Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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MI301
Abstract: No abstract text available
Text: bSMTôET DD1 7 7 3 2 LTT • ANTENNA SWITCH M I303 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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MI303
MI301
MI303
230nH
MI301
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MI402
Abstract: No abstract text available
Text: • bSWöSl ANTENNA SWITCH 0017?3fl QDfi — MI402 PIN DIODE RF POWER SWITCHING DESCRIPTION FEATURES • * Dim ension: mm OUTLINE DRAWING The MI402 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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MI402
MI402
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zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
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BZX84C-BS
OT-23
OT-23
MIL-STD-202E
zener 6c2
sot-23 Marking 8C2
6c2 diode
5B1 zener diode sot-23
Diode SOT-23 marking 27C
5c1 zener diode
SOT23 MARKING 5b1
27BSB
5B1 IR
BZX84C
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MI303
Abstract: 1773M 4B2 diode 7L03 db 411 antenna
Text: bSMTöES 0017732 LTT • ANTENNA SWITCH MI303 PIN DIODE R F POW ER SWITCHING DESCRIPTION The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios. FEA TU RES • Low insertion loss
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MI303
MI303
230nH
144MHz
50MHz
440MHz
80dBc
1773M
4B2 diode
7L03
db 411 antenna
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LTC4098-3.6
Abstract: KE 76 DIODE
Text: 1,5 KE6,8.1,5 KE170CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module - > 6 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and
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KE170CA
KE170CA
LTC4098-3.6
KE 76 DIODE
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M 6 6 5 1 O P /F P LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a semiconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying
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M66510
120mA
b24Tfl2b
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MARKING CODE WMV
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode • *1 1 0 OUTLINE : AX078 D2L40U ft 400V 1,5A CD Feature L ñ , 27 5 Low Noise trr-35ns • trr=35ns Unit I mm Weight .’5Sirn'yp> 15 é l . CD* M ain Use » » n îiliK tW M M arkin « • Switching Regulator m • Fly Wheel
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D2L40U
trr-35ns
ax078
J533-1)
D2L40U
CJ533-1
MARKING CODE WMV
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C-150
Abstract: MASW-005100-1194
Text: MASW-005100-1194 HMIC Silicon PIN Diode Switch RoHs Compliant Rev. V3 FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction +33dBm Input Power DESCRIPTION
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MASW-005100-1194
50MHz
26GHz
20GHz
33dBm
MASW-005100-1194
C-150
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MASW-004100-11930G
Abstract: MASW-004100-11930W
Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
MASW-004100-11930G
MASW-004100-11930W
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Untitled
Abstract: No abstract text available
Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
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MASW-005100-1194
Abstract: No abstract text available
Text: MASW-005100-1194 HMIC SP5T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 38dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-005100-1194
50MHz
26GHz
20GHz
33dBm
MASW-005100-1194
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capacitor tnr 471
Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and
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610mm
capacitor tnr 471
15g390k
TNR 471
15g821k
SIEMENS LIGHTNING ARRESTORS
15G470K
15g470km
ERZC14DK391
ERZ-C14DK390
TNR-15G470KM
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ERZC14DK911
Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and
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18vto
zAC14DK911
tVSAC20DK911
ERZ-C10DK911
ERZ-C14DK911
ERZ-C20DK911
AC10DK102
tVSAC14DK102
fVSAC20DK102
ERZ-C10DK102
ERZC14DK911
15g470km
ERZ-C20DK112
ERZ-C05DK201u
varistor tnr
TNR15G470K
TNR G Series
ERZC07DK471
10DK471
15G470K
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Untitled
Abstract: No abstract text available
Text: FEATURES - 1300/1550 NM Wavelength - High Optical Power - Low Threshold Current - High Operating Temperature - High Speed - Rear Facet Monitor - Uncooled - Small Package - Singlemode Fiber Pigtail LASER WITH MONITOR DIODE CHARACTERISTICS T= 25°C Parameter
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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650nm 5mw laser
Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
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1550nm
650nm 5mw laser
ird300
laser range finder schematics
500mW 808nm infrared laser diode driver circuit
650nm laser diode 200mw
circuit diagram of radar range finder
LD-808-500G
t15f-xyz-wm
LD-808-1000G
LD-650-5A
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MASW-004100-11930W
Abstract: No abstract text available
Text: Monolithic PIN SP4T Diode Switch MASW-004100-1193 Rev. 2 Features • • • • Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction Description
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MASW-004100-1193
50MHz
26GHz
20GHz
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MASW-004100-11930W
MASW-004100-11930W
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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C-150
Abstract: MASW-004100-11930G MASW-004100-11930W
Text: MASW-004100-1193 HMIC Silicon PIN Diode Switch RoHs Compliant Rev. V3 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
C-150
MASW-004100-11930G
MASW-004100-11930W
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Untitled
Abstract: No abstract text available
Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.
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REJ03G1771-0100
PUSF0002ZD-A
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4C3 zener
Abstract: GLZ4.3B zener 4c3
Text: GLZ SERIES 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference
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500mW
MIL-STD-202,
4C3 zener
GLZ4.3B
zener 4c3
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4C3 zener diode
Abstract: 6c2 diode MARKING CODE 3B0 RKZ3.9BKU
Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.
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REJ03G1771-0100
PUSF0002ZD-A
4C3 zener diode
6c2 diode
MARKING CODE 3B0
RKZ3.9BKU
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4C3 zener diode
Abstract: 9c1 zener diode 5c1 zener diode zener 6c2 6b2 zener diode diode zener 33c zener 3a6 zener 4c3 5B1 zener diode zener diode 6c2
Text: Preliminary RKZ-KU Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1771-0100 Rev.1.00 Jul 13, 2009 Features • Small outline yet high-power permitting 500 mW power dissipation. • Halogen free, Environmental friendly Package includes Conformity to RoHS Directive.
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REJ03G1771-0100
PUSF0002ZD-A
4C3 zener diode
9c1 zener diode
5c1 zener diode
zener 6c2
6b2 zener diode
diode zener 33c
zener 3a6
zener 4c3
5B1 zener diode
zener diode 6c2
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