X S T R S / R_F _ 80C 76872 NPN Silicon Power Transistor Module D ' 7 -
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007bfl72
MJ100BK100/D
J100B
MK145BP,
J100BK100
DS3721
mj100bk100
transistor su 110
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