DIODE 409 SMD Search Results

AA7 smd diode

Abstract: C10T60F C10T60F-11A FCF10A60 GCF10A60
Contextual Info: FAST RECOVERY DIODE C10T60F C10T60F-11A 11A /6 0 0 V / trr : 40nsec 10.4C.409 9.8 .3S6) FEATURES o | SQUARE-PAK I TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T60F o Tabless TO-220: C10T60F-11A o T0-220AB : GCF10A60 o TO-22ÛAB Fully Molded Isolation

smd diode 1139

Abstract: NX DIODE SMD 1461 smd s5u0
Contextual Info: 4.silg9> AM \:z~ 10.4i.409 o|SQUARE - PAK] TO-263AB SMD) Packaged in 24mm Tape and Reel : C10T»*Q oTabless T0-220:C10T06Q-11A °Dual Diodes— Cathode Common 0 Low Forward Voltage Drop C10T05Q C10T06Q C10T06Q-11A 11A /50— 60V SCHOTTKY BARRIER DIODE 1.81.071 r*

20113

Abstract: Diode 20A/30v C20T03QL C20T03QL-11A S251 23S-I 10417 QL-11A
Contextual Info: SCHOTTKY BARRIER DIODE C20T03QL C20T03QL-UA 2 0 A /3 0 V 4.8UB9 ,. 4Ì4Ì.173) . I0.4i.409) r m m jy s) FE A T U R E S , 10.61417) I Ô.0.378) 10.K.398) I 8.5 .335)l o | SQUARE-PAK | TO-263AB (SMD) Packaged in 24mm T ape and Reel ; C 2 0 T -Q L •*-

x405

Abstract: 7U46 smd UJ 99 C10T60F C10T60F-11A FCF10A60 GCF10A60
Contextual Info: FAST RECOVERY DIODE 4.8 .I89 4.4U 73)' . 10.4i.409) [• 9.8Ì386) FEATURES 4.0(.157) 3.01.118) 1.4f.Q55) I o Tabless TO-220: C10T60F-11A 9.1 (.358) 8.5C335) H3k— (.0 1 2 ) S O L D E R L IN G PA D -10.5(.413>— o T0-220A B Fully Molded Isolation : FCF10A60

Contextual Info: FAST RECOVERY DIODE . FEATURES 10.4 .409 9.8 (.3 8 6 ) 4 .8(.189)_ 4 .4 U 7 3 ) JQ _ L -y 10 .6 i.4 1 7 ) 9 .6 (3 7 8 ) 10.11.396)1 S .5 (.3 3 5 )| ^nîntr1 * o Tabless TO-220: C10T60F-11A 1. 2.751.108) . 2.35Ü 925) 7 .5 (.2 95 ) : GCF10A60 ° TO-220AB Fully Molded

Contextual Info: SCHOTTKY BARRIER DIODE 22a / 9o~ ioov 'j g « c l S ï î ^ n î S u ! f S f o FEATURES o [ SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and R e e l: C20T-Q o Tabless TO-220: C20T-Q-11A o T0-220AB : GCH20A- o T0-220AB Fully Molded Isolation : FCH20Ao Dual Diodes - Cathode

Contextual Info: OPTEK P roduct B ulletin OPR2100 A u g u st 1996 Six Element SMD Photodiode Array Type OPR2100 - .031 0.8 —^ ( - .130(3.3) r | - .237(6.0) .071(1.8) .213(5.4) .362 x .236 GROUND PLANE* (9.2 x 6.0) r - DIA .0315(0.80) r W ~ I ON SUBSTRATE .354(9.0) .409(10.4)

ajw smd

Abstract: OPR2100 photodiode encoder
Contextual Info: OPTEK Product Bulletin OPR21ÛO August 1996 Six Element SMD Photodiode Array Type OPR2100 .0 3 1 0 .8 — ] \ - r .130(3.3) h - .237(6.0) .362 .236 GROUND PLAN E* (9.2 x 6.0) r - DIA .0315(0.80) A D E n ON SUBSTRATE T à .07 1(1.8) .354(9.0) .213(5.4) T

double coil latching relays smd

Abstract: ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ20A03Z ARJ2203 ARJ2212 ARJ2224
Contextual Info: SMD RELAYS WITH 8GHz CAPABILITIES FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics 50Ω, at 5GHz V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB (Between open contacts) Min. 30dB (Between contact sets) • Surface mount terminal

OPR21QO

Abstract: photodiode encoder MOTOR-ENCODER
Contextual Info: .Q-PILK Product Bulletin OPR2100 A ugust 1996 Six Element SMD Photodiode Array Type OPR21QO .0 3 1 0 .8 - h- .130(3.3) - .237(6.0) .071(1.8) r - . 3 6 2 x .236 GROUND PLANE* (9.2 x 6.0) r - DIA .0315(0.80) V, i 0N SUBSTRATE .354 9.0) .213(5.4) .409(10.4)

R-4737

Abstract: double coil latching relays smd
Contextual Info: SMD RELAYS WITH 8GHz CAPABILITIES FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics 50Ω, at 5GHz V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB (Between open contacts) Min. 30dB (Between contact sets) • Surface mount terminal

R-4737

Abstract: HP85052B HP8510C arj2012 ARJ20A12 ARJ20A4H arj22a4hz Radiall R125 ARJ2003 ARJ204H
Contextual Info: SMD RELAYS WITH 8GHz CAPABILITIES FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics 50Ω, at 5GHz V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB (Between open contacts) Min. 30dB (Between contact sets) • Surface mount terminal

Matsushita polarized relay 7 pin

Abstract: Matsushita PCB relay Matsushita relay nais relay 24V 10 A rf sealer circuit ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03
Contextual Info: RJ ARJ 9.00 .354 14.0 .551 8.20 .323 14.0 .551 9.00 .354 8.20 .323 RoHS Directive compatibility information http://www.nais-e.com/ SMD RELAYS WITH 8GHz CAPABILITIES RJ RELAYS (ARJ) FEATURES TYPICAL APPLICATIONS • Excellent high frequency characteristics (50Ω, at 5GHz)

Matsushita relay 12V pc

Abstract: ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ20A03Z ARJ2203 ARJ2212 ARJ2224
Contextual Info: rj.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S S “ RJ ARJ2 SMD RELAYS WITH 8GHz CAPABILITIES RJ-RELAYS FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB

HF relay high current rating

Abstract: rjrelays R-4737 RJ Relay ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ2203
Contextual Info: rj.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S S “ RJ ARJ2 SMD RELAYS WITH 8GHz CAPABILITIES RJ-RELAYS FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB

DIODE F7 SMD

Contextual Info: International gggRectifier Provisional Data Sheet No. PD-9.1417 REPETITIV E AVALANCHE AND H E X FE T * T R A N SIST O R dv/dt RATED IR F N 3 7 1 0 N -CHANNEL Product Summary 100 Volt, 0.028Q, HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve

marking 6a2 smd

Contextual Info: BSS 123 In fin e o n technologies SIPMOS Small-Signal T ransistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type l'os fc BDS(on) Package Marking BSS 123 100 V 0.17 A 6Í2 SOT-23 SAs Type BSS 123 BSS 123

smd diode sm 3c

Abstract: tr/smd diode sm 3c
Contextual Info: |p |-0 p p jQ j-jQ P |Q | Provisional Data Sheet No. PD-9.1543A IQ R Rectifier HEXFET POWER MOSFET IRFN0S4 N -C H A N N E L 60 Volt, 0.020Q HEXFET Product Summary H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis­

11A3 ST

Abstract: diode 533 18A --/M/MARKING 11A3
Contextual Info: I p j j- 0 f p i Q Ü Q H Q I Provisional Data Sheet No. PD-9.1553 IO R Rectifier HEXFET POWER MOSFET IRFN9140 N-CH A NN EL Product Sum m an 1 -100 Volt, 0.20Q HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

FR07* diode

Abstract: FR07
Contextual Info: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

smd diode S4 64a

Contextual Info: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis­ tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.

Contextual Info: AUIRFB8409 AUIRFS8409 AUIRFSL8409 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

BDS60

Abstract: S80 SMD BDS60A BDS60B BDS60C UBB018 smd npn darlington FAG 29 diode
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1M1 BDS60/60A/60B/60C PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP Silicon power transistors in a

Contextual Info: Provisional Data Sheet No. PD-9.1553A International IS R Rectifier HEXFET POWER MOSFET IRFN9140 P-CHANNEL Product Summary -100 Volt, 0.20ÎÎ HEXFET H E X F E T technology is th e key to International Rectifier’s advanced line of power M O SFET transis­