DIODE 5817 SPECIFICATIONS Search Results

1N817

Abstract: 1N5817 1N5819 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
Contextual Info: Philips Semiconductors Product specification S ch o ttky b arrier dio des 1N 5817; 1 N 5 818; 1N 5819 FEATURES DESCRIPTION • Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages

Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

diode 5817 specifications

Abstract: transistor sms SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS SPD5819VSMS diode 5817
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

SPD5818

Abstract: SPD5817 SPD5817SMS SPD5817VSMS SPD5819 SPD5819SMS SPD5819VSMS
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

diode 5817 specifications

Abstract: MIL-STD-750 Method 2076 diode 5819 SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS SPD5819VSMS
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

RS0293

Abstract: RS0293L MIL-STD-750 Method 2076 diode 5817 specifications SPD5817 SPD5817SMS SPD5817VSMS SPD5818 SPD5819 SPD5819SMS
Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

MIL-STD-750 Method 2076

Contextual Info: SPD5817 thru SPD5819 SPD5817SMS thru SPD5819SMS SPD5817VSMS thru SPD5819VSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 1 AMP

1N 5819 diode

Contextual Info: 1N5817-1N5819 Vishay Lite-On Power Semiconductor 1 .OA Schottky Barrier Rectifiers Features • S c h o ttk y b a rrie r ch ip • G u a rd ring die c o n s tru c tio n fo r tra n s ie n t p ro te c tio n • H igh s u rg e c a p a b ility • L o w p o w e r loss, hig h e ffic ie n c y

1N5817

Abstract: 1N5819 SPD5817 SPD5819 Solid State Devices for 1N5817 N3BB
Contextual Info: SOLI» STATE DEVICES INC 12E 1 |fl3bbDll □ □ □ n C H =] 5 R 8 /3 D THRU 1 5 R 8 /3 D 100 AM P EPIO Nn HIGH SPEED RECTIFIER 5 0 -1 5 0 V O LT S CASE STYLE R TO—3 WITH .060 PINS MAXIMUM RATINGS FEATURES RADIATION TOLERANT ULTRA FAST RECOVERY 7 5 NSEC MAX

diode marking N9

Contextual Info: DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.

Contextual Info: DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications, where board space is at a

Contextual Info: BAS16WT1G, SBAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: BAV70WT1G, SBAV70WT1G Dual Switching Diode Common Cathode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: BAV70WT1G, SBAV70WT1G Dual Switching Diode Common Cathode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NSVBAS21

Abstract: marking code js sod323
Contextual Info: BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements

Contextual Info: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Diode marking CODE 5M SOD

Contextual Info: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

diode T3 Marking

Contextual Info: NUP1301ML3T1, SZNUP1301ML3T1 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .

Contextual Info: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements

SMMBD2835LT1G

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

BAV99LT1G

Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318