TSC5304D
Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Text: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5304D
TSC5304DCH
O-251
TSC5304DCP
O-252
oth022
O-251
TS5304D
TSC5304D
power transistor Ic 4A NPN to - 251
TSC5304DCH
TSC5304DCP
TS530
NPN Transistor 10A 400V
TSC5304
ic 565 pin diagram
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pin diagram of ic 4440
Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
Text: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5305D
O-263
TSC5305DCZ
O-220
TSC5305DCM
O-220
O-263
TS5305D
pin diagram of ic 4440
IC 0116 DC
TSC5305D
TSC5305DCM
TSC5305DCZ
ic 4440
transistor Vceo 400V, Vebo 9v, Ic 10A
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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marking c08
Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
marking c08
C08 marking
250V transistor npn 2a
BM 0228
marking code C5
power transistor Ic 4A NPN to - 251
1A MARKING CODE
C5 MARKING TRANSISTOR
marking code B2
NPN Silicon Power Transistor DPAK
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TP 1078
Abstract: transistor 926
Text: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC128D
O-220
O-263
TSC128DCZ
TSC128DCM
O-263
50pcs
800pcs
TP 1078
transistor 926
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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TSC5304ED
Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304ED
power transistor Ic 4A NPN to - 251
TSC5304EDCP
transistor c10
TO-252 marking C10
marking C10
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con8a
Abstract: L5973 L7805 TO220 varistor 2k2 varistor C21 2u55 STPS20 HCF401 U26A NTC 2.2 varistor
Text: 5 4 3 2 C1 L1 15mH D1 R12 T5 TRANSFORMER 1 C2 4 - 100n 400V + 1 1 D D7 4 1 C21 1n 1k 100n 400V t R1 t CON2 FUSE Varistor 2 1 3 J22 2 DIODE BRIDGE F1 F D 3 2 N C3 220u 450V NTC 16 ohm C4 STPS8H100 TRANSIL D8 10n 600V 12 +13.8V 4 20K 6W Cout1 330u 6 D5 C38 330u
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STPS8H100
1N4148
STTH106
BC337
STP10NK60Z
L5991
PC817
HCF4011B
TL431
con8a
L5973
L7805 TO220
varistor 2k2
varistor C21
2u55
STPS20
HCF401
U26A
NTC 2.2 varistor
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fast recovery diode 400v 5A
Abstract: No abstract text available
Text: ESC011M-15 5A (1500V / 5A, 400V / 5A ) Outline drawings, mm 15.5 ±0.3 2.1±0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain 3. Source JEDEC High voltage by mesa design 3.2 +0.3 20 Min Damper diode for high definition T.V. and
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ESC011M-15
fast recovery diode 400v 5A
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Untitled
Abstract: No abstract text available
Text: n - n x V 'C X -Y - Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D4L40 400V 4A • t r r 50ns m m •SRSÎÜ •75-rjn -f-ju •^ B s O A .P ,^ • i l i â s FA RATINGS Absolute Maximum Ratings a i 5 E-fSymbol Conditions a Item Storage Temperature
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D4L40
75-rjn
50HziE5g
50HzjE
J515-5
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Untitled
Abstract: No abstract text available
Text: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 400V 8A H S S 'iX >trr50ns >SRS;H > ^ B s O A w0 , ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature
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D8LC40
trr50ns
J515-5
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Untitled
Abstract: No abstract text available
Text: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LD40 400V 8A H S S 'iX >trr50ns >SRS;H > ^ B s O A w0 , ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature
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D8LD40
trr50ns
D8LD40
50HziE5K
J515-5
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode UHM' vi& E l OUTLINE DIMENSIONS D4L40 Case : ITO-220 ' 400V 4A •ffiy -r x # trr5 0 n s 0.7 •S R C Ü • 7U • * « . OA, p.?« •an. a « , fa • Ê të ft RATINGS A bsolute M ax im u m Ratings m S ym bol m & tft
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D4L40
ITO-220
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: International ^Rectifier PD-2.465 HFA135NH40 Ultrafast, Soft Recovery Diode H EXFRED " LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 400V ? ▼ T V F = 1.3V Qrr * = 2300nC
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HFA135NH40
2300nC
37066IR
ViaLiguria49
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-2.452 HFA180NH40 Ultrafast, Soft Recovery Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters ? I T V r = 400V V f = 1.35V Qrr * = 2600nC
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HFA180NH40
2600nC
Liguria49
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D4L40
Abstract: No abstract text available
Text: □ — n ^ S T -T * — K m tm . Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D4L40 400V 4A • fctem R A T IN G S Absolute Maximum Ratings s m Item Symbol un&m it- ~-— O perating J u n c tio n Tem perature Maximum Reverse Voltage
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D4L40
D4L40
50HzIE3£
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Untitled
Abstract: No abstract text available
Text: y PD-2.468 International [tor]Rectifier HFA90NH40 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 400V 1 ▼ T VF = 1.3V Qrr* = 1200nC
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HFA90NH40
1200nC
60A/ps
Liguria49
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Untitled
Abstract: No abstract text available
Text: PD-2.474 bïtemational [torjRectifier HFA75MC40C Ultrafast, Soft Recovéry Diode HEXFRED Features V r = 400V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC ANODE COMMON ANODE
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HFA75MC40C
500nC
90A/pS
Liguria49
3150utram
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD-2.453 International ¡Rectifier [KSR HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 Features LUG TERMMAL AN O DE2 Vr = 400V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters
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HFA240NJ40C
2300nC
70A/ps
37066IR
ViaLiguria49
002202D
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Untitled
Abstract: No abstract text available
Text: PD-2.473 International [ìq r ì Rectifier HFA80NC40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMON CATHODE Features V r = 400V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I 1' J V F = 1.3V _ Qrr*
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HFA80NC40C
500nC
Liguria49
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Untitled
Abstract: No abstract text available
Text: PD-2.471 bitemational ^Rectifier HFA80NC40CSM Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features V r = 400V cJ • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I , -H 1 V F = 1 .3 V Qrr * = 5 0 0 n C
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HFA80NC40CSM
Saalburgstrasse157
37066IR
Liguria49
0GEn55
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Untitled
Abstract: No abstract text available
Text: PD-2.472 International ^R ectifier HFA80NC40CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features VR = 400V O • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC d i r e c M / d t *
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HFA80NC40CSL
500nC
Liguria49
4A55452
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Untitled
Abstract: No abstract text available
Text: □ - □ 3 . Super Fast Recovery Diode Single In-line Package OUTLINE DIMENSIONS D4SBL40 400V 4A • i& M X • S IP A ° y !r —V • m I FSM m • S R S ÎÜ •TVs m m •O A s FA RATINGS Absolute Maximum Ratings a Item Storage Temperature Operating Junction Temperature
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D4SBL40
D4SBL40
J515-5
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