DIODE 4003 Search Results

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.

IN4003

Abstract: 1N4003A 175t2
Contextual Info: 7020^^^ GDOTGlb T03 iRHn Page ROHrn Speculation Products ] 01 Type Glass Sealed Rectifying Diode IN4003A Glass Sealed Rectifying Diode 1. PRODUCTS Silicon diffused junction 1N4003A 2. TYPE 3. APPLICATION General rectification 'Glass seal 4. FEATURES 'Snail size

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

transistor l7805cv

Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
Contextual Info: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: nishant.omar@st.com Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor

K 4005 transistor

Abstract: "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005 ps4009
Contextual Info: NEC PHOTO INTERRUPTERS ELECTRON DEVICE p s 400 i , p s 4003, p s 4005,p s 4007, p s 4009 PHOTO INTERRUPTER NEPOC SERIES DESCRIPTION The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor.

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

DIODE 1N4004G

Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Contextual Info: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

UF4006G-TB

Abstract: UF4007G 4002G 4005G 4006G UF4001G uf4006g
Contextual Info: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Diode IN 5404

Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Contextual Info: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A

uf4007 diode

Abstract: diode UF-4007 STD DIODE UF4007 NI 4001 UF4003 diode UF4007 UF400X RS-296-E UF4001-T3 UF4003
Contextual Info: UF4001 – UF4007 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

diode 1N4001 specifications

Contextual Info: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

high frequency high power transistor 300mhz bjt n

Abstract: RC30 resistor schematic diagram JL 500 1 ECU-V1H104KBW RF2312 RF2312PCBA 1008CS-331XKBC ecuv1h221jcg vd56 DIODE T25-4-B4
Contextual Info: R FI RF2312 MICRO-DEVICES LINEAR GENERAL PURPOSE AMPLIFIER • CATV Distribution Amplifiers • Laser Diode Driver • Gable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AMPLIFIERS Typical Applications Product Description

Contextual Info: RF2312 R F MICRO-DEVICES LINEAR GENERAL PURPOSE AMPLIFIER • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AMPLIFIERS Typical Applications Product Description

Contextual Info: $ 1 N4003A K /D io d e s -4 1N 4003A - > =i < * - k w ? t. -t -/ Silicon Diffused Junction Rectifying Diode Glass Sealed Type) • 1) ¿1^7 2) tw it\D £ 0 /D im e n s io n s (Unit : mm) 5o '¡'•WT&Zo 3) S i it f 4) 7 R S t iT '£ > 5 „ • Features

uf4006g

Contextual Info: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic

Contextual Info: KT1400 Series 4PIN LSOP PHOTODARLINGTON PHOTOCOUPLER cosmo Description series consist of a photodarlington optically coupled to a gallium 4 KT1400 1 The Schematic arsenide infrared-emitting diode in a 4 pin LSOP 3 2 wide body package. Collector-emitter voltage is

AD8017

Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM Schottky diode detector with linearization Broadband 50 Ω input impedance Accurate response from 0.5 GHz to 43.5 GHz with minimal slope variation Input range of −30 dBm to +15 dBm, referred to 50 Ω Excellent temperature stability

Contextual Info: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Contextual Info: UF4001G – UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency

UF4001G

Abstract: UF4007G 4002G 4005G 4006G
Contextual Info: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic

AD8017

Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM Schottky diode detector with linearization Broadband 50 Ω input impedance Accurate response from 0.5 GHz to 43.5 GHz with minimal slope variation Input range of −30 dBm to +15 dBm, referred to 50 Ω Excellent temperature stability

Contextual Info: SDN137 Digital High Speed Optocoupler 10MBd, Logic Output Description Features •      The SDN137 consists of a high efficient AlGaAs Light Emitting Diode and a high speed optical detector. This design provides excellent AC and DC isolation between the

210 optocoupler

Abstract: 4 pin optocoupler
Contextual Info: SDT600 DC Input 60V Photo-Transistor Optocoupler Description Features •        The SDT600 consists of a phototransistor optically coupled to a light emitting diode. Optical coupling between the input IR LED and output phototransistor allows for high

Contextual Info: SDN139 Analog High Speed Optocoupler 100KBd, Photodiode with Darlington Output Description Features •       The SDN139 consists of a highly efficient AlGaAs Light Emitting Diode and an integrated high gain photo detector to provide extremely high current