laser transmitter circuit diagram
Abstract: Laser Diode 10 pin 1300 laser diode rise time 780nm laser diode module laser diode 2 Wavelength Laser Diode 6 pin laser diode 780nm laser diode 8 mW 780NM Laser-Diode apc be 500 ups
Text: 19-0323; Rev 2; 8/95 Single +5V, Fully Integrated, 1.2Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel 622Mbps SDH/SONET _Features ♦ Rise Times Less than 250ps
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531Mbps
1062Mbps
622Mbps
250ps
MAX3261CCJ
MAX3261C/D
21-0054B
laser transmitter circuit diagram
Laser Diode 10 pin
1300 laser diode rise time
780nm laser diode module
laser diode
2 Wavelength Laser Diode
6 pin laser diode
780nm laser diode 8 mW
780NM Laser-Diode
apc be 500 ups
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laser driver TTL circuits
Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
Text: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs
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25Gbps
531Mbps
1062Mbps
250ps
MAX3261CCJ
MAX3261ECJ
MAX3261E/D
laser driver TTL circuits
4023N
6 pin laser diode
automatic laser power control
MAX3261
MAX3261CCJ
MAX3261ECJ
4015N
MAX3261-FG07
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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BY588
Abstract: No abstract text available
Text: {[ N AMER P H I L I P S / D I S C R E T E SSE D • ^53131 - Q01t71t 2 BY588 T - û i- ie r BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. T he device is intended fo r use as efficiency diode in horizontal deflection circuits between base and em itter terminals
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bbS3T31
0Qlb71b
BY588
OD-57.
0aib71&
7Z88947
BY588
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Z6 DIODE
Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
Text: Diode, Zener Silicon Planar Voltage Regulator Diode Feature: Low voltage general purpose voltage regulator diode. Absolute Maximum Ratings Ta = 25°°C Description Symbol Working Voltage Tolerance Value Unit ±5 % 250 mA Repetitive Peak Forward Current IFRM
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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BA221
Abstract: ba221 d BB533
Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature
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Q02bim
BA221
DO-35
DO-35
BA221
ba221 d
BB533
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DL-3147-161
Abstract: No abstract text available
Text: Ordering number : EN5864 Red Laser Diode DL-3147-161 -261 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-161(-261) is index guided 650 nm (Typ.) AIGalnP laser diode with low threshold current and high operating temperature. The low
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EN5864
DL-3147-161
DL-3147-161
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en 586-3
Abstract: EN5863 DL-3147-141 DL-3147-14K-241
Text: Ordering number : EN5863 Red Laser Diode DL-3147-141 -241 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-141(-241) is index guided 645 nm (Typ.) AIGalnP laser diode with low threshold current and high operating temperature. The low
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EN5863
DL-3147-141
DL-3147-141
en 586-3
EN5863
DL-3147-14K-241
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5867A DL-3149-054 Red Laser Diode DL-3149-054 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold
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EN5867A
DL-3149-054
DL-3149-054
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CQ 637
Abstract: DL-3038-023
Text: Ordering number : EN5854 Red Laser Diode DL-3038-023 AIGalnP Laser Diode Overview Package Dimensions DL-3038-023 is 635 nm Typ. AIGalnP laser diode with low threshold current. The low threshold current and short wavelength are achieved by use of a strained
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EN5854
DL-3038-023
DL-3038-023
CQ 637
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NEC JAPAN 567
Abstract: NX8563LF PX10160E
Text: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563LF
NX8563LF
NEC JAPAN 567
PX10160E
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670NM Laser-Diode
Abstract: DL-3148-033
Text: Ordering number : EN5860 Red Laser Diode D L -3 148-033 Index Guided AIGalnP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold
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EN5860
DL-3148-033
DL-3148-033
635nm
670nm
670NM Laser-Diode
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601 Opto isolator
Abstract: NX8563LF PX10160E
Text: LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8563LF
NX8563LF
601 Opto isolator
PX10160E
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diode hp 2835 schottky
Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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DL-3149-054
Abstract: No abstract text available
Text: Ordering number : EN5867 Red Laser Diode D L -3 149-054 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AIGalnP laser diode with low threshold current and high operating temperature. The low threshold
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EN5867
DL-3149-054
DL-3149-054
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laser barcode reader circuit
Abstract: EN5862 DL-3147-041 DL3147-041
Text: Ordering number : EN5862 Red Laser Diode D L -3147-041 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-041 is index guided 645 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current
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EN5862
DL-3147-041
DL-3147-041
laser barcode reader circuit
EN5862
DL3147-041
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601 Opto isolator
Abstract: NX8562LF PX10160E
Text: LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8562LF
NX8562LF
601 Opto isolator
PX10160E
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EN5867
Abstract: No abstract text available
Text: Ordering number : EN5867A DL-3149-054 Red Laser Diode DL-3149-054 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold
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EN5867A
DL-3149-054
DL-3149-054
EN5867
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5082-2835 diode
Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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DL-3038-041
Abstract: No abstract text available
Text: Ordering number : EN5856 Red Laser Diode D L-3038-041 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3038-041 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current
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EN5856
DL-3038-041
DL-3038-041
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EN5869
Abstract: DL-3149-056
Text: Ordering number : EN5869 Red Laser Diode D L -3149-056 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3149-056 is 670 nm Typ. index guided AIGalnP laser diode with low threshold current. The low threshold current and short wavelength are
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EN5869
DL-3149-056
DL-3149-056
EN5869
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DL-3147-021
Abstract: No abstract text available
Text: Ordering number : EN5861 Red Laser Diode D L -3147-021 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AIGalnP laser diode with low threshold current. The low threshold current is achieved by a strained
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EN5861
DL-3147-021
DL-3147-021
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DL-3148-021
Abstract: En58
Text: Ordering number : EN5858 Red Laser Diode D L -3148-021 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3148-021 is 635 nm Typ. index guided AIGalnP laser diode with low threshold current. The low threshold current and short wavelength are
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EN5858
DL-3148-021
DL-3148-021
En58
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