DIODE 39A Search Results

Contextual Info: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery

Contextual Info: APTC60DSKM70CT1G Dual buck chopper Super Junction MOSFET SiC chopper diode VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies Features   SiC Schottky Diode - Zero reverse recovery

schottky 400v

Abstract: APT0406 APT0502
Contextual Info: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

G60N60

Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2
Contextual Info: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

APT0406

Abstract: APT0502
Contextual Info: APTC60DDAM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual boost chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • •

Contextual Info: APTC60DDAM70CT1G Dual boost chopper Super Junction MOSFET SiC chopper diode VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction Features 

Contextual Info: APTC60DDAM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual boost chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • •

DIODE 4d

Contextual Info: SKiiP 39AHB16V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Chopper ,$0  9 ,$0  . ' /-    

Contextual Info: SKiiP 39ANB16V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; (Z Diode - Inverter, Chopper MiniSKiiP 3 (& M GF TUQV N; .$ .$1X (Z 3-phase bridge rectifier +

Diode 6a8

Abstract: 6A8 RECTIFIER DIODE F 407 Diode
Contextual Info: SKiiP 39AC126V2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$3  : ,$3  1 ' 20    

diode B7

Abstract: diode 4g 39ANB16V1
Contextual Info: SKiiP 39ANB16V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ,$0  9 ,$0  . ' /-    

G60N60

Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2
Contextual Info: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: SKiiP 39AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; '@ Y P S& ([ Diode - Chopper MiniSKiiP 3 (& M GF TUQV N; '@ Y P S& .$ .$1X ([ 3-phase bridge rectifier + brake chopper

Contextual Info: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: SKiiP 39AC065V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter L<DT .< .<1Z L/DT -* R HG S<P 45%7* 2&97'8:*7 *B7?: :76 -* R HG VWJX S< &B [ N M* -] Diode - Inverter MiniSKiiP 3 .Q .Q1Z -* R HG VWJX S< &B [ N M* -] 3-phase bridge inverter SKiiP 39AC065V2

7819

Contextual Info: SKiiP 39AC065V2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter -%5  ; -%5  3 41    # 

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

33A zener diode

Abstract: zener diode 46a
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: PD 9.1469A International ICR Rectifier IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

g4pc50fd

Abstract: g4pc50 g4pc50f g4p-c50 g4pc IRG4PC50FD IRG4PC50F
Contextual Info: International IGR Rectifier PD 9.1469A IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

SCS110AG

Abstract: scs110
Contextual Info: TYPE PRODUCTS TO-220AC 2L PAGE SCS110AG 1.TYPE SCS110AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK

IRG4PC50FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20