DIODE 6.6A RECTIFIER Search Results
DIODE 6.6A RECTIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CMG03A |
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General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT |
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| CRG09A |
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General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT |
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| CRG11B |
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General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT |
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| CRG10A |
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General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT |
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| CRG04A |
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General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT |
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DIODE 6.6A RECTIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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IRF6215PbF -150V O-220 O-220AB. O-220AB IRF1010 | |
diode 6.6A rectifierContextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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IRF6215PbF -150V O-220 O-220AB. O-220AB IRF1010 diode 6.6A rectifier | |
diode 66aContextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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IRF6215PbF -150V O-220 O-220AB. O-220AB IRF1010 diode 66a | |
irf6215pbfContextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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IRF6215PbF -150V O-220 O-220AB. O-220AB IRF1010 irf6215pbf | |
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Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
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PD-94165A O-257AA) IRF5Y6215CM -150V 5M-1994. O-257AA. | |
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Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
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PD-94165A O-257AA) IRF5Y6215CM -150V 5M-1994. O-257AA. | |
IRF5Y6215CMContextual Info: PD - 94165 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
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O-257AA) IRF5Y6215CM -150V -150V, O-257AA IRF5Y6215CM | |
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Contextual Info: PD -9.1479A International IGR Rectifier IRF6215 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -150V ROS on = 0.29Q |
OCR Scan |
IRF6215 -150V O-220 | |
IRF6215Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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91479B IRF6215 -150V O-220 IRF6215 | |
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Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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91479B IRF6215 -150V O-220 appl245, | |
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Contextual Info: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2 |
OCR Scan |
IRF6215 | |
IRF6215Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier |
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91479B IRF6215 -150V O-220 IRF6215 | |
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Contextual Info: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated |
OCR Scan |
IRF6215S/L IRF6215S) IRF6215L) | |
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Contextual Info: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated |
OCR Scan |
IRFR6215) IRFU6215) IRFR/U6215 -150V | |
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IRFR6215PBF
Abstract: IRFR6215 IRFU6215
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PD-95080A IRFR6215PbF IRFU6215PbF IRFR6215) IRFU6215) -150V surfa16 EIA-481 EIA-541. EIA-481. IRFR6215PBF IRFR6215 IRFU6215 | |
IRFR6215
Abstract: IRFU6215
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PD-95080A IRFR6215PbF IRFU6215PbF IRFR6215) IRFU6215) -150V O-252AA) EIA-481 EIA-541. EIA-481. IRFR6215 IRFU6215 | |
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Contextual Info: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V |
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PD-95080A IRFR6215PbF IRFU6215PbF IRFR6215) IRFU6215) -150V EIA-481 EIA-541. EIA-481. | |
irf 940
Abstract: 600-RG IRF 860
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IRFR/U6215PbF IRFR6215) IRFU6215) -150V O-252AA) EIA-481 EIA-541. EIA-481. irf 940 600-RG IRF 860 | |
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Contextual Info: PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant |
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Contextual Info: PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant |
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AUIRF6215 -150V | |
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Contextual Info: AUTOMOTIVE GRADE PD-96302A AUIRFR6215 HEXFET Power MOSFET Features l P-Channel l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant |
Original |
PD-96302A AUIRFR6215 -150V | |
marking code AARContextual Info: International IO R Rectifier P D - 9.1506 PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Voss = -55V Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated ^ D S (o n ) |
OCR Scan |
IRFR9024N) IRFU9024N) 1RFR/U9024N EIA-481. marking code AAR | |
U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
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OCR Scan |
IRFR9024N) IRFU9024N) 1RFR/U9024N 4A5545E 002flL07 U9024N BSS 250 IRFR P-Channel MOSFET | |
AEC-Q101-005
Abstract: AUIRF
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AUIRF6215S -150V AEC-Q101-005 AUIRF | |