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    DIODE 224 Search Results

    DIODE 224 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 224 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC PDF

    transistor irf 645

    Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
    Text: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4601A IRGR3B60KD2 EIA-481 EIA-541. EIA-481. transistor irf 645 diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGR3B60KD2PbF EIA-481 EIA-541. EIA-481. PDF

    transistor irf 645

    Abstract: AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120
    Text: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4601A IRGR3B60KD2 EIA-481 EIA-541. EIA-481. transistor irf 645 AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 PDF

    AN-994

    Abstract: C-150 EIA-541 IRFR120 of transistor C 4212
    Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGR3B60KD2PbF EIA-481 EIA-541. EIA-481. AN-994 C-150 EIA-541 IRFR120 of transistor C 4212 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


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    4601A IRGR3B60KD2 EIA-481 EIA-541. EIA-481. PDF

    BCS028N06NS

    Abstract: 028N06NS DC1502
    Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a


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    DC1502A LTC4359HDCB 2V/20A LTC4359 dc1502af BCS028N06NS 028N06NS DC1502 PDF

    Hitachi DSA002726

    Abstract: No abstract text available
    Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a


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    HL1553 HL1553 HL1553: Hitachi DSA002726 PDF

    ZENER DIODE t2

    Abstract: philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142


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    M3D119 BZD142 MGU216 613510/01/pp8 ZENER DIODE t2 philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .


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    WT-224DV06 MIL-STD883 23-Dec-09 PDF

    electroabsorption 2.5 Gbps

    Abstract: nrz optical modulator HL1553
    Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5


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    HL1553 HL1553 electroabsorption 2.5 Gbps nrz optical modulator PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    philips datasheet surface mount zener diode

    Abstract: philips data book zener diode ZENER DIODE t2 test SOD87 BZD142W BZD142W-68 M3D121 philips zener diode philips zener diode 47
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BZD142W ZenBlock; zener with integrated blocking diode Product specification 2000 May 01 Philips Semiconductors Product specification ZenBlock; zener with integrated blocking diode BZD142W FEATURES


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    M3D121 BZD142W MAM433 613510/01/pp8 philips datasheet surface mount zener diode philips data book zener diode ZENER DIODE t2 test SOD87 BZD142W BZD142W-68 M3D121 philips zener diode philips zener diode 47 PDF

    BIR-NM23C1

    Abstract: 100C
    Text: BRIGHT LED ELECTRONICS CORP. INFRARED EMITTING DIODE SPECIFICATION MOBICON Ilectrra ic Components COMMODITY : Side look Package Imfrared Emitting Diode DEVICE NUMBER : BIR-NM23C1 APPLICATIONS • Automatic Control System *Mouse PACKAGE DIMENSIONS 4.5 .177 ±0.1


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    BIR-NM23C1 Temperature-25Â 100C PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b£E ]> • b427525 003?=]^ T4Ü BINECE DATA SHEET NEC LASER DIODE MODULE NDL5776P ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5776P is a 1 550 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is


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    b427525 NDL5776P NDL5776P NDL5061 NDL5762P NDLS766P NDL5765P NDL5765P1 ------------------NOL5060 NOL5070 PDF

    1031 sh

    Abstract: diode UF 400
    Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1031 SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten


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    Untitled

    Abstract: No abstract text available
    Text: APT30DL60BCT G 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


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    APT30DL60BCT O-247 PDF

    SH 1031

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1031 SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten


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    34DSH65 SH 1031 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30DL60BCT G 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


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    APT30DL60BCT O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: RClamp0508M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    do000 PDF

    tv circuit diagram

    Abstract: DVI PCB design guidelines MO-187 MSOP-10L 1394 6 pin firewire to USB Connection Diagram 0504M Flat panel tv LG video power supply diagram
    Text: RClamp0504M RailClamp Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Features Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    RClamp0504M inte004 0504M tv circuit diagram DVI PCB design guidelines MO-187 MSOP-10L 1394 6 pin firewire to USB Connection Diagram Flat panel tv LG video power supply diagram PDF

    508M

    Abstract: MO-187 MSOP-10L
    Text: RClamp0508M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    RClamp0508M 0508M 508M MO-187 MSOP-10L PDF

    SMBJ200CA

    Abstract: No abstract text available
    Text: Part: SMBJ200CA Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature


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    SMBJ200CA 10x1000 10x1000Â 10x160Â PDF