DIODE 2M Search Results

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

014 IR MOSFET Transistor

Abstract: MOSFET sot23-6 dual RCE SOT23-6 20 amp MOSFET transistor schottky diode MLP832 ZXTS1000E6
Contextual Info: Multichip Devices Dual Schottky Diode, Transistor & Schottky Diode Combinations Packaged in both the SOT23-6 and the innovative 3mm x 2mm MLP micro leaded package outline, this range of combination duals comprises ultra low saturation NPN or PNP transistors and a Schottky barrier diode (1 amp in the case of

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Solar Charge Controller

Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Solar Charge Controller

Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

JY diode

Abstract: CDG22 CDG23 CDG24 CDG25 CDG26
Contextual Info: CDG22 .CDG26 SILICON PLANAR BIASING DIODE The biasing diode is a silicon glass diode suitable for use as general purpose biasing diode. max. 1.90 Cathode max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta= 25 °C Symbol Value

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

Contextual Info: US 2A . US 2M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 2A . US 2M

Contextual Info: FR 2A.FR 2M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Fast silicon rectifier diodes FR 2A.FR 2M 

Z6 DIODE

Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
Contextual Info: Diode, Zener Silicon Planar Voltage Regulator Diode Feature: Low voltage general purpose voltage regulator diode. Absolute Maximum Ratings Ta = 25°°C Description Symbol Working Voltage Tolerance Value Unit ±5 % 250 mA Repetitive Peak Forward Current IFRM

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

DD B6U 84 N 16 RR

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

Contextual Info: Nov. 1995 Surface Mountable Single-Mode LD Module QD-8305 Description NEC's new surface-mount, low-cost laser diode module is designed for use in fiber optic communications applications such as ATM, FITL and SONET. The laser diode module consists o f a laser diode and a monitor photo diode. This module can be used with a

H20R120

Abstract: igbt h20r120 h20r H20R12 h20r120 igbt IHW20N120R ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A
Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications