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    DIODE 827 Search Results

    DIODE 827 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 827 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


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    04T4504 827C-360-45 04T4504 04T4004 1768/138a, DM/277/08 Jul-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


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    06D3004 06D3004 06D2504 1768/138a, DM/267/08 Jul-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


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    04D4504 04D4504 04D4004 1768/138a, DM/219/06 Jul-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06T3004 5SDF 06T3004 Old part no. DM 827C-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


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    06T3004 827C-620-30 06T3004 06T2504 1768/138a, DM/276/08 Jul-10 PDF

    BAP51-02

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 PDF

    109 DIODE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE PDF

    DIODE A6 sod110

    Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
    Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation


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    OD110 OD110 innovat27 SCB63 DIODE A6 sod110 sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323 PDF

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC PDF

    SMD diode sg 46

    Abstract: SMD diode sg 03
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS


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    BAP50-03 SCA61 SMD diode sg 46 SMD diode sg 03 PDF

    diode a62

    Abstract: BAP51-03 diode smd ED 74 lm 9805
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance


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    BAP51 BAP51-03 diode a62 BAP51-03 diode smd ED 74 lm 9805 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance


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    M3D319 BAP63-02 BAP63-02 OD523 OD523) MAM405 125004/04/pp7 PDF

    marking code k1

    Abstract: BAP51-02 smd marking KM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance


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    M3D319 BAP51-02 OD523 MAM405 OD523) 613514/02/pp8 marking code k1 BAP51-02 smd marking KM PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance


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    M3D319 BAP63-02 BAP63-02 OD523 OD523) MAM405 125004/04/pp7 PDF

    smd code marking A8 diode

    Abstract: smd diode A8 smd diode code a8
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance


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    M3D049 BAP50-03 OD323 MAM406 OD323) 125004/00/02/pp8 smd code marking A8 diode smd diode A8 smd diode code a8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD


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    M3D319 1PS79SB10 SC-79 MAM403 SC-79) SCA60 115104/00/01/pp8 PDF

    AN4506

    Abstract: DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
    Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs APPLICATIONS • Freewheel Diode ■ Antiparallel Diode ■ Inverters


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    DSF21035SV DS4176-1 DS4176-2 0000A DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 AN4506 DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35 PDF

    DS4231

    Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
    Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.


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    DSF21060SV DDS4231-2 DS4231-3 6000A DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DS4231 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60 PDF

    smd schottky diode marking 72

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic


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    M3D049 1PS76SB70 OD323 MAM283 OD323) SCA60 115104/00/01/pp8 smd schottky diode marking 72 PDF

    Marking Code 72

    Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
    Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection


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    M3D102 1PS70SB20 OT323 SC-70) MAM394 613514/01/pp8 Marking Code 72 smd schottky diode marking 72 B 817 marking code 203 sot323 package PDF

    M50D0

    Abstract: 1000 Amp current diode M50100TB1200 M50D E72445 M5060 crydom rectifier
    Text: Series M50 Diode 60-100 Amp • DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable


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    E72445) 120VSpecifications D-66687 M50D0 1000 Amp current diode M50100TB1200 M50D E72445 M5060 crydom rectifier PDF

    1PS59SB20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection


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    M3D114 1PS59SB20 SC-59 MLC357 MSA314 SCA60 115104/00/01/pp8 1PS59SB20 PDF

    BAS240

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.


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    M3D154 BAS240 MAM214 OD110) 613514/01/pp8 BAS240 BP317 PDF

    Untitled

    Abstract: No abstract text available
    Text: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard C3YJDM Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge


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    E72445) D-66687 PDF

    BAS270

    Abstract: BP317 BAS27
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.


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    M3D154 BAS270 MAM214 OD110) 613514/01/pp8 BAS270 BP317 BAS27 PDF