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    DIODE 6A8 Search Results

    DIODE 6A8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 6A8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IFS100B12N3E4

    Abstract: C5363 IFS100B12N3E4B
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current


    Original     		PDF IFS100B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 BC33694 1231423567896AB C5363 IFS100B12N3E4B

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original     		PDF IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6

    diode F4 6A

    Abstract: 4F36F123
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original     		PDF IFS100B12N3E4 428654F4 D3264 ECFC24 B32DC D3692C CD3288 ECFC26 B32DC6 6934F diode F4 6A 4F36F123

    6A10 DIODE

    Abstract: 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10
    Text: Axial Diode Series DIODE RECTIFIERS GENERAL PURPOSE Maximum Peak TYPE Reverse Maximum Average Rectified Maximum Maximum Forward Peak Reverse Current at Half-wave Resistive Surge Current Current at load 50HZ Voltage 50HZ PRV and Maximum Forward Voltage at TA=25°C


    Original     		PDF 1N4001 DO-41 1N4002 1N4003 1N4004 1N4005 DO-15 6A10 DIODE 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10

    zener 6c2

    Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
    Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		PDF BZX84C-BS OT-23 OT-23 MIL-STD-202E zener 6c2 sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C

    SMD MARKING CODE 5a6

    Abstract: SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd
    Text: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2


    Original     		PDF MMBZ33VA 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1038 SMD MARKING CODE 5a6 SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd

    5a6 zener diode

    Abstract: SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd
    Text: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2


    Original     		PDF MMBZ33VA MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 5a6 zener diode SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd

    Diode BA 148

    Abstract: BA 811
    Text: SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor /- /- /$- / 11 ?11


    Original     		PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.


    Original     		PDF REJ03G1771-0100 PUSF0002ZD-A

    4C3 zener

    Abstract: GLZ4.3B zener 4c3
    Text: GLZ SERIES 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction     500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference


    Original     		PDF 500mW MIL-STD-202, 4C3 zener GLZ4.3B zener 4c3

    4C3 zener diode

    Abstract: 6c2 diode MARKING CODE 3B0 RKZ3.9BKU
    Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.


    Original     		PDF REJ03G1771-0100 PUSF0002ZD-A 4C3 zener diode 6c2 diode MARKING CODE 3B0 RKZ3.9BKU

    4C3 zener diode

    Abstract: 9c1 zener diode 5c1 zener diode zener 6c2 6b2 zener diode diode zener 33c zener 3a6 zener 4c3 5B1 zener diode zener diode 6c2
    Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.


    Original     		PDF REJ03G1771-0100 PUSF0002ZD-A 4C3 zener diode 9c1 zener diode 5c1 zener diode zener 6c2 6b2 zener diode diode zener 33c zener 3a6 zener 4c3 5B1 zener diode zener diode 6c2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.


    Original     		PDF REJ03G1771-0100 PUSF0002ZD-A

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    1n5gt

    Abstract: diode aa 90 1A7GT 6J5G 6j5gt 1A5GT 6p5g 6f5G 6j5gx IN50
    Text: TUB! 1A5GT 1A7GT 1C5GT 1D8GT ESSAYÉ SUR POSTE 8 -A A P entode H eptode P entode Diode Triode P entode 1H5GT Double D iode-Triode Pentode 1N5GT T étrode 1Q5GT H eptode “ 6A8GT“ Triode ~6F5GT“ 6H6G tT Double Diode Triode 6J5GT Am­ poule C hauffage F ilam en t


    OCR Scan     		PDF

    4A3 enter diode

    Abstract: diode a62 zm 1021
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification Voltage regulator double diodes PZM-NA series FEATURES PINNING • Total power dissipation: max. 220 mW per diode PIN DESCRIPTION • Small plastic package suitable for surface mounted


    OCR Scan     		PDF OT346 OT346; 4A3 enter diode diode a62 zm 1021

    70l7gt

    Abstract: 6k7g 35z5gt 6k6gt 25L6GT 6q7g 70L7-GT 35L6GT 35z5 12k7gt
    Text: SYLVANIA 6 J7 G T Pen tod e 6K 6G T Pentod e 6K 7G T Pentod e "ek B G T " Triode-H exode 6Q 7G T D ouble D iode-Triode D ouble Diode H eptode 12A8GT 6.3 6.3 6K 7G 6K 8G 6Q7G 6.3 6.3 0.30 LE TUBE 0.30 6A8G 12B 8G T Pen tod e-T riode ~ 8 -T T 9 -E 0.15 12F5G T


    OCR Scan     		PDF 12B8GT 12F5GT 12J5GT 12K7GT 25A7G. 25L6G. 25Z6G. 35LGG. 70l7gt 6k7g 35z5gt 6k6gt 25L6GT 6q7g 70L7-GT 35L6GT 35z5 12k7gt